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	Effects of Laser Scanning Speed on Microstructure and Properties of Ti- Ni Shape Memory Alloy 期刊论文 OAI收割 RARE METAL MATERIALS AND ENGINEERING, 2023, 卷号: 52, 期号: 4, 页码: 1455-1463 作者: Jiang, Muchi; Ren, Dechun; Zhao, Xiaoyu; Cai, Yusheng; Ji, Haibin \| 收藏 \| 浏览/下载：13/0 \| 提交时间：2024/01/07 Ti-Ni shape memory alloy additive manufacturing laser scanning speed defect type mechanical property
	Influence of a deep-level-defect band formed in a heavily Mg-doped GaN contact layer on the Ni/Au contact to p-GaN 期刊论文 OAI收割 CHINESE PHYSICS B, 2015, 卷号: 24, 期号: 9, 页码: 5 作者: Li,XJ; Zhao, DG; Jiang, DS; Chen, P; Zhu, JJ 收藏 \| 浏览/下载：50/0 \| 提交时间：2015/12/31 ohmic contact p-type GaN transportation mechanism deep-level-defect band
	DEFECT PHYSICS AND INTRINSIC p-TYPE CONDUCTIVITY IN TOPOLOGICAL INSULATOR AuTlS2 期刊论文 OAI收割 MODERN PHYSICS LETTERS B, 2014, 卷号: 28, 期号: 2 Zhang, JM; Feng, WX; Yang, P; Shi, LJ; Zhang, Y 收藏 \| 浏览/下载：27/0 \| 提交时间：2015/04/14 AuTlS2 defect physics p-type conductivity
	Pressure of stable He-vacancy complex in bcc iron: Molecular dynamics simulations 期刊论文 OAI收割 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2009, 卷号: 267, 页码: 3278-3281 作者: Guo, S. H.; Zhu, B. E.; Liu, W. C.; Pan, Z. Y.; Wang, Y. X. \| 收藏 \| 浏览/下载：17/0 \| 提交时间：2018/05/31 Molecular dynamic simulation Interstitial-type defect Pressure of He-V complex
	The effect of N/Si ratio on the a-SiiH/SiNx interface of a-SirH/SiNx TFT (EI CONFERENCE) 会议论文 OAI收割 Asia Display 2007, AD'07, March 12, 2007 - March 16, 2007, Shanghai, China Liu J. e.; Gao W.; Liao Y.; Jing H.; Fu G. 收藏 \| 浏览/下载：23/0 \| 提交时间：2013/03/25 The threshold voltage of a-Si: H/SiNx TFT will shift under long time gate bias stress it is mostly leaded by charge trapping in gate insulator and defect creation in semiconductor. And it is hard to be applied in AMOLED for TFT because of its threshold voltage shift. In allusion to the phenomenon of charge trapping a series of SiNx insulating films in different N/Si(0. 87 -1.68) ratio were deposited by PECVD in this paper controlling different flow ratio of source gas SiH4 and NH3 and a great deal of tests (ellipsometer infrared absorption (FTIR) and Electron Dispersion Spectrum (EDS) test ) were done on these samples. Based on these SiNx insulators three different capacitance samples in MIS structure were done degraded experiments and C-V tests on these samples were done. The C-V curve shift of capacitance which contained SiNx with slightly N-rich(N/Si is bigger slightly than 1. 33) was not evident before and after degradation this result indicated that the defect density of this type SiN x was smaller and could restrain charge chapping in the interface of a-Si:H/SiNx effectively. So that as gate insulator of TFT SiN x with slightly N-rich could decrease the threshold voltage shift of TFT and enhance its stability effectively.
	A high-quality SOI structure fabricated by low-temperature technology with B+/H+ co-implantation and plasma bonding 期刊论文 OAI收割 SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2006, 卷号: 21, 期号: 7, 页码: 959-963 Ma, XB; Liu, WL; Chen, C; Zhan, D; Song, ZT; Feng, SL 收藏 \| 浏览/下载：16/0 \| 提交时间：2012/03/24 N-TYPE SILICON BORON DEFECT
	Photoluminescence and optical quenching of photoconductivity studies on undoped GaN grown by molecular beam epitaxy 期刊论文 OAI收割 journal of crystal growth, 2000, 卷号: 217, 期号: 3, 页码: 228-232 Xu HZ; Wang ZG; Harrison I; Bell A; Ansell BJ; Winser AJ; Cheng TS; Foxon CT; Kawabe M 收藏 \| 浏览/下载：54/0 \| 提交时间：2010/08/12 GaN photoluminescence optical quenching of photoconductivity native defect level molecular beam epitaxy N-TYPE GAN DEEP-LEVEL DEFECTS YELLOW LUMINESCENCE MAGNETIC-RESONANCE THIN-FILMS