中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
首页
机构
成果
学者
登录
注册
登陆
×
验证码:
换一张
忘记密码?
记住我
×
校外用户登录
CAS IR Grid
机构
新疆理化技术研究所 [13]
近代物理研究所 [3]
地质与地球物理研究所 [2]
国家空间科学中心 [1]
数学与系统科学研究院 [1]
自动化研究所 [1]
更多
采集方式
OAI收割 [22]
内容类型
期刊论文 [21]
会议论文 [1]
发表日期
2023 [1]
2022 [1]
2021 [5]
2020 [1]
2019 [2]
2018 [9]
更多
学科主题
Engineerin... [1]
Nuclear Sc... [1]
筛选
浏览/检索结果:
共22条,第1-10条
帮助
条数/页:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
排序方式:
请选择
题名升序
题名降序
提交时间升序
提交时间降序
作者升序
作者降序
发表日期升序
发表日期降序
Multiwave Structure of Traveling Ionospheric Disturbances Excited by the Tonga Volcanic Eruptions Observed by a Dense GNSS Network in China
期刊论文
OAI收割
SPACE WEATHER-THE INTERNATIONAL JOURNAL OF RESEARCH AND APPLICATIONS, 2023, 卷号: 21, 期号: 2, 页码: 11
作者:
Li, Xiaolin
;
Ding, Feng
;
Yue, Xinan
;
Mao, Tian
;
Xiong, Bo
  |  
收藏
  |  
浏览/下载:10/0
  |  
提交时间:2024/01/02
GNSS
TEC
TID
Short-Period Concentric Traveling Ionospheric Disturbances Excited by the Launch of China's Long March 4B Rocket Detected by 1 Hz GNSS Data
期刊论文
OAI收割
SPACE WEATHER-THE INTERNATIONAL JOURNAL OF RESEARCH AND APPLICATIONS, 2022, 卷号: 20, 期号: 6, 页码: 13
作者:
Li, Xiaolin
;
Ding, Feng
;
Yue, Xinan
;
Li, Jianyong
  |  
收藏
  |  
浏览/下载:42/0
  |  
提交时间:2022/07/19
TID
GNSS
TEC
Radiation Effects and Mechanisms on Switching Characteristics of Silicon Carbide Power MOSFETs
期刊论文
OAI收割
JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2021, 卷号: 16, 期号: 9, 页码: 1423-1429
作者:
Feng, HN (Feng, Haonan) [1] , [2] , [3]
;
Yang, S (Yang, Sheng) [1] , [2] , [3]
;
Liang, XW (Liang, Xiaowen) [1] , [2] , [3]
;
Zhang, D (Zhang, Dan) [1] , [2] , [3]
;
Pu, XJ (Pu, Xiaojuan) [1] , [2] , [3]
  |  
收藏
  |  
浏览/下载:43/0
  |  
提交时间:2022/03/24
SiC Power MOSFETs
Switching Characteristics
Total Ionizing Dose (TID) Effect
Static Characteristic
Parasitic Capacitance
Impact of TID on Within-Wafer Variability of Radiation-Hardened SOI Wafers
期刊论文
OAI收割
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2021, 卷号: 68, 期号: 7, 页码: 1423-1429
作者:
Zheng, QW (Zheng, Qiwen) 1
;
Cui, JW (Cui, Jiangwei) 1
;
Yu, XF (Yu, Xuefeng) 1
;
Li, YD (Li, Yudong) 1
;
Lu, W (Lu, Wu) 1
  |  
收藏
  |  
浏览/下载:42/0
  |  
提交时间:2021/08/06
Radiation-hardened (RH)silicon-on-insulator (SOI)total ionizing dose (TID)within-wafer variability
Role of the oxide trapped charges in charge coupled device ionizing radiation-induced dark signal
期刊论文
OAI收割
RADIATION PHYSICS AND CHEMISTRY, 2021, 卷号: 189, 期号: 12, 页码: 1-5
作者:
Li, YD (Li, Yudong)
;
Liu, BK (Liu, Bingkai)
  |  
收藏
  |  
浏览/下载:49/0
  |  
提交时间:2021/10/14
