中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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Meta-substituted bipolar imidazole based emitter for efficient non-doped deep blue organic light emitting devices with a high electroluminescence 期刊论文  OAI收割
JOURNAL OF PHOTOCHEMISTRY AND PHOTOBIOLOGY A-CHEMISTRY, 2019, 卷号: 379, 页码: 72-78
作者:  
Islam, Amjad;  Usman, Khurram;  Wattoo, Abdul Ghafar;  Shahid, Tauseef;  Abbas, Nadeem
  |  收藏  |  浏览/下载:60/0  |  提交时间:2019/12/18
Spatiotemporal Summation and Recognition Effects for a Dual-Emitter Light-Induced Neuromorphic Device 期刊论文  OAI收割
Ieee Transactions on Electron Devices, 2018, 卷号: 65, 期号: 1, 页码: 308-313
作者:  
Yang, Y. C.;  Shi, Z.;  Zhu, B. C.;  Yuan, J. L.;  Zhu, G. X.
  |  收藏  |  浏览/下载:14/0  |  提交时间:2019/09/17
Study of the beam loading effect in the CSNS/RCS 期刊论文  OAI收割
CHINESE PHYSICS C, 2015, 卷号: 39, 期号: 4, 页码: 47003
作者:  
Yuan YS(苑尧硕);  Li KW(李开玮);  Wang S(王生);  Wang N(王娜);  Yuan, YS
收藏  |  浏览/下载:54/0  |  提交时间:2016/04/18
Electric-field-induced effective anchoring energy in nematic liquid crystal (EI CONFERENCE) 会议论文  OAI收割
2010 International Conference on Display and Photonics, July 12, 2010 - July 13, 2010, Nanjing, China
Ye W.; Zhang Z.; Xing H.; Yang G.; Chen G.
收藏  |  浏览/下载:20/0  |  提交时间:2013/03/25
Ultraviolet photovoltaic characteristics of silver nanocluster doped ZnO thin films 期刊论文  OAI收割
Physica B-Condensed Matter, 2009, 卷号: 404, 期号: 8-11, 页码: 1550-1552
W. W. Liu; S. Q. Zhao; K. Zhao; W. Sun; Y. L. Zhou; K. J. Jin; H. B. Lue; M. He; G. Z. Yang
收藏  |  浏览/下载:18/0  |  提交时间:2012/04/13
Observation of the lightning-induced voltage in the horizontal conductor and its simulation 期刊论文  iSwitch采集
ACTA PHYSICA SINICA, 2008, 卷号: 57, 期号: 3, 页码: 1968-1975
作者:  
Yang Jing;  Qie Xiu-Shu;  Wang Jian-Guo;  Zhao Yang;  Zhang Qi-Lin
收藏  |  浏览/下载:27/0  |  提交时间:2019/10/08
Current-voltage characteristics with several threshold currents in insulating low-doped La1-xSrxMnO3 (x=0.10) thin films 期刊论文  OAI收割
Journal of Rare Earths, 2008, 卷号: 26, 期号: 4, 页码: 567-570
K. Zhao; J. F. Feng; M. He; H. B. Lu; K. J. Jin; Y. L. Zhou; G. Z. Yang
收藏  |  浏览/下载:23/0  |  提交时间:2012/04/13
Fabrication and investigation of tungsten deposit on top and bottom surfaces of thin film substrate 期刊论文  OAI收割
Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers, 2007, 卷号: 46, 期号: 9B, 页码: 6254-6257
Z. Q. Liu; K. Mitsuishi; K. Furuya
收藏  |  浏览/下载:10/0  |  提交时间:2012/04/13
Low drive-voltage and high-bandwidth electro-optic modulators based on BaTiO3 thin-film waveguides (EI CONFERENCE) 会议论文  OAI收割
Science and Technology of Dielectrics for Active and Passive Photonic Devices - 210th Electrochemical Society Meeting, October 29, 2006 - November 3, 2006, Cancun, Mexico
Sun D. G.; Fu X. H.; Liu Z. F.; Ho S. T.; Wessels B. W.
收藏  |  浏览/下载:45/0  |  提交时间:2013/03/25
We investigated electro-optic modulator structures to target low drive voltage  high-speed modulation  and small device size with c-axis grown BaTiO3/MgO ferro-electric thin films. In this study  the calculations are focused on the ideal thin film with a quadratic relation between the half-wave drive voltage V and the interaction length L in the electro-optic modulation case we obtained in previous work. With the quadratic electro-optic modulating relation and the optimal rib waveguide structure of BaTiO3/MgO thin films  the frequency-voltage-size performances for 2.5GHz  10GHz  40GHz  and 100GHz modulation bandwidths have been obtained under half-wave drive voltages of 0.8V  1.6V  3.0V and 4.8V  respectively  for the ideal film with r51=730 pm/V at 1550nm wavelength  where both the phase velocity matching condition and the conductor induced microwave attenuation are considered. The required device lengths to achieve these four typical values of modulation bandwidth are 3.3 mm  0.8 mm  0.4 mm and 0.2 mm  respectively. With the c-axis grown BaTiO3/MgO crystal thin films and the quadratic electro-optic modulating relation  an electro-optic coefficient of reff=180 pm/V for the c-axis grown BaTiO3/MgO ferro-electric thin films was measured  which is relatively far from the ideal value of r51=560 pm/V. copyright The Electrochemical Society.  
Laser-induced thermoelectric voltage in normal state MgB2 thin films 期刊论文  OAI收割
Applied Surface Science, 2006, 卷号: 253, 期号: 5, 页码: 2671-2673
S. Q. Zhao; Y. L. Zhou; K. Zhao; S. F. Wang; Z. H. Chen; K. J. Jin; H. B. Lu; B. L. Cheng; G. Z. Yang
收藏  |  浏览/下载:12/0  |  提交时间:2012/04/14