机构

• 半导体研究所 [7]
• 长春光学精密机械与物... [2]
• 金属研究所 [1]

采集方式

• OAI收割 [7]
• iSwitch采集 [3]

内容类型

• 期刊论文 [8]
• 会议论文 [2]

发表日期

• 2011 [3]
• 2010 [2]
• 2009 [2]
• 2007 [1]
• 2005 [1]
• 2004 [1]
• 更多

学科主题

• 光电子学 [3]
• 半导体材料 [1]

筛选

浏览/检索结果: 共10条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 1.3-mu m in(ga)as quantum-dot vcsels fabricated by dielectric-free approach with surface-relief process 期刊论文  iSwitch采集 Ieee photonics technology letters, 2011, 卷号: 23, 期号: 2, 页码: 91-93 作者:  Xu, D. W.;  Yoon, S. F.;  Ding, Y.;  Tong, C. Z.;  Fan, W. J. 收藏  |  浏览/下载：29/0  |  提交时间：2019/05/12 Dielectric-free approach  Quantum dot (qd)  Surface-relief technique  Vertical-cavity surface-emitting lasers (vcsels)   Graded index profiles and loss-induced single-mode characteristics in vertical-cavity surface-emitting lasers with petal-shape holey structure 期刊论文  OAI收割 chinese physics b, 2011, 卷号: 20, 期号: 2, 页码: article no.24204 作者:  Jiang B 收藏  |  浏览/下载：74/7  |  提交时间：2011/07/06 vertical-cavity surface-emitting lasers  single mode  low divergence angle  graded index profile  OPTICAL INTERCONNECTS  QUANTUM-DOT  WAVE-GUIDE  VCSELS  POWER  FIELD  OPERATION  OXIDATION  DESIGN  FIBERS   1.3-mu m In(Ga)As Quantum-Dot VCSELs Fabricated by Dielectric-Free Approach With Surface-Relief Process 期刊论文  OAI收割 ieee photonics technology letters, 2011, 卷号: 23, 期号: 2, 页码: 91-93 Xu DW; Yoon SF; Ding Y; Tong CZ; Fan WJ; Zhao LJ 收藏  |  浏览/下载：120/2  |  提交时间：2011/07/05 Dielectric-free approach  quantum dot (QD)  surface-relief technique  vertical-cavity surface-emitting lasers (VCSELs)  EMITTING LASERS   Small-signal equivalent-circuit model and characterization of 1.55-mu m buried tunnel junction vertical-cavity surface-emitting lasers 期刊论文  iSwitch采集 Ieee transactions on microwave theory and techniques, 2010, 卷号: 58, 期号: 5, 页码: 1283-1289 作者:  Zhu, Ning Hua;  Xu, Gui Zhi;  Hofmann, Werner;  Chen, Wei;  Boehm, Gerhard 收藏  |  浏览/下载：29/0  |  提交时间：2019/05/12 Equivalent-circuit model  Optical modulation  Scattering parameters  Semiconductor lasers  Vertical-cavity surface-emitting lasers (vcsels)   Small-Signal Equivalent-Circuit Model and Characterization of 1.55-mu m Buried Tunnel Junction Vertical-Cavity Surface-Emitting Lasers 期刊论文  OAI收割 ieee transactions on microwave theory and techniques, 2010, 卷号: 58, 期号: 5, 页码: 1283-1289 Zhu NH (Zhu Ning Hua); Xu GZ (Xu Gui Zhi); Hofmann W (Hofmann Werner); Chen W (Chen Wei); Bohm G (Boehm Gerhard); Liu; Y (Liu Yu); Wang X (Wang Xin); Xie L (Xie Liang); Amann MC (Amann Markus-Christian) 收藏  |  浏览/下载：127/1  |  提交时间：2010/06/04 Equivalent-circuit model  optical modulation  scattering parameters  semiconductor lasers  vertical-cavity surface-emitting lasers (VCSELs)   High-temperature continuous-wave single-mode operation of 1.3 mu m p-doped inas-gaas quantum-dot vcsels 期刊论文  iSwitch采集 Ieee photonics technology letters, 2009, 卷号: 21, 期号: 17, 页码: 1211-1213 作者:  Xu, D. W.;  Yoon, S. F.;  Tong, C. Z.;  Zhao, L. J.;  Ding, Y. 收藏  |  浏览/下载：32/0  |  提交时间：2019/05/12 Quantum dot (qd)  Single-mode  Thermal stability  Threshold current  Vertical-cavity surface-emitting lasers (vcsels)   High-Temperature Continuous-Wave Single-Mode Operation of 1.3 mu m p-Doped InAs-GaAs Quantum-Dot VCSELs 期刊论文  OAI收割 ieee photonics technology letters, 2009, 卷号: 21, 期号: 17, 页码: 1211-1213 Xu DW; Yoon SF; Tong CZ; Zhao LJ; Ding Y; Fan WJ 收藏  |  浏览/下载：123/2  |  提交时间：2010/03/08 Quantum dot (QD)  single-mode  thermal stability  threshold current  vertical-cavity surface-emitting lasers (VCSELs)   High power vertical cavity surface-emitting laser with high reliability (EI CONFERENCE) 会议论文  OAI收割 Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007, Wuhan, China Changling Y.; Guoguang L.; Chunfeng H.; Li Q. 收藏  |  浏览/下载：18/0  |  提交时间：2013/03/25 High-power vertical-cavity surface-emitting lasers with InGaAs/GaAs quantum well active gain region are investigated. By using AlAs oxidation technology  the devices have been fabricated in experiment  and the characteristics of the device are carried out at room temperature. The 300m-diameter VCSELs have the maximum room temperature continuous wave (CW) optical output power of about 1.1W  and the threshold current of the device is about 0.46A. The life test of the device is carried out in constant current mode. The life test of 300-m diameter lasers shows that the average lifetime is about 1800h at 80C. The device degradation mechanism is also discussed in detail.   High-power VCSELs single devices aid 2-D arrays (EI CONFERENCE) 会议论文  OAI收割 ICO20: Lasers and Laser Technologies, August 21, 2005 - August 26, 2005, Changchun, China 作者:  Liu Y.;  Wang L.;  Wang L.;  Wang L.;  Liu Y. 收藏  |  浏览/下载：14/0  |  提交时间：2013/03/25 The high power bottom-emitting vertical-cavity surface-emitting lasers (VCSELs) and laser arrays emitting at 980 nm are reported. Extensive investigations on size scaling behavior of thermal properties of single devices show limits of attainable output characteristics. The maximum continuous wave (CW) output power at room temperature of single devices with aperture size up to 500 m is as high as 1.95 W. The key characteristics such as maximum output power  wavelength and thermal resistance are discussed. The bottom-emitting arrays of 16 elements and 200 m aperture size of individual elements show output power of CW 1.35 W at room temperature. The far-field angle is below 17 for all driving current  which is very favorable for focusing or collmating optics.   Low threshold current 1.3-mu m GaInNAsVCSELs grown by MOVPE 期刊论文  OAI收割 Ieee Photonics Technology Letters, 2004, 卷号: 16, 期号: 3, 页码: 717-719 A. W. Yue; K. Shen; R. F. Wang; J. Shi 收藏  |  浏览/下载：10/0  |  提交时间：2012/04/14 GaInNAs  low threshold current  vertical-cavity surface-emitting lasers  (VCSELs)  continuous-wave operation  vertical-cavity lasers  diodes