机构

• 新疆理化技术研究所 [3]
• 新疆生态与地理研究所 [1]
• 高能物理研究所 [1]

采集方式

• OAI收割 [5]

内容类型

• 期刊论文 [5]

发表日期

• 2022 [1]
• 2020 [1]
• 2016 [1]
• 2014 [1]
• 2010 [1]

学科主题

• Engineerin... [1]

筛选

浏览/检索结果: 共5条，第1-5条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 1/f Noise responses of Ultra-Thin Body and Buried oxide FD-SOI PMOSFETs under total ionizing dose irradiation 期刊论文  OAI收割 RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2022, 卷号: 176, 期号: 11-12, 页码: 1202-1214 作者:  Zhang, RQ (Zhang, Ruiqin) [1] , [2] , [3];  Zheng, QW (Zheng, Qiwen) [1] , [2];  Lu, W (Lu, Wu) [1] , [2];  Cui, JW (Cui, Jiangwei) [1] , [2];  Li, YD (Li, Yudong) [1] , [2]   |  收藏  |  浏览/下载：38/0  |  提交时间：2022/04/07 Total ionizing dose irradiation  UTBB FD-SOI  1  f noise   Study of the influence of gamma irradiation on long-term reliability of SiC MOSFET 期刊论文  OAI收割 RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2020, 卷号: 175, 期号: 5-6, 页码: 559-566 作者:  Liang, XW (Liang, Xiaowen)[ 1,2,3 ];  Cui, JW (Cui, Jiangwei)[ 1,2 ];  Zheng, QW (Zheng, Qiwen)[ 1,2 ];  Zhao, JH (Zhao, Jinghao)[ 1,2,3 ];  Yu, XF (Yu, Xuefeng)[ 1,2 ]   |  收藏  |  浏览/下载：30/0  |  提交时间：2020/12/11 SiC MOSFET  total ionizing dose irradiation  time-dependent dielectric breakdown   Impact of Bias Conditions on Total Ionizing Dose Effects of Co-60 gamma in SiGe HBT 期刊论文  OAI收割 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2016, 卷号: 63, 期号: 2, 页码: 1251-1258 作者:  Zhang, JX (Zhang, Jinxin);  Guo, Q (Guo, Qi);  Guo, HX (Guo, Hongxia);  Lu, W (Lu, Wu);  He, CH (He, Chaohui) 收藏  |  浏览/下载：45/0  |  提交时间：2016/12/12 Bias conditions  Co-60 gamma irradiation  SiGe HBT  total ionizing dose effect   Analysis of TID Failure Modes in SRAM-Based FPGA Under Gamma-Ray and Focused Synchrotron X-Ray Irradiation 期刊论文  OAI收割 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2014, 卷号: 61, 期号: 4, 页码: 1777-1784 作者:  Ding, LL;  Guo, HX;  Chen, W;  Yao, ZB;  Yan, YH 收藏  |  浏览/下载：18/0  |  提交时间：2016/04/08 Failure modes  focused synchrotron x-ray irradiation  SRAM-based FPGA  total ionizing dose effect   Total ionizing dose effects and annealing behavior for domestic VDMOS devices 期刊论文  OAI收割 Journal of Semiconductors, 2010, 卷号: 31, 期号: 4 Gao; Yu; Ren; Liu; Wang; Sun; Cui; Bo1; Xuefeng1; Diyuan1; Gang3; Yiyuan1; Jing1; Jiangwei1; 2; 2; 2; 2; 2; 2; 4; 4; 4 收藏  |  浏览/下载：19/0  |  提交时间：2011/08/19 Drain current - Electric breakdown - Experiments - Field effect transistors - Ionizing radiation - Irradiation - Radiation effects - Threshold voltage - Annealing behavior - Annealing time - Bias conditions - Breakdown voltage - Drain bias voltage - Electrical parameter - N-channel - On-state resistance - Preirradiation - Total dose - Total dose effect - Total ionizing dose effects - VDMOS device - VDMOS devices