机构

• 半导体研究所 [21]
• 金属研究所 [7]
• 过程工程研究所 [4]
• 苏州纳米技术与纳米仿... [3]
• 高能物理研究所 [1]

采集方式

• OAI收割 [28]
• iSwitch采集 [8]

内容类型

• 期刊论文 [32]
• 会议论文 [4]

发表日期

• 2021 [2]
• 2015 [2]
• 2013 [1]
• 2010 [1]
• 2009 [1]
• 2008 [1]
• 更多

学科主题

• 半导体材料 [12]
• Boron Nitr... [1]
• Crystallog... [1]
• Epoxy Resi... [1]
• Styrene [1]
• Wear Of Ma... [1]
• 更多

筛选

浏览/检索结果: 共36条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Improvement in the charge dissipation performance of epoxy resin composites by incorporating amino-modified boron nitride nanosheets 期刊论文  OAI收割 Materials Letters, 2021, 卷号: 298 作者:  He, Shaojian;  Luo, Chumeng;  Zheng, Youzhe;  Xue, Yang;  Song, Xupeng   |  收藏  |   Improved thermal conductivity of styrene acrylic resin with carbon nanotubes, graphene and boron nitride hybrid fillers 期刊论文  OAI收割 Carbon Resources Conversion, 2021, 卷号: 4, 页码: 190-196 作者:  Jia, Fuhua;  Fagbohun, Emmanuel Oluwaseyi;  Wang, Qianyu;  Zhu, Duoyin;  Zhang, Jianling   |  收藏  |   Abnormal InGaN growth behavior in indium-desorption regime in metalorganic chemical vapor deposition 期刊论文  OAI收割 JOURNAL OF CRYSTAL GROWTH, 2015, 卷号: 409, 期号: 0, 页码: 51-55 作者:  Zhou, K(周堃);  Ikeda, M;  Liu, JP(刘建平);  Zhang, SM(张书明);  Li, ZC(李增成) 收藏  |   Influence of substrate surface defects on the homoepitaxial growth of GaN (0001) by metalorganic vapor phase epitaxy 期刊论文  OAI收割 JOURNAL OF CRYSTAL GROWTH, 2015, 卷号: 416, 页码: 7 作者:  Zhou, K(周堃);  Liu, JP(刘建平);  Ikeda, M;  Zhang, SM(张书明);  Li, DY(李德尧) 收藏  |   Hillock formation and suppression on c-plane homoepitaxial GaN Layers grown by metalorganic vapor phase epitaxy 期刊论文  OAI收割 JOURNAL OF CRYSTAL GROWTH, 2013, 卷号: 371, 期号: 0, 页码: 7-10 作者:  Li, DY(李德尧);  Zhang, SM(张书明);  Liu, JP(刘建平);  Zhang, LQ(张立群);  Yang, H(杨辉) 收藏  |   Structural, electronic, and optical properties of wurtzite and rocksalt InN under pressure 期刊论文  OAI收割 Physical Review B, 2010, 卷号: 81, 期号: 3 M. Y. Duan; L. He; M. Xu; M. Y. Xu; S. Y. Xu; K. Ostrikov 收藏  |   Structural, thermodynamic and electronic properties of zinc-blende AlN from first-principles calculations 期刊论文  OAI收割 Chinese Physics B, 2009, 卷号: 18, 期号: 3, 页码: 1207-1213 W. Zhang; Y. Cheng; J. Zhu; X. R. Chen 收藏  |   Growth of GaN single crystals by Ca(3)N(2) flux 期刊论文  OAI收割 Scripta Materialia, 2008, 卷号: 58, 期号: 4, 页码: 319-322 G. Wang; W. X. Yuan; J. K. Jian; H. Q. Bao; J. F. Wang; X. L. Chen; J. K. Liang 收藏  |   First-principles calculations of structure and high pressure phase transition in gallium nitride 期刊论文  OAI收割 Chinese Physics, 2007, 卷号: 16, 期号: 12, 页码: 3772-3776 L. N. Tan; C. E. Hu; B. R. Yu; X. R. Chen 收藏  |   The role of sb in the molecular beam epitaxy growth of 1.30-1.55 mu m wavelength gainnas/gaas quantum well with high indium content 期刊论文  iSwitch采集 Journal of crystal growth, 2006, 卷号: 290, 期号: 2, 页码: 494-497 作者:  Wu, DH;  Niu, ZC;  Zhang, SY;  Ni, HQ;  He, ZH 收藏  |