Radiation effectsTotal ionizing dose (TID)Charge coupled device (CCD)Dark signalOxide trapped charges
Measurement and Evaluation of the Within-Wafer TID Response Variability on BOX Layer of SOI Technology
期刊论文
OAI收割
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2021, 卷号: 68, 期号: 10, 页码: 2516-2523
作者:
Zheng, QW (Zheng, Qiwen) 1Cui, JW (Cui, Jiangwei) 1Yu, XF (Yu, Xuefeng) 1
;
Li, YD (Li, Yudong) 1
;
Lu, W (Lu, Wu) 1
;
He, CF (He, Chengfa) 1
;
Guo, Q (Guo, Qi) 1
  |  
收藏
  |  
浏览/下载:40/0
  |  
提交时间:2021/12/06
Threshold voltage
TestingMOSFET circuits
Transistors
Standards
Logic gates
Fluctuations
Buried oxide (BOX)
silicon-on-insulator (SOI)
total ionizing dose (TID)
TID Response and Radiation-Enhanced Hot-Carrier Degradation in 65-nm nMOSFETs: Concerns on the Layout-Dependent Effects
期刊论文
OAI收割
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2021, 卷号: 68, 期号: 8, 页码: 1565-1570
作者:
Ren, ZX (Ren, Zhexuan)
;
1An, X (An, Xia) 1
;
Li, GS (Li, Gensong) 1
;
Liu, JY (Liu, Jingyi) 1
;
Xun, MZ (Xun, Mingzhu) 2
  |  
收藏
  |  
浏览/下载:44/0
  |  
提交时间:2021/09/22
65 nmhot-carrier injection (HCI)layout-dependent effect (LDE)nMOSstressthreshold voltagetotal ionizing dose (TID)
TID Response of Bulk Si PMOS FinFETs: Bias, Fin Width, and Orientation Dependence
期刊论文
OAI收割
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2020, 卷号: 67, 期号: 7, 页码: 1320-1325
作者:
Ren, ZX (Ren, Zhexuan)[ 1 ]
;
An, X (An, Xia)[ 1 ]
;
Li, GS (Li, Gensong)[ 1 ]
;
Chen, G (Chen, Gong)[ 1 ]
;
Li, M (Li, Ming)[ 1 ]
  |  
收藏
  |  
浏览/下载:55/0
  |  
提交时间:2020/09/09
Bulk Si FinFET
fin width
orientation
PMOS
threshold voltage shift
total ionizing dose (TID)
Total Ionizing Dose Influence on the Single-Event Multiple-Cell Upsets in 65-nm 6-T SRAM
期刊论文
OAI收割
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2019, 卷号: 66, 期号: 6, 页码: 892-898
作者:
Zheng, Qiwen
;
Cui, Jiangwei
;
Lu, Wu
;
Guo, Hongxia
;
Liu, Jie
  |  
收藏
  |  
浏览/下载:88/0
  |  
提交时间:2019/11/10
Single-event multiple-cell upsets (MCUs)
static random access memory
total ionizing dose (TID)
Total Ionizing Dose Responses of Forward Body Bias Ultra-Thin Body and Buried Oxide FD-SOI Transistors
期刊论文
OAI收割
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2019, 卷号: 66, 期号: 4, 页码: 702-709
作者:
Zheng, QW (Zheng, Qiwen)[ 1 ]
;
Cui, JW (Cui, Jiangwei)[ 1 ]
;
Xu, LW (Xu, Liewei)[ 2 ]
;
Ning, BX (Ning, Bingxu)[ 3 ]
;
Zhao, K (Zhao, Kai)[ 3 ]
  |  
收藏
  |  
浏览/下载:116/0
  |  
提交时间:2019/05/14
Back-gate biasing
forward body bias (FBB)
total ionizing dose (TID)
ultrathin body and buried oxide fully depleted silicon-on-insulator (UTBB FD-SOI)