中国科学院机构知识库网格系统: 检索

Structural, magnetic, dielectric and high frequency response of synthesized rare earth doped bismuth nano garnets (BIG) 期刊论文 OAI收割
RESULTS IN PHYSICS, 2018, 卷号: 10, 页码: 784-793
作者: Akhtar, Majid Niaz; Hussain, T.; Khan, Muhammad Azhar; Ahmad, Mukhtar

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收藏 | 浏览/下载：49/0 | 提交时间：2019/12/11

Bismuth nanogarnets Rare earth substitution X-ray diffraction High frequency measurements M-H loops

Mythen detector for X-ray diffraction at the Beijing synchrotron radiation facility 期刊论文 OAI收割
INSTRUMENTATION SCIENCE AND TECHNOLOGY, 2015, 卷号: 44, 期号: 1, 页码: 1-11
作者: Du R(杜蓉); Cai Q(蔡泉); Chen ZJ(陈中军); Gong Y(宫宇); Wu ZH(吴忠华)

收藏 | 浏览/下载：29/0 | 提交时间：2016/04/18

Basic parameters Data treatment Fast response Flat field correction Polycrystalline Synchrotron radiation facility Time-resolved X-ray diffraction measurements

Modified method for diffraction aberration of one-dimensional wire chamber 期刊论文 OAI收割
ACTA PHYSICA SINICA, 2015, 卷号: 64, 期号: 8, 页码: 82901
作者: Wen ZW(温志文); Qi HR(祁辉荣); Dai HL(代洪亮); Zhang YL(张余炼); Wei K(魏堃)

收藏 | 浏览/下载：33/0 | 提交时间：2016/04/18

gas detector diffraction measurements synchrotron radiation correction method

Epitaxial growth of Ge1-xSnx films with x up to 0.14 grown on Ge (00l) at low temperature 期刊论文 OAI收割
CHINESE PHYSICS B, 2014, 卷号: 23, 期号: 8, 页码: 88112
作者: Tao, P; Huang, L; Cheng, HH; Wang, HH; Wu, XS;王焕华

收藏 | 浏览/下载：30/0 | 提交时间：2016/04/08

GeSn films high resolution X-ray diffraction fully-strained Raman measurements

Structure and magnetic properties of (Al, Co) Co-doped ZnO thin films (EI CONFERENCE) 会议论文 OAI收割
2012 International Conference on Materials Science and Nanotechnology, ICMSN 2012, November 16, 2012 - November 18, 2012, Guangzhou, China
Cao P.; Bai Y.

收藏 | 浏览/下载：30/0 | 提交时间：2013/03/25

In this study Zn0.99Co0.01Al0.015O thin film has been prepared by sol-gel method. The structural and magnetic properties of the sample were investigated. X-ray diffraction spectroscopy analyses indicate that the Co and Al codoping can not disturb the structure of ZnO. No additional peaks are observed in the Zn0.99Co0.01Al xO and Al3+ and Co2+ substitute for Zn 2+ without changing the wurtzite structure. The resistance measurements confirm that Al ions increase the free carriers concentration. Based on the above experiments we think the ferromagnetic behavior of the sample could not originate from Co nanoclusters. The presence of free carriers and localized d spins is a prerequisite for the appearance of ferromagnetism. As the result the carriers generated by Al doping is considered a main factor to induce the ferromagnetic phenomenon. (2013) Trans Tech Publications Switzerland.

