中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
首页
机构
成果
学者
登录
注册
登陆
×
验证码:
换一张
忘记密码?
记住我
×
校外用户登录
CAS IR Grid
机构
计算技术研究所 [4]
上海硅酸盐研究所 [4]
金属研究所 [2]
化学研究所 [1]
采集方式
OAI收割 [11]
内容类型
期刊论文 [11]
发表日期
2023 [1]
2022 [2]
2020 [1]
2019 [5]
2018 [1]
2017 [1]
更多
学科主题
Materials ... [1]
Nanoscienc... [1]
筛选
浏览/检索结果:
共11条,第1-10条
帮助
条数/页:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
排序方式:
请选择
题名升序
题名降序
提交时间升序
提交时间降序
作者升序
作者降序
发表日期升序
发表日期降序
FeCrypto: Instruction Set Architecture for Cryptographic Algorithms Based on FeFET-Based In-Memory Computing
期刊论文
OAI收割
IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 2023, 卷号: 42, 期号: 9, 页码: 2889-2902
作者:
Liu, Rui
;
Zhang, Xiaoyu
;
Xie, Zhiwen
;
Wang, Xinyu
;
Li, Zerun
  |  
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2023/12/04
Computing-in-memory (CiM)
cryptographic algorithm
ferroelectric field-effect transistor (FeFET)
instruc-tion set architecture (ISA)
Re-FeMAT: A Reconfigurable Multifunctional FeFET-Based Memory Architecture
期刊论文
OAI收割
IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 2022, 卷号: 41, 期号: 11, 页码: 5071-5084
作者:
Zhang, Xiaoyu
;
Liu, Rui
;
Song, Tao
;
Yang, Yuxin
;
Han, Yinhe
  |  
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2023/07/12
Convolutional neural network (CNN)
ferroelectric field-effect transistor (FeFET)
few-shot learning
in-memory processing
ternary content-addressable memory (TCAM)
Understanding and modulation of resistive switching behaviors in PbZr0.52Ti0.48O3/La0.67Sr0.33MnO3/Nb:SrTiO3 multilayer junctions
期刊论文
OAI收割
APPLIED SURFACE SCIENCE, 2022, 卷号: 574, 页码: 11
作者:
Zheng, Hang Yu
;
Bai, Yu
;
Shao, Yan
;
Yu, Hai Yi
;
Chen, Bing
  |  
收藏
  |  
浏览/下载:28/0
  |  
提交时间:2022/07/01
Ferroelectric multilayer junction
Resistive switching
Ferroelectric field effect
Depletion layer width
The Impact of Ferroelectric FETs on Digital and Analog Circuits and Architectures
期刊论文
OAI收割
IEEE DESIGN & TEST, 2020, 卷号: 37, 期号: 1, 页码: 79-99
作者:
Chen, Xiaoming
;
Sun, Xiaoyu
;
Wang, Panni
;
Datta, Suman
;
Hu, Xiaobo Sharon
  |  
收藏
  |  
浏览/下载:29/0
  |  
提交时间:2020/12/10
Iron
Transistors
Computer architecture
Switches
Capacitance
Logic gates
Computational modeling
Ferroelectric Field Effect Transistor
FeFET
Negative Capacitance Field Effect Transistor
NCFET
Preisach model
FPGAs
content addressable memories
CAM
TCAM
compute-in-memory
analog synapse
Reliable Nonvolatile Memory Black Phosphorus Ferroelectric Field-Effect Transistors with van der Waals Buffer
期刊论文
OAI收割
ACS APPLIED MATERIALS & INTERFACES, 2019, 卷号: 11, 期号: 45, 页码: 42358-42364
作者:
Yan, Shili
;
Huang, Hai
;
Xie, Zhijian
;
Ye, Guojun
;
Li, Xiao-Xi
  |  
收藏
  |  
浏览/下载:22/0
  |  
提交时间:2021/02/02
black phosphorus
P(VDF-TrFE)
nonvolatile ferroelectric memories
field-effect transistors (FETs)
anti-hysteresis
Nonvolatile Control of the Electronic Properties of In2-xCrxO3 Semiconductor Films by Ferroelectric Polarization Charge
期刊论文
OAI收割
ACS APPLIED MATERIALS & INTERFACES, 2019, 卷号: 11, 期号: 35, 页码: 32449
作者:
Xu, Meng
;
Yan, Jian-Min
;
Guo, Lei
;
Wang, Hui
;
Xu, Zhi-Xue
  |  
收藏
  |  
浏览/下载:83/0
  |  
提交时间:2019/12/26
ferroelectric field effect
ferroelectric single crystal
electronic properties
wide-band-gap oxide semiconductors films
magnetoresistance
Room-Temperature Reversible and Nonvolatile Tunability of Electrical Properties of Cr-Doped In2O3 Semiconductor Thin Films Gated by Ferroelectric Single Crystal and Ionic Liquid
期刊论文
OAI收割
ADVANCED ELECTRONIC MATERIALS, 2019, 卷号: 5, 期号: 7
作者:
Xu, Meng
;
Yan, Jian-Min
;
Chen, Ting-Wei
;
Xu, Zhi-Xue
;
Wang, Hui
  |  
收藏
  |  
浏览/下载:85/0
  |  
提交时间:2019/12/26
electrical properties
ferroelectric field effect
ionic liquids
oxide semiconductors
PMN-PT single crystals
Power and Area Efficient FPGA Building Blocks Based on Ferroelectric FETs
期刊论文
OAI收割
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2019, 卷号: 66, 期号: 5, 页码: 1780-1793
作者:
Chen, Xiaoming
;
Ni, Kai
;
Niemier, Michael T.
;
Han, Yinhe
;
Datta, Suman
  |  
收藏
  |  
浏览/下载:75/0
  |  
提交时间:2019/08/16
Ferroelectric field-effect transistor (FeFET)
field-programmable gate array (FPGA)
lookup table (LUT)
routing switch
Nonvolatile and Reversible Ferroelectric Control of Electronic Properties of Bi2Te3 Topological Insulator Thin Films Grown on Pb(Mg1/3Nb2/3)O-3-PbTiO3 Single Crystals
期刊论文
OAI收割
ACS APPLIED MATERIALS & INTERFACES, 2019, 卷号: 11, 期号: 9, 页码: 9548
作者:
Yan, Jian-Min
;
Xu, Zhi-Xue
;
Chen, Ting-Wei
;
Xu, Meng
;
Zhang, Chao
  |  
收藏
  |  
浏览/下载:87/0
  |  
提交时间:2019/12/26
ferroelectric field effect
ferroelectric single crystal
electronic properties
topological insulator thin films
magneto resistance
surface state
Integration of Oxide Semiconductor Thin Films with Relaxor-Based Ferroelectric Single Crystals with Large Reversible and Nonvolatile Modulation of Electronic Properties
期刊论文
OAI收割
ACS APPLIED MATERIALS & INTERFACES, 2018, 卷号: 10, 期号: 38, 页码: 32809, 32817
作者:
Xu, Zhi-Xue
  |  
收藏
  |  
浏览/下载:60/0
  |  
提交时间:2018/12/28
ferroelectric field effect device
ferroelectric single crystal
electronic properties
tin dioxide thin film
magnetoresistance