机构

• 半导体研究所 [5]
• 苏州纳米技术与纳米仿... [4]

采集方式

• OAI收割 [7]
• iSwitch采集 [2]

内容类型

• 期刊论文 [9]

发表日期

• 2015 [1]
• 2013 [2]
• 2012 [1]
• 2008 [2]
• 2006 [3]

学科主题

• 半导体材料 [2]
• 半导体物理 [1]

筛选

浏览/检索结果: 共9条，第1-9条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Normally Off AlGaN/GaN MIS-High-Electron Mobility Transistors Fabricated by Using Low Pressure Chemical Vapor Deposition Si3N4 Gate Dielectric and Standard Fluorine Ion Implantation 期刊论文  OAI收割 IEEE ELECTRON DEVICE LETTERS, 2015, 卷号: 36, 期号: 11, 页码: 4 作者:  Zhang, ZL(张志利);  Fu, K(付凯);  Deng, XG(邓旭光);  Zhang, XD(张晓东);  Fan, YM(范亚明) 收藏  |  浏览/下载：79/0  |  提交时间：2015/12/31 AlGaN/GaN high electron mobility transistor (HEMT)  standard fluorine ion implantation  normally off   A Double-Gate AlGaN/GaN HEMT With Improved Dynamic Performance 期刊论文  OAI收割 IEEE ELECTRON DEVICE LETTERS, 2013, 卷号: 34, 期号: 6, 页码: 747-749 作者:  Cai, Y(蔡勇);  Zhao, DS(赵德胜);  Qin, H(秦华);  Zhang, BS(张宝顺);  Zeng, CH(曾春红) 收藏  |  浏览/下载：40/0  |  提交时间：2013/12/30 AlGaN/GaN high electron mobility transistor (HEMT)  dynamic performance  power device   Dynamic Characterizations of AlGaN/GaN HEMTs With Field Plates Using a Double-Gate Structure 期刊论文  OAI收割 IEEE ELECTRON DEVICE LETTERS, 2013, 卷号: 34, 期号: 2, 页码: 217-219 作者:  Zeng, CH(曾春红);  Zhang, BS(张宝顺);  Cai, Y(蔡勇) 收藏  |  浏览/下载：28/0  |  提交时间：2014/01/13 AlGaN/GaN high-electron-mobility transistor (HEMT)  dynamic performance  power device   Enhancement-Mode Operation of Nano-Channel Array (NCA) AlGaN/GaN HEMTs 期刊论文  OAI收割 Electron Device Letters, 2012, 卷号: 33, 期号: 3, 页码: 354 - 356 作者:  Yong Cai（蔡勇）;  Wenhua Shi（时文华）;  Baoshun Zhang (张宝顺);  Baoshun Zhang (张宝顺);  Hua Qin（秦华） 收藏  |  浏览/下载：21/0  |  提交时间：2013/01/22 AlGaN/GaN high electron mobility transistor (HEMT)  enhancement-mode (E-mode)  high-frequency  nanochannel array (NCA)   Growth and fabrication of algan/gan hemt based on si(111) substrates by mocvd 期刊论文  iSwitch采集 Microelectronics journal, 2008, 卷号: 39, 期号: 9, 页码: 1108-1111 作者:  Luo, Weijun;  Wang, Xiaoliang;  Xiao, Hongling;  Wang, Cuimie;  Ran, Junxue 收藏  |  浏览/下载：52/0  |  提交时间：2019/05/12 Algan/gan  High electron mobility transistor (hemt)  Si (111)   Growth and fabrication of AlGaN/GaN HEMT based on Si(111) substrates by MOCVD 期刊论文  OAI收割 microelectronics journal, 2008, 卷号: 39, 期号: 9, 页码: 1108-1111 Luo, WJ; Wang, XL; Xiao, HL; Wang, CM; Ran, JX; Guo, LC; Li, JP; Liu, HX; Chen, YL; Yang, FH; Li, JM 收藏  |  浏览/下载：52/0  |  提交时间：2010/03/08 AlGaN/GaN  high electron mobility transistor (HEMT)  Si (111)   A bistable, self-latching inverter by the monolithic integration of resonant tunnelling diode and high electron mobility transistor 期刊论文  iSwitch采集 Chinese physics, 2006, 卷号: 15, 期号: 10, 页码: 2422-2426 作者:  Ma Long;  Huang Ying-Long;  Zhang Yang;  Yang Fu-Hua;  Wang Liang-Chen 收藏  |  浏览/下载：27/0  |  提交时间：2019/05/12 Resonant tunnelling diode (rtd)  High electron mobility transistor (hemt)  Molecular beam epitaxy (mbe)  Bistability  Self-latching   A bistable, self-latching inverter by the monolithic integration of resonant tunnelling diode and high electron mobility transistor 期刊论文  OAI收割 chinese physics, 2006, 卷号: 15, 期号: 10, 页码: 2422-2426 Ma L (Ma Long); Huang YL (Huang Ying-Long); Zhang Y (Zhang Yang); Yang FH (Yang Fu-Hua); Wang LC (Wang Liang-Chen) 收藏  |  浏览/下载：31/0  |  提交时间：2010/04/11 resonant tunnelling diode (RTD)  high electron mobility transistor (HEMT)  molecular beam epitaxy (MBE)  bistability  self-latching   Self-consistent analysis of double-delta-doped InAlAs/InGaAs/InP HEMTs 期刊论文  OAI收割 chinese physics, 2006, 卷号: 15, 期号: 11, 页码: 2735-2741 Li DL (Li Dong-Lin); Zeng YP (Zeng Yi-Ping) 收藏  |  浏览/下载：45/0  |  提交时间：2010/04/11 two-dimensional electron gas  high electron mobility transistor  self-consistent calculation  InAlAs/InGaAs heterostructure  CHARGE CONTROL MODEL  ELECTRON-MOBILITY TRANSISTORS  PSEUDOMORPHIC INGAAS HEMT  FIELD-EFFECT TRANSISTOR  QUANTUM-WELL  ALGAAS/INGAAS PHEMTS  GATE RECESS  HIGH-SPEED  HETEROJUNCTION  CHANNEL