中国科学院机构知识库网格系统: 检索

浏览/检索结果: 共5条，第1-5条

帮助

条数/页：排序方式：
	Controlled growth of two-dimensional InAs single crystals via van der Waals epitaxy 期刊论文 OAI收割 NANO RESEARCH, 2022, 页码: 6 作者: Dai, Jiuxiang; Yang, Teng; Jin, Zhitong; Zhong, Yunlei; Hu, Xianyu \| 收藏 \| 浏览/下载：32/0 \| 提交时间：2022/07/14 two-dimensional materials van der Waals epitaxy indium arsenide nonlayered material
	Self-assembled epitaxy of Ga2Se3 on the oxidized GaSe surface and atomic imaging of the Ga2Se3/GaSe heterostructure 期刊论文 OAI收割 APPLIED SURFACE SCIENCE, 2022, 卷号: 586, 页码: 7 作者: Liu, Jie; Li, Jingwei; Gu, Lixin; Wu, Hong; Han, Guang \| 收藏 \| 浏览/下载：45/0 \| 提交时间：2022/07/07 GaSe bulk crystal & nbsp GaSe oxidized surface Ga2Se3/GaSe heterostructure Atomic imaging Van der Waals epitaxy
	Construction of van der Waals substrates for largely mismatched heteroepitaxy systems using first principles 期刊论文 OAI收割 Science China-Physics Mechanics & Astronomy, 2019, 卷号: 62, 期号: 12, 页码: 7 作者: Z.M.Shi; X.J.Sun; Y.P.Jia; X.K.Liu; S.L.Zhang \| 收藏 \| 浏览/下载：46/0 \| 提交时间：2020/08/24 van der Waals epitaxy,2D materials,first principles,light-emitting-diodes,phase epitaxy growth,algan/gan hemts,boron-nitride,gan,graphene,layer,nanosheets,crystals,semiconductor,Physics
	Van der Waals Epitaxial Growth of Atomic Layered HfS2 Crystals for Ultrasensitive Near-Infrared Phototransistors 期刊论文 OAI收割 ADVANCED MATERIALS, 2017, 卷号: 29, 期号: 32 作者: Fu, Lei; Wang, Feng; Wu, Bin; Wu, Nian; Huang, Wei \| 收藏 \| 浏览/下载：28/0 \| 提交时间：2018/06/15 Hafnium Disulfide Crystals Near-infrared Transition Metal Dichalcogenides Ultrasensitive Phototransistors Van Der Waals Epitaxy
	Vertical Single-Crystalline Organic Nanowires on Graphene: Solution-Phase Epitaxy and Optical Microcavities 期刊论文 OAI收割 NANO LETTERS, 2016, 卷号: 16, 期号: 8, 页码: 4754-4762 作者: Zheng, Jian-Yao; Xu, Hongjun; Wang, Jing Jing; Winters, Sinead; Motta, Carlo 收藏 \| 浏览/下载：58/0 \| 提交时间：2016/12/29 Vertical organic nanowire graphene solution van der Waals epitaxy optical microcavity