机构

• 半导体研究所 [7]
• 新疆天文台 [1]
• 近代物理研究所 [1]

采集方式

• OAI收割 [8]
• iSwitch采集 [1]

内容类型

• 期刊论文 [7]
• 会议论文 [2]

发表日期

• 2023 [1]
• 2011 [1]
• 2010 [1]
• 2006 [1]
• 2003 [2]
• 2001 [1]
• 更多

学科主题

• 半导体材料 [4]
• 半导体物理 [2]

筛选

浏览/检索结果: 共9条，第1-9条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Deep Learning Aided Multi-Level Transmit Power Recognition in Cognitive Radio Networks 期刊论文  OAI收割 IEEE TRANSACTIONS ON COGNITIVE COMMUNICATIONS AND NETWORKING, 2023, 卷号: 9, 期号: 2, 页码: 332-344 作者:  Tan, Zhenyu;  Wang, Danyang;  Liu, Qi;  Li, Zan;  Zhang, Ning   |  收藏  |   Influence of electric field on persistent photoconductivity in unintentionally doped n-type GaN 期刊论文  OAI收割 applied physics letters, 2011, 卷号: 98, 期号: 10, 页码: article no.102104 作者:  Deng QW 收藏  |   Variation of Optical Quenching of Photoconductivity with Resistivity in Unintentional Doped GaN 期刊论文  OAI收割 chinese physics letters, 2010, 卷号: 27, 期号: 5, 页码: art. no. 057104 Hou QF (Hou Qi-Feng); Wang XL (Wang Xiao-Liang); Xiao; HL (Xiao Hong-Ling); Wang CM (Wang Cui-Mei); Yang CB (Yang Cui-Bai); Li JM (Li Jin-Min) 收藏  |   Multinucleon transfer reactions to study single-particle evolution in Se isotopes 会议论文  OAI收割 作者:  Regan, PH;  Jones, GA;  Podolyak, Z;  Yoshinaga, N;  Higashiyama, K   |  收藏  |   Low-frequency noise properties of gan schottky barriers deposited on intermediate temperature buffer layers 期刊论文  iSwitch采集 Materials science in semiconductor processing, 2003, 卷号: 6, 期号: 5-6, 页码: 523-525 作者:  Leung, BH;  Fong, WK;  Surya, C;  Lu, LW;  Ge, WK 收藏  |   Low-frequency noise properties of GaN Schottky barriers deposited on intermediate temperature buffer layers 会议论文  OAI收割 1st international symposium on point defect and stoichiometry, sendai, japan, mar 20-22, 2003 Leung BH; Fong WK; Surya C; Lu LW; Ge WK 收藏  |   Competition between band gap and yellow luminescence in undoped GaN grown by MOVPE on sapphire substrate 期刊论文  OAI收割 journal of crystal growth, 2001, 卷号: 222, 期号: 1-2, 页码: 96-103 Xu HZ; Bell A; Wang ZG; Okada Y; Kawabe M; Harrison I; Foxon CT 收藏  |   Effect of thermal annealing on hole trap levels in Mg-doped GaN grown by metalorganic vapor phase epitaxy 期刊论文  OAI收割 journal of vacuum science & technology a, 2000, 卷号: 18, 期号: 1, 页码: 261-267 Zhu QS; Nagai H; Kawaguchi Y; Hiramatsu K; Sawaki N 收藏  |   Hole trap levels in Mg-doped GaN grown by metalorganic vapor phase epitaxy 期刊论文  OAI收割 applied physics letters, 1998, 卷号: 73, 期号: 14, 页码: 2024-2026 Nagai H; Zhu QS; Kawaguchi Y; Hiramatsu K; Sawaki N 收藏  |