Synthesis, characterization, and controlled release anticorrosion behavior of benzoate intercalated Zn-Al layered double hydroxides 期刊论文 OAI收割
MATERIALS RESEARCH BULLETIN, 2011, 卷号: 46, 期号: 11, 页码: 1963-1968
作者: Wang, Yi; Zhang, Dun; Zhang, D (reprint author), Chinese Acad Sci, Shandong Prov Key Lab Corros Sci, Inst Oceanol, Qingdao 266071, Peoples R China

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Layered Compounds Intercalation Reactions Electrochemical Measurements X-ray Diffraction

Growth and characterization of Bi2Se3 thin films by pulsed laser deposition using alloy target 期刊论文 OAI收割
THIN SOLID FILMS, 2011, 卷号: 519, 期号: 22, 页码: 7627-7631
作者: Meng, Lijian; Meng, Hui; Gong, Wenjie; Liu, Wei; Zhang, Zhidong

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收藏 | 浏览/下载：16/0 | 提交时间：2021/02/02

Pulsed laser deposition Thin films Bismuth selenide X-ray diffraction Electrical properties and measurements Surface morphology Scanning electron microscopy Crystal microstructure

Structure and Magnetic Properties of S-doped Mn3O4/S Composited Nanoparticles and Mn3O4 Nanoparticles 期刊论文 OAI收割
JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY, 2011, 卷号: 27, 期号: 6, 页码: 503-506
作者: He, X.; Wang, Z. H.; Geng, D. Y.; Zhang, Z. D.

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收藏 | 浏览/下载：28/0 | 提交时间：2021/02/02

Nanostructured materials Chemical synthesis X-ray diffraction Magnetic measurements

Control of N/N2 species ratio in NO plasma for p-type doping of ZnO (EI CONFERENCE) 会议论文 OAI收割
作者: Chen X.; Liu L.; Liu L.; Li B.; Li B.

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Nitrogen-doped ZnO thin films were grown on c-plane sapphire (Al 2O3) substrates via plasma-assisted molecular beam epitaxy using plasma activated nitric oxide (NO) as the oxygen source and dopant. X-ray diffraction measurements indicate that a small NO flux benefits the crystal quality of the thin films. Hall effect measurements indicate that the electron density of the ZnO films decreases gradually with decreasing NO flux and the conduction reverses to p-type at a certain flux. Optical emission spectra indicate that the N atom content in the NO plasma increases with decreasing NO flux and the origin of this is discussed. X-ray photoelectron spectroscopy measurements demonstrate that the number of N atom occupied O sites in the ZnO lattice increases correspondingly. 2011 American Institute of Physics.

Fabrication of high-efficiency ultraviolet blazed gratings by use of direct Ar2-CHF3 ion-beam etching through a rectangular photoresist mask (EI CONFERENCE) 会议论文 OAI收割
International Symposium on Photoelectronic Detection and Imaging 2011: Sensor and Micromachined Optical Device Technologies, May 24, 2011 - May 26, 2011, Beijing, China
Tan X.

收藏 | 浏览/下载：24/0 | 提交时间：2013/03/25

In ultraviolet spectroscopy groove irregularity and surface roughness of nanometer magnitude can cause a significant loss of diffraction efficiency. Therefore there is a constant need to improve the diffraction efficiency. A blazed grating can concentrate most of the light intensity into a desired diffraction order it is important to control the groove shape precisely so it is the optimum choice among gratings of different kinds of profile. As the operating wavelength of most UV spectral applications is less than 200 nm especially the blaze angle and the apical angle. We have presented a direct shaping method to fabricate EUV blazed gratings by using an ion-beam mixture of Ar+ and CHF2 +to etch K9 glass with a rectangular photoresist mask. With this method the required blaze angle is small we have succeeded in fabricating well-shaped UV blazed gratings with a 1200 line/mm groove density and 8.54 blaze angles and 1200 line/mm groove density and 11.68 blaze angles and the metrical efficiency is about 81% and 78%. The good performance of the gratings was verified by diffraction efficiency measurements. When one uses the etching model the conditions on the ion-beam grazing incident angle and the CHF3partial pressure should be noted. Besides since the etched groove shape depends on the aspect ratio of the photoresist mask ridge if we wish to fabricate larger gratings with this method we must improve the uniformity of the photoresist mask before ion-beam etching. 2011 Copyright Society of Photo-Optical Instrumentation Engineers (SPIE).