机构

• 新疆理化技术研究所 [6]
• 新疆生态与地理研究所 [1]
• 中国科学院大学 [1]

采集方式

• OAI收割 [7]
• iSwitch采集 [1]

内容类型

• 期刊论文 [8]

发表日期

• 2021 [2]
• 2018 [1]
• 2016 [2]
• 2014 [1]
• 2011 [1]
• 2010 [1]
• 更多

学科主题

• Physics [1]

筛选

浏览/检索结果: 共8条，第1-8条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Experimental investigation on total-ionizing-dose radiation effects on the electrical properties of SOI-LIGBT 期刊论文  OAI收割 SOLID-STATE ELECTRONICS, 2021, 卷号: 175, 期号: 1, 页码: 1-7 作者:  Yang, GG (Yang, Guangan)[ 1 ];  Wu, WR (Wu, Wangran)[ 1 ];  Zhang, XY (Zhang, Xingyao)[ 2 ];  Tang, PY (Tang, Pengyu)[ 1 ];  Yang, J (Yang, Jing)[ 1 ]   |  收藏  |  浏览/下载：42/0  |  提交时间：2021/03/15 SOI-LIGBT  Total-ionizing-dose  Radiation  Degradation   Impact of TID on Within-Wafer Variability of Radiation-Hardened SOI Wafers 期刊论文  OAI收割 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2021, 卷号: 68, 期号: 7, 页码: 1423-1429 作者:  Zheng, QW (Zheng, Qiwen) 1;  Cui, JW (Cui, Jiangwei) 1;  Yu, XF (Yu, Xuefeng) 1;  Li, YD (Li, Yudong) 1;  Lu, W (Lu, Wu) 1   |  收藏  |  浏览/下载：42/0  |  提交时间：2021/08/06 Radiation-hardened (RH)silicon-on-insulator (SOI)total ionizing dose (TID)within-wafer variability   gamma-Ray Radiation Effects on an HfO2-Based Resistive Memory Device 期刊论文  OAI收割 IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2018, 卷号: 17, 期号: 1, 页码: 61-64 作者:  Hu, SG (Hu, Shaogang);  Liu, Y (Liu, Yang);  Chen, TP (Chen, Tupei);  Guo, Q (Guo, Qi);  Li, YD (Li, Yu-Dong)   |  收藏  |  浏览/下载：47/0  |  提交时间：2018/01/31 Gamma-ray  Hafnium Oxide  Radiation  Resistive Switching  Total Ionizing Dose   Anomalous electrical properties induced by hot-electron-injection in 130-nm partially depleted soi nmosfets fabricated on modified wafer 期刊论文  iSwitch采集 Ieee transactions on nuclear science, 2016, 卷号: 63, 期号: 5, 页码: 2731-2737 作者:  Dai, Lihua;  Bi, Dawei;  Ning, Bingxu;  Hu, Zhiyuan;  Song, Lei 收藏  |  浏览/下载：62/0  |  提交时间：2019/05/09 Buried oxide  Interface trap  Silicon ion implantation  Soi nmosfets  Total dose radiation   Total ionizing dose radiation effects in foue-transistor complementary metal oxide semiconductor image sensors 期刊论文  OAI收割 ACTA PHYSICA SINICA, 2016, 卷号: 65, 期号: 2 作者:  Wang, F (Wang Fan);  Li, YD (Li Yu-Dong);  Guo, Q (Guo Qi);  Wang, B (Wang Bo);  Zhang, XY (Zhang Xing-Yao) 收藏  |  浏览/下载：27/0  |  提交时间：2016/12/13 complementary metal oxide semiconductor image sensor  total ionizing dose radiation effect  pinned photodiode  full well chargecapacity   Radiation effect of deep-submicron metal-oxide-semiconductor field-effect transistor and parasitic transistor 期刊论文  OAI收割 ACTA PHYSICA SINICA, 2014, 卷号: 63, 期号: 22 作者:  Wang, X (Wang Xin);  Lu, W (Lu Wu);  Wu, X (Wu Xue);  Ma, WY (Ma Wu-Ying)   |  收藏  |  浏览/下载：17/0  |  提交时间：2018/02/01 Total Dose Radiation  Nmosfet  Parasitic Transistor  Bandgap Voltage Reference   Degradation and dose rate effects of bipolar linear regulator on ionizing radiation 期刊论文  OAI收割 ACTA PHYSICA SINICA, 2011, 卷号: 60, 期号: 9, 页码: - 作者:  Wang Yi-Yuan;  Lu Wu;  Ren Di-Yuan;  Guo Qi;  Yu Xue-Feng 收藏  |  浏览/下载：23/0  |  提交时间：2012/11/29 bipolar linear regulators  total ionizing dose  dose rate effect  radiation damage   Total ionizing dose effects and annealing behavior for domestic VDMOS devices 期刊论文  OAI收割 Journal of Semiconductors, 2010, 卷号: 31, 期号: 4 Gao; Yu; Ren; Liu; Wang; Sun; Cui; Bo1; Xuefeng1; Diyuan1; Gang3; Yiyuan1; Jing1; Jiangwei1; 2; 2; 2; 2; 2; 2; 4; 4; 4 收藏  |  浏览/下载：18/0  |  提交时间：2011/08/19 Drain current - Electric breakdown - Experiments - Field effect transistors - Ionizing radiation - Irradiation - Radiation effects - Threshold voltage - Annealing behavior - Annealing time - Bias conditions - Breakdown voltage - Drain bias voltage - Electrical parameter - N-channel - On-state resistance - Preirradiation - Total dose - Total dose effect - Total ionizing dose effects - VDMOS device - VDMOS devices