机构

• 半导体研究所 [7]
• 物理研究所 [4]
• 化学研究所 [3]
• 金属研究所 [2]
• 上海微系统与信息技术... [1]

采集方式

• OAI收割 [17]

内容类型

• 期刊论文 [17]

发表日期

• 2019 [2]
• 2018 [1]
• 2015 [1]
• 2007 [1]
• 2006 [1]
• 2003 [3]
• 更多

学科主题

• 半导体物理 [6]
• Materials ... [1]
• 半导体材料 [1]

筛选

浏览/检索结果: 共17条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 AsP/InSe Van der Waals Tunneling Heterojunctions with Ultrahigh Reverse Rectification Ratio and High Photosensitivity 期刊论文  OAI收割 ADVANCED FUNCTIONAL MATERIALS, 2019, 卷号: 29, 期号: 12, 页码: 9 作者:  Wu, Feng;  Xia, Hui;  Sun, Haiding;  Zhang, Junwei;  Gong, Fan   |  收藏  |  浏览/下载：29/0  |  提交时间：2021/02/02 backward diodes  photodiodes  rectification  tunneling  van der Waals heterojunctions   AsP/InSe Van der Waals Tunneling Heterojunctions with Ultrahigh Reverse Rectification Ratio and High Photosensitivity 期刊论文  OAI收割 ADVANCED FUNCTIONAL MATERIALS, 2019, 卷号: 29, 期号: 12, 页码: 9 作者:  Wu, Feng;  Xia, Hui;  Sun, Haiding;  Zhang, Junwei;  Gong, Fan   |  收藏  |  浏览/下载：24/0  |  提交时间：2021/02/02 backward diodes  photodiodes  rectification  tunneling  van der Waals heterojunctions   Enhanced electron current in inverted organic light emitting diodes with an n-doped electron transport layer adopting high and low doping levels 期刊论文  OAI收割 MATERIALS RESEARCH EXPRESS, 2018, 卷号: 5, 期号: 1 作者:  Qin, Dashan;  Shi, Zhihua;  Cao, Huan;  Zhao, Wei;  Zhang, Jidong   |  收藏  |  浏览/下载：26/0  |  提交时间：2019/04/09 Organic Light Emitting Diodes  N-doped Electron Transport Layer  Doping Level  Electron Tunneling Injection   High Efficiency Tandem Organic Light Emitting Diode Using an Organic Heterojunction as the Charge Generation Layer: An Investigation into the Charge Generation Model and Device Performance 期刊论文  OAI收割 ACS PHOTONICS, 2015, 卷号: 2, 期号: 2, 页码: 271-279 作者:  Sun, Hengda;  Guo, Qingxun;  Yang, Dezhi;  Chen, Yonghua;  Chen, Jiangshan   |  收藏  |  浏览/下载：28/0  |  提交时间：2019/04/09 Organic Light-emitting Diodes  Charge Generation Layers  Organic Heterojunctions  Charge Tunneling   Carrier conduction in heterojunction of hydrogenated nanocrystalline silicon with crystal silicon 期刊论文  OAI收割 THIN SOLID FILMS, 2007, 卷号: 515, 期号: 7-8, 页码: 3997-4003 Wei, WS; Xu, GY; Wang, TM; Shen, WZ 收藏  |  浏览/下载：12/0  |  提交时间：2012/03/24 RESONANT-TUNNELING DIODES  AMORPHOUS-SILICON  GAP STATES  TRANSPORT  CAPACITANCE  BARRIER  DENSITY   Investigation of charge-carrier injection characteristics in NPB/Alq3 heterojunction devices 期刊论文  OAI收割 CHEMICAL PHYSICS, 2006, 卷号: 325, 期号: 2, 页码: 225-230 作者:  Chen, JS;  Ma, DG   |  收藏  |  浏览/下载：18/0  |  提交时间：2019/04/09 Charge Injection  Organic Light-emitting Diodes  Fowler-nordheim Tunneling  Richardson-schottky Thermionic Emission   A novel single-electron analog-to-digital converter 期刊论文  OAI收割 ACTA PHYSICA SINICA, 2003, 卷号: 52, 期号: 8, 页码: 2041 Zhang, ZY; Wang, TH 收藏  |  浏览/下载：15/0  |  提交时间：2013/09/17 RESONANT-TUNNELING DIODES   Multipeak negative-differential-resistance device by combining SET and MOSFET 期刊论文  OAI收割 ACTA PHYSICA SINICA, 2003, 卷号: 52, 期号: 7, 页码: 1766 Zhang, ZY; Wang, TH 收藏  |  浏览/下载：13/0  |  提交时间：2013/09/18 RESONANT-TUNNELING DIODES  SINGLE-ELECTRON  TRANSISTORS   Study on the reverse characteristics of Ti/6H-SiC Schottky contacts 期刊论文  OAI收割 acta physica sinica, 2003, 卷号: 52, 期号: 1, 页码: 211-216 Shang YC; Liu ZL; Wang SR 收藏  |  浏览/下载：61/0  |  提交时间：2010/08/12 SiC  Schottky contacts  reverse characteristics  tunneling current  ELECTRICAL CHARACTERISTICS  INHOMOGENEITIES  DIODES   Characterization of deep levels in Pt-GaN Schottky diodes deposited on intermediate-temperature buffer layers 期刊论文  OAI收割 ieee transactions on electron devices, 2002, 卷号: 49, 期号: 2, 页码: 314-318 Leung BH; Chan NH; Fong WK; Zhu CF; Ng SW; Lui HF; Tong KY; Surya C; Lu LW; Ge WK 收藏  |  浏览/下载：144/0  |  提交时间：2010/08/12 deep level transient Fourier spectroscopy  (DLTFS)  gallium nitride (GaN)  intermediate-temperature buffer layer (ITBF)  low-frequency noise  RESONANT-TUNNELING DIODES  GENERATION-RECOMBINATION NOISE  RANDOM-TELEGRAPH NOISE  ULTRAVIOLET PHOTODETECTORS  DEVICES