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	Structure and magnetic properties of (Al, Co) Co-doped ZnO thin films (EI CONFERENCE) 会议论文 OAI收割 2012 International Conference on Materials Science and Nanotechnology, ICMSN 2012, November 16, 2012 - November 18, 2012, Guangzhou, China Cao P.; Bai Y. 收藏 \| 浏览/下载：37/0 \| 提交时间：2013/03/25 In this study Zn0.99Co0.01Al0.015O thin film has been prepared by sol-gel method. The structural and magnetic properties of the sample were investigated. X-ray diffraction spectroscopy analyses indicate that the Co and Al codoping can not disturb the structure of ZnO. No additional peaks are observed in the Zn0.99Co0.01Al xO and Al3+ and Co2+ substitute for Zn 2+ without changing the wurtzite structure. The resistance measurements confirm that Al ions increase the free carriers concentration. Based on the above experiments we think the ferromagnetic behavior of the sample could not originate from Co nanoclusters. The presence of free carriers and localized d spins is a prerequisite for the appearance of ferromagnetism. As the result the carriers generated by Al doping is considered a main factor to induce the ferromagnetic phenomenon. (2013) Trans Tech Publications Switzerland.
	Aluminum-Doped Zinc Oxide as Transparent Electrode Materials 会议论文 OAI收割 SEP 25-28, 2010 作者: Zhao, Junhua; Wang, Weiyan; Cui, Ping; Zhang, YL; Song, Weijie \| 收藏 \| 浏览/下载：21/0 \| 提交时间：2018/01/12 Al-doped Zno Sputtering Target Thin Film Electrical Optical
	Investigation of growth mode in ZnO thin films prepared at different temperature by plasma-molecular beam epitaxy (EI CONFERENCE) 会议论文 OAI收割 13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004, 13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004 Liang H. W.; Lu Y. M.; Shen D. Z.; Yan J. F.; Li B. H.; Zhang J. Y.; Liu Y. C.; Fan X. W. 收藏 \| 浏览/下载：47/0 \| 提交时间：2013/03/25 High-quality ZnO thin films on c-plane sapphire (Al2O 3) substrates were prepared by plasma-molecular beam epitaxy (P-MBE). The influence of growth temperature on growth mode of ZnO was investigated. Real-time monitored by reflection high-energy electron diffraction (RHEED) images show that below 500 C ZnO thin film was grown by three-dimension (3D) growth mode. While the two-dimension (2D) growth mode was obtained above growth temperature of 650 C. Atomic force microscopy (AFM) images present that the surface morphology of ZnO thin film with 2D growth is improved and X-ray rocking curves (XRC) indicate that the full width at half maximum (FWHM) of the ZnO (0 0 2) peak becomes narrow. From the photoluminescence (PL) spectra ultraviolet (UV) emission peak exhibits obvious blue-shift for the samples grown at lower temperature which is attributed to the effect of the quantum confinement arisen from small crystal grain sizes. The minimum carrier concentration of N=7.661016 cm-3 was obtained in the ZnO thin films with the 2D grown which is closed to that of bulk ZnO. 2005 Elsevier B.V. All rights reserved.
	Characterization of ZnO/Mg0.12Zn0.88O heterostructure grown by plasma-assisted molecular beam epitaxy (EI CONFERENCE) 会议论文 OAI收割 13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004, 13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004 Lu Y. M.; Wu C. X.; Wei Z. P.; Zhang Z. Z.; Zhao D. X.; Zhang J. Y.; Liu Y. C.; Shen D. Z.; Fan X. W. 收藏 \| 浏览/下载：32/0 \| 提交时间：2013/03/25 In this paper Mg0.12Zn0.88O/ZnO heterostructures were fabricated on c-plane sapphire (Al2O3) substrates by plasma-assisted molecular beam epitaxy (P-MBE). The quality of the Mg 0.12Zn0.88O alloy thin film was characterized by X-ray diffraction (XRD) and reflection high-energy electron diffraction (RHEED). Optical properties of the Mg0.12Zn0.88O/ZnO heterostructure were studied by absorption and photoluminescence (PL) spectra. At room temperature (RT) Mg0.12Zn0.88O/ZnO heterostructures show two absorption edges originating from ZnO and Mg 0.12Zn0.88O layers respectively. In PL spectra two ultraviolet emission bands related to the ZnO layer and the Mg 0.12Zn0.88O layer were observed. The emission band from Mg0.12Zn0.88O layer dominates at moderately lower temperature and the luminescence of ZnO becomes gradually important with increasing temperature. This is suggested to exist as a potential barrier in the interface and to restrict the relaxation of the carriers from the Mg 0.12Zn0.88O layer to ZnO layer. As the thickness of ZnO layer decreases the emission from the Mg0.12Zn0.88O layer becomes weaker and weaker. When the ZnO thickness is up to 2 nm only the luminescence of the ZnO layer is observed at RT. The quenching of the emission corresponding to the MgZnO layer indicates the existence of a strong injection process in the samples with thinner ZnO layer. 2005 Elsevier B.V. All rights reserved.
	Properties of transparent conducting Zno : Al (ZAO) oxide thin film and its application for organic light-emitting diodes (OLEDs) 期刊论文 OAI收割 ACTA METALLURGICA SINICA, 2003, 卷号: 39, 期号: 3, 页码: 332-336 作者: Cao, HT; Pei, ZL; Sun, C; Huang, RF; Wen, LS \| 收藏 \| 浏览/下载：17/0 \| 提交时间：2021/02/02 ZnO : Al film electrical and optical property electroluminescent organic light emitting diode (OLED)
	Properties of transparent conducting Zno : Al (ZAO) oxide thin film and its application for organic light-emitting diodes (OLEDs) 期刊论文 OAI收割 ACTA METALLURGICA SINICA, 2003, 卷号: 39, 期号: 3, 页码: 332-336 作者: Cao, HT; Pei, ZL; Sun, C; Huang, RF; Wen, LS \| 收藏 \| 浏览/下载：29/0 \| 提交时间：2021/02/02 ZnO : Al film electrical and optical property electroluminescent organic light emitting diode (OLED)
	Study of the diffusion behaviour of MoO3 and ZnO on oxide thin films by SR-TXRF 期刊论文 OAI收割 SURFACE AND INTERFACE ANALYSIS, 2001, 卷号: 32, 期号: 1, 页码: #REF! 作者: Xu, WM; Xu, JQ; Wu, NZ; Yan, JF; Zhu, YF 收藏 \| 浏览/下载：39/0 \| 提交时间：2016/04/13 MoO3 ZnO Al2O3 TiO2 SiO2 thin film SR-TXRF