中国科学院机构知识库网格系统: 检索

浏览/检索结果: 共9条，第1-9条

帮助

条数/页：排序方式：
	Polarity-manipulation based on nanoscale structural transformation on strained 2D MgO 期刊论文 OAI收割 JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2014, 卷号: 47, 期号: 10 Liu, ZL; He, X; Mei, ZX; Liang, HL; Gu, L; Duan, XF; Du, XL 收藏 \| 浏览/下载：36/0 \| 提交时间：2015/04/14 MgZnO ZnO polarity UV-detector structural transformation
	Enhancement-mode ZnO/Mg0.5Zn0.5O HFET on Si 期刊论文 OAI收割 JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2014, 卷号: 47, 期号: 25 Ye, DQ; Mei, ZX; Liang, HL; Li, JQ; Hou, YN; Gu, CZ; Azarov, A; Kuznetsov, A; Hong, WC; Lu, YC; Du, XL 收藏 \| 浏览/下载：46/0 \| 提交时间：2015/04/14 enhancement ZnO/MgZnO HFET bottom-gate
	键合方法研制InAsP/InGaAsP量子阱1.3μm垂直腔面发射激光器期刊论文 OAI收割半导体学报, 2008, 期号: 11 劳燕锋; 曹春芳; 吴惠桢; 曹萌; 刘成; 谢正生; 龚谦收藏 \| 浏览/下载：18/0 \| 提交时间：2012/01/06 六方ZnO晶体薄膜立方MgZnO晶体薄膜紫外光致荧光谱(UVPL) X射线光电子能谱(XPS)
	Effect of interface on luminescence properties in ZnO/MgZnO heterostructures (EI CONFERENCE) 会议论文 OAI收割 Wei Z. P.; Lu Y. M.; Shen D. Z.; Wu C. X.; Zhang Z. Z.; Zhao D. X.; Zhang J. Y.; Fan X. W. 收藏 \| 浏览/下载：31/0 \| 提交时间：2013/03/25 A set of ZnO/MgZnO heterostructures with well widths Lw varying from 2 to 20 nm has been grown by plasma-assisted molecular-beam epitaxy (P-MBE). We present a room-temperature (RT) study of the well-width-dependent photoluminescence (PL) spectra and carrier lifetimes in ZnO/MgZnO heterostructures. Bi-exponential process is seen at RT time-decay curves of the luminescence from the well layers. The fast process is from the recombination of the free exciton while the slow process is attributing to the recombination of the localized exciton in the interface of ZnO and MgZnO. It is also confirmed from the PL peak shift of time-resolved PL spectra. With decreasing the well thickness the fast process gradually increases and dominantly contributes to the PL spectrum due to the interface improvement. 2006 Elsevier B.V. All rights reserved.
	Temperature dependence of carrier transfer and exciton localization in ZnO/MgZnO heterostructure (EI CONFERENCE) 会议论文 OAI收割作者: Zhang J.; Zhang J.; Zhang J.; Li B.; Li B. 收藏 \| 浏览/下载：22/0 \| 提交时间：2013/03/25 MgZnO/ZnO heterostructure was fabricated on sapphire substrate by plasma assistant molecular beam epitaxy. The micro-photoluminescence spectra of sample are reported which shows that different emission peaks would appear when the laser beam focuses different deepness in the film. A carrier tunneling process from the MgZnO capping layer to ZnO layer was observed by the measured temperature dependence of photoluminescence spectra. This induces the emission intensity of the ZnO grew monotonically from 81 to 103 K. 2006 Elsevier B.V. All rights reserved.
	Preparation and characteristics of the wide gap semiconductor Mg0.18Zn0.82O thin film by L-MBE 期刊论文 OAI收割 microelectronics journal, 2005, 卷号: 36, 期号: 2, 页码: 125-128 作者: He, YN; Zhang, JW; Yang, XD; Xu, QA; Liu, XH 收藏 \| 浏览/下载：25/0 \| 提交时间：2015/08/17 MgZnO alloy thin film ZnO thin film L-MBE ceramic target
	Characterization of ZnO/Mg0.12Zn0.88O heterostructure grown by plasma-assisted molecular beam epitaxy (EI CONFERENCE) 会议论文 OAI收割 13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004, 13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004 Lu Y. M.; Wu C. X.; Wei Z. P.; Zhang Z. Z.; Zhao D. X.; Zhang J. Y.; Liu Y. C.; Shen D. Z.; Fan X. W. 收藏 \| 浏览/下载：30/0 \| 提交时间：2013/03/25 In this paper Mg0.12Zn0.88O/ZnO heterostructures were fabricated on c-plane sapphire (Al2O3) substrates by plasma-assisted molecular beam epitaxy (P-MBE). The quality of the Mg 0.12Zn0.88O alloy thin film was characterized by X-ray diffraction (XRD) and reflection high-energy electron diffraction (RHEED). Optical properties of the Mg0.12Zn0.88O/ZnO heterostructure were studied by absorption and photoluminescence (PL) spectra. At room temperature (RT) Mg0.12Zn0.88O/ZnO heterostructures show two absorption edges originating from ZnO and Mg 0.12Zn0.88O layers respectively. In PL spectra two ultraviolet emission bands related to the ZnO layer and the Mg 0.12Zn0.88O layer were observed. The emission band from Mg0.12Zn0.88O layer dominates at moderately lower temperature and the luminescence of ZnO becomes gradually important with increasing temperature. This is suggested to exist as a potential barrier in the interface and to restrict the relaxation of the carriers from the Mg 0.12Zn0.88O layer to ZnO layer. As the thickness of ZnO layer decreases the emission from the Mg0.12Zn0.88O layer becomes weaker and weaker. When the ZnO thickness is up to 2 nm only the luminescence of the ZnO layer is observed at RT. The quenching of the emission corresponding to the MgZnO layer indicates the existence of a strong injection process in the samples with thinner ZnO layer. 2005 Elsevier B.V. All rights reserved.
	Mg_xZn_(1-x)O单晶薄膜和MgZnO/ZnO异质结构的光学性质期刊论文 OAI收割半导体学报, 2004, 期号: 10, 页码: 1258-1263 作者: 李炳辉; 申德振; 张振中收藏 \| 浏览/下载：32/0 \| 提交时间：2013/03/11 等离子体辅助分子束外延 MgxZn1-xO合金 MgZnO/ZnO异质结构光致发光谱反射式高能电子衍射
	MgZnO/ZnO异质结构的发光性质研究期刊论文 OAI收割人工晶体学报, 2003, 期号: 06, 页码: 550-554 作者: 赵东旭; 申德振; 李炳辉收藏 \| 浏览/下载：31/0 \| 提交时间：2013/03/11 ZnO/MgZnO异质结构 P-MBE 光致发光谱