中国科学院机构知识库网格系统: 检索

浏览/检索结果: 共9条，第1-9条

帮助

条数/页：排序方式：
	Assessing cognitive biases induced by acute formalin or hotplate treatment: an animal study using affective bias test 期刊论文 OAI收割 FRONTIERS IN BEHAVIORAL NEUROSCIENCE, 2024, 卷号: 18, 页码: 8 作者: Zhang, Yu-Han; Lin, Jie-Xuan; Wang, Ning; Wang, Jin-Yan; Luo, Fei \| 收藏 \| 浏览/下载：26/0 \| 提交时间：2024/03/04 pain cognitive bias affective bias test hotplate formalin
	Application of Cognitive Bias Testing in neuropsychiatric disorders: A Mini-Review based on animal studies 期刊论文 OAI收割 Frontiers in behavioral neuroscience, 2022, 卷号: 16, 页码: 16:924319 作者: Yu-Han Zhang; Ning Wang; Xiao-Xiao Lin; Jin-Yan Wang; Fei Luo \| 收藏 \| 浏览/下载：39/0 \| 提交时间：2022/08/01 affective state animal research application cognitive bias test interpretation bias memory bias.
	Does Approach-Avoidance Behavior in Response to Ambiguous Cues Reflect Depressive Interpretation Bias? Related but Distinct 期刊论文 OAI收割 COGNITIVE THERAPY AND RESEARCH, 2020, 卷号: 44, 页码: 1091–1105 作者: Lin, Xiao-Xiao; Si, Shang-Wen; Gao, Rui-Rui; Sun, Ya-Bin \| 收藏 \| 浏览/下载：30/0 \| 提交时间：2020/08/24 Interpretation bias Depression Ambiguity Judgement bias test Approach-avoidance
	RESEARCH AND ANALYSIS ON STABILITY OF BOLT REINFORCED TUNNEL IN ANISOTROPIC LAYERED ROCK MASS WITH LOW INCLINATION ANGLE STRATIFICATION 会议论文 OAI收割 Huazhong Univ Sci & Technol, NOV 17-19, 2012 作者: Li, Dan; Bai, Shiwei; Chen, Hao; Xia, Binwei \| 收藏 \| 浏览/下载：24/0 \| 提交时间：2018/06/05 Physical model test large scale real triaxial physical model testing machine bias pressure elasto-brittle simulated material layered rock mass overload coefficient
	Microstructure and mechanical properties of CrN coating deposited by arc ion plating on Ti6Al4V substrate 期刊论文 OAI收割 Surface & Coatings Technology, 2011, 卷号: 205, 期号: 19, 页码: 4690-4696 Z. K. Chang; X. S. Wan; Z. L. Pei; J. Gong; C. Sun 收藏 \| 浏览/下载：22/0 \| 提交时间：2012/04/13 Knoop hardness test Interfaces Wear Arc ion plating CrN coatings Ti6Al4V alloy nitride thin-films ti-6al-4v alloy hard coatings wear behavior tribological properties residual-stress sliding contact bias voltage n coatings surface
	Guilty by implicit racial bias: the guilty/not guilty Impicit Association Test 期刊论文 OAI收割 Ohio State Journal of Criminal Law, 2010, 卷号: 8, 页码: 187-208 作者: Levinson J.D.; Cai H.; Young D.; Cai HJ(蔡华俭); Cai HJ(蔡华俭) \| 收藏 \| 浏览/下载：19/0 \| 提交时间：2011/12/02 implicit racial bias racial disparities implicit association test implicit social cognition racial justice
	The effect of applied substrate negative bias voltage on the structure and properties of Al-containing a-C:H thin films 期刊论文 OAI收割 Surface and Coatings Technology, 2008, 卷号: 202, 页码: 2684-2689 作者: Wang P(王鹏); Zhang JY(张俊彦); Wang LP(王立平); Zhang GA(张广安) 收藏 \| 浏览/下载：58/0 \| 提交时间：2013/03/28 Al-containing hydrogenated amorphous carbon Magnetron sputtering Applied substrate pulse bias Hardness Wear test
	The effect of N/Si ratio on the a-SiiH/SiNx interface of a-SirH/SiNx TFT (EI CONFERENCE) 会议论文 OAI收割 Asia Display 2007, AD'07, March 12, 2007 - March 16, 2007, Shanghai, China Liu J. e.; Gao W.; Liao Y.; Jing H.; Fu G. 收藏 \| 浏览/下载：26/0 \| 提交时间：2013/03/25 The threshold voltage of a-Si: H/SiNx TFT will shift under long time gate bias stress it is mostly leaded by charge trapping in gate insulator and defect creation in semiconductor. And it is hard to be applied in AMOLED for TFT because of its threshold voltage shift. In allusion to the phenomenon of charge trapping a series of SiNx insulating films in different N/Si(0. 87 -1.68) ratio were deposited by PECVD in this paper controlling different flow ratio of source gas SiH4 and NH3 and a great deal of tests (ellipsometer infrared absorption (FTIR) and Electron Dispersion Spectrum (EDS) test ) were done on these samples. Based on these SiNx insulators three different capacitance samples in MIS structure were done degraded experiments and C-V tests on these samples were done. The C-V curve shift of capacitance which contained SiNx with slightly N-rich(N/Si is bigger slightly than 1. 33) was not evident before and after degradation this result indicated that the defect density of this type SiN x was smaller and could restrain charge chapping in the interface of a-Si:H/SiNx effectively. So that as gate insulator of TFT SiN x with slightly N-rich could decrease the threshold voltage shift of TFT and enhance its stability effectively.
	on statistical properties of s-boxes in block ciphers 期刊论文 OAI收割 CHINESE JOURNAL OF ELECTRONICS, 2005, 卷号: 14, 期号: 4, 页码: 584-587 Hua C; Wu CK; Feng DG \| 收藏 \| 浏览/下载：21/0 \| 提交时间：2011/07/28 block cipher S-box bias test