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浏览/检索结果: 共21条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 A Rutile TiO2 Electron Transport Layer for the Enhancement of Charge Collection for Efficient Perovskite Solar Cells 期刊论文  OAI收割 ANGEWANDTE CHEMIE-INTERNATIONAL EDITION, 2019, 卷号: 58, 期号: 28, 页码: 9414-9418 作者:  Wang, Yongling;  Wan, Jiawei;  Ding, Jie;  Hu, Jin-Song;  Wang, Dan   |  收藏  |  浏览/下载：70/0  |  提交时间：2019/10/18 electron lifetime  interfaces  open circuit voltage  perovskite solar cells  rutile TiO2   Failure Mechanisms of SAC/Fe-Ni Solder Joints During Thermal Cycling 期刊论文  OAI收割 JOURNAL OF ELECTRONIC MATERIALS, 2017, 卷号: 46, 期号: 8, 页码: 5338-5348 Gao, Li-Yin; Liu, Zhi-Quan; Li, Cai-Fu 收藏  |  浏览/下载：42/0  |  提交时间：2017/08/17 Fe-Ni under bump metallization (UBM)  thermal cycling  microstructural evolution  lifetime  recrystallization  electron backscatter diffraction (EBSD)   Enhancing photoactivity for hydrogen generation by electron tunneling via flip-flop hopping over iodinated graphitic carbon nitride 期刊论文  OAI收割 Applied Catalysis B: Environmental, 2017, 卷号: 204, 页码: 33-42 作者:  Li Z(李振);  Tian B(田彬);  Zhang WY(张文妍);  Zhang XQ(张旭强);  Wu YQ(吴玉琪) 收藏  |  浏览/下载：38/0  |  提交时间：2016/12/01 Iodine-decorated graphitic carbon nitride  Flip-flop electron tunneling  Enhanced conductivity  Lifetime of photogenerated charges  High photocatalytic activity for hydrogen generation   Anylasis and comparison of several methods for calculation of positron bulk lifetime in perfect crystals 期刊论文  OAI收割 ACTA PHYSICA SINICA, 2014, 卷号: 63 -   |  收藏  |  浏览/下载：44/0  |  提交时间：2020/10/26 DENSITY-FUNCTIONAL THEORY  AUGMENTED-WAVE METHOD  ANNIHILATION  SOLIDS  PSEUDOPOTENTIALS  APPROXIMATION  METALS  SPECTROSCOPY  SURFACES  STATES  positron bulk lifetime  perfect crystals  positron-electron correlation potential  enhancement factor   基于薄膜电极溶胶修饰的染料敏化太阳电池光电特性研究 期刊论文  OAI收割 物理学报, 2012, 期号: 4, 页码: 1+8 作者:  胡林华 收藏  |  浏览/下载：17/0  |  提交时间：2012/07/07 dye-sensitized solar cell  sol  electron lifetime  electron transit time   Effect of ka-band microwave on the spin dynamics of electrons in a gaas/al0.35ga0.65as heterostructure 期刊论文  iSwitch采集 Applied physics letters, 2009, 卷号: 94, 期号: 19, 页码: 3 作者:  Luo, Haihui;  Qian, Xuan;  Gu, Xiaofang;  Ji, Yang;  Umansky, Vladimir 收藏  |  浏览/下载：32/0  |  提交时间：2019/05/12 Aluminium compounds  Carrier lifetime  Gallium arsenide  High-frequency effects  Iii-v semiconductors  Optical kerr effect  Semiconductor heterojunctions  Spin dynamics  Two-dimensional electron gas   Effect of Ka-band microwave on the spin dynamics of electrons in a GaAs/Al0.35Ga0.65As heterostructure 期刊论文  OAI收割 applied physics letters, 2009, 卷号: 94, 期号: 19, 页码: art. no. 192107 作者:  Qian X 收藏  |  浏览/下载：92/7  |  提交时间：2010/03/08 aluminium compounds  carrier lifetime  gallium arsenide  high-frequency effects  III-V semiconductors  optical Kerr effect  semiconductor heterojunctions  spin dynamics  two-dimensional electron gas   Study on the local structure of (CrO6)(9-) complex in garnet crystals by optical and EPR spectrum 期刊论文  OAI收割 Journal of Physics and Chemistry of Solids, 2008, 卷号: 69, 期号: 4, 页码: 913-917 J. L. Huang; X. Y. Kuang; A. J. Mao; H. Wang 收藏  |  浏览/下载：16/0  |  提交时间：2012/04/13 optical materials  crystal structure  crystal fields  electron  paramagnetic resonance (EPR)  temperature-dependence  cr-3+ luminescence  cr3+  ions  parameters  centers  lifetime  fields  ruby   Defect characterization of 6H-SiC studied by slow positron beam 期刊论文  OAI收割 CHINESE JOURNAL OF CHEMICAL PHYSICS, 2008, 卷号: 21, 期号: 4, 页码: 333-338 作者:  Wang Haiyun;  Weng Huimin;  Zhou Xianyi   |  收藏  |  浏览/下载：25/0  |  提交时间：2021/12/13 IRRADIATED SILICON-CARBIDE  ELECTRON-SPIN-RESONANCE  LIFETIME SPECTROSCOPY  RADIATION DEFECTS  ATOMIC DEFECTS  ANNIHILATION  PHOTOLUMINESCENCE  MODES  positron annihilation  defect  semiconductor   The spectral feature analysis of semiconductor thin disk laser (EI CONFERENCE) 会议论文  OAI收割 Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007, Wuhan, China 作者:  Li J.;  Wang L.-J.;  Wang L.-J.;  Ning Y.-Q.;  Li J. 收藏  |  浏览/下载：25/0  |  提交时间：2013/03/25 The semiconductor thin disk laser is a new type of semiconductor laser. This work gives the basic operation function of semiconductor disk laser  and analyses the heat effect by the experimentally measured photoluminescence spectrum of the laser chip at different pump power and different temperature. We can see that: with increasing pump power  the thermal effects of the gain material becomes seriously and causes the saturation of carrier lifetime  so the electron-hole pair created in the absorbtion layer have no enough time to rate to one of the wells  and the non-radiative recombination happens in the barrier. When the thermal effects becomes stronger  the chip will not lasing. This phenomenon is from the smaller energy offset between barrier and quantum well. We optimize the original structure design and experimental technology. A non-absorbing AlGaAs layer who is transparent to the pumping and laser wavelength is added to confine the carriers in the quantum wells. At the same time a DBR with double reflecting band is induced to improve the absorbing efficiency of the pumping light. The single QW is replaced by the three narrow QWs  This three QWs structure can add the quantum state of QW  increase the recombination probability of carriers in the QWs and reduce the heat effect. The chemical etch equipment is also improved to control the surface unevenness to be within 50 nm.