机构

• 大连化学物理研究所 [2]
• 力学研究所 [1]
• 长春光学精密机械与物... [1]
• 半导体研究所 [1]

采集方式

• OAI收割 [5]

内容类型

• 期刊论文 [4]
• 会议论文 [1]

发表日期

• 2018 [1]
• 2017 [2]
• 2010 [1]
• 2005 [1]

学科主题

• 光电子学 [1]

筛选

浏览/检索结果: 共5条，第1-5条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 In-Plane Heterostructures Enable Internal Stress Assisted Strain Engineering in 2D Materials 期刊论文  OAI收割 SMALL, 2018, 卷号: 14, 期号: 15, 页码: 1703512 作者:  Liu F(刘峰);  Wang TC(王自强);  Tang QH(汤奇恒)   |  收藏  |  浏览/下载：31/0  |  提交时间：2018/10/30 2D materials  Eshelby inclusion theory  in-plane heterostructures  MD simulations  strain engineering   Synthesis of High-Quality Graphene and Hexagonal Boron Nitride Monolayer In-Plane Heterostructure on Cu-Ni Alloy 期刊论文  OAI收割 ADVANCED SCIENCE, 2017, 卷号: 4, 期号: 9 作者:  Sun, Julong;  Xie, Xiaoming;  Lu, Guangyuan;  Wu, Tianru;  Yang, Peng 收藏  |  浏览/下载：24/0  |  提交时间：2017/12/20 chemical vapor deposition  Cu-Ni alloy  graphene and h-BN in-plane heterostructures  high quality   Synthesis of High-Quality Graphene and Hexagonal Boron Nitride Monolayer In-Plane Heterostructure on Cu-Ni Alloy 期刊论文  OAI收割 ADVANCED SCIENCE, 2017, 卷号: 4, 期号: 9 作者:  Ajayan, Pulickel M.;  Lu, Guangyuan;  Wu, Tianru;  Yang, Peng;  Yang, Yingchao 收藏  |  浏览/下载：29/0  |  提交时间：2017/12/20 chemical vapor deposition  Cu-Ni alloy  graphene and h-BN in-plane heterostructures  high quality   Evaluation of both composition and strain distributions in InGaN epitaxial film using x-ray diffraction techniques 期刊论文  OAI收割 chinese physics b, 2010, 卷号: 19, 期号: 10, 页码: art. no. 106802 Guo X (Guo Xi); Wang H (Wang Hui); Jiang DS (Jiang De-Sheng); Wang YT (Wang Yu-Tian); Zhao DG (Zhao De-Gang); Zhu JJ (Zhu Jian-Jun); Liu ZS (Liu Zong-Shun); Zhang SM (Zhang Shu-Ming); Yang H (Yang Hui) 收藏  |  浏览/下载：36/0  |  提交时间：2010/11/02 InGaN  In-plane grazing incidence x-ray diffraction  reciprocal space mapping  biaxial strain  CRITICAL LAYER THICKNESS  OPTICAL-PROPERTIES  LATTICE-CONSTANTS  GAN  HETEROSTRUCTURES  ALLOYS  WELLS   Characterization of ZnO/Mg0.12Zn0.88O heterostructure grown by plasma-assisted molecular beam epitaxy (EI CONFERENCE) 会议论文  OAI收割 13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004, 13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004 Lu Y. M.; Wu C. X.; Wei Z. P.; Zhang Z. Z.; Zhao D. X.; Zhang J. Y.; Liu Y. C.; Shen D. Z.; Fan X. W. 收藏  |  浏览/下载：28/0  |  提交时间：2013/03/25 In this paper  Mg0.12Zn0.88O/ZnO heterostructures were fabricated on c-plane sapphire (Al2O3) substrates by plasma-assisted molecular beam epitaxy (P-MBE). The quality of the Mg 0.12Zn0.88O alloy thin film was characterized by X-ray diffraction (XRD) and reflection high-energy electron diffraction (RHEED). Optical properties of the Mg0.12Zn0.88O/ZnO heterostructure were studied by absorption and photoluminescence (PL) spectra. At room temperature (RT)  Mg0.12Zn0.88O/ZnO heterostructures show two absorption edges originating from ZnO and Mg 0.12Zn0.88O layers  respectively. In PL spectra  two ultraviolet emission bands related to the ZnO layer and the Mg 0.12Zn0.88O layer were observed. The emission band from Mg0.12Zn0.88O layer dominates at moderately lower temperature  and the luminescence of ZnO becomes gradually important with increasing temperature. This is suggested to exist as a potential barrier in the interface and to restrict the relaxation of the carriers from the Mg 0.12Zn0.88O layer to ZnO layer. As the thickness of ZnO layer decreases  the emission from the Mg0.12Zn0.88O layer becomes weaker and weaker. When the ZnO thickness is up to 2 nm  only the luminescence of the ZnO layer is observed at RT. The quenching of the emission corresponding to the MgZnO layer indicates the existence of a strong injection process in the samples with thinner ZnO layer. 2005 Elsevier B.V. All rights reserved.