机构

• 半导体研究所 [4]
• 长春光学精密机械与物... [1]

采集方式

• OAI收割 [4]
• iSwitch采集 [1]

内容类型

• 会议论文 [3]
• 期刊论文 [2]

发表日期

• 2006 [2]
• 2002 [3]

学科主题

• 半导体材料 [3]

筛选

浏览/检索结果: 共5条，第1-5条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Low threshold field electron emission of diamond films (EI CONFERENCE) 会议论文  OAI收割 ICO20: Display Devices and Systems, August 21, 2005 - August 26, 2005, Changchun, China 作者:  Liu L.;  Wang W.;  Wang W.;  Li M.;  Liu L. 收藏  |  浏览/下载：21/0  |  提交时间：2013/03/25 Since CVD diamond film possesses desirable properties  it has been widely investigated  and much research has been made in this field. In this experiment  we mainly studied the characteristics of field emission from the CVD diamond films. The motivation for the experiment is to gain some insight into a possible emission mechanism. The diamond films are grown using a hot filament chemical vapor deposition  basing on the diamond micro-grits on silicon substrates. And the diamond micro-grits are deposited on silicon substrates using electrophoresis coat method  through a solution of diamond micro-grits in ethyl alcohol. This study has revealed that emission can be obtained at fields as low as 1.8V/m. And the field emission measurements were carried out at a pressure of 10-4Pa.   Homoepitaxial growth and characterization of 4H-SiC epilayers by low-pressure hot-wall chemical vapor deposition 会议论文  OAI收割 international conference on silicon carbide and related materials (icscrm 2005), pittsburgh, pa, sep 18-23, 2005 Sun, GS (Sun, Guosheng); Ning, J (Ning, Jin); Gong, QC (Gong, Quancheng); Gao, X (Gao, Xin); Wang, L (Wang, Lei); Liu, XF (Liu, Xingfang); Zeng, YP (Zeng, Yiping); Li, JM (Li, Jinmin) 收藏  |  浏览/下载：109/29  |  提交时间：2010/03/29 homoepitaxial growth  low-pressure hot-wall CVD  structural and optical characteristics  intentional doping  Schottky barrier diodes   In situ doping of 3C-SiC grown on (0001) sapphire substrates by LPCVD 期刊论文  OAI收割 silicon carbide and related materials 2001 pts 1 and 2 proceedings, 2002, 卷号: 389-3, 期号: 0, 页码: 339-342 Sun GS; Luo MC; Wang L; Zhu SR; Li JM; Zeng YP; Lin LY 收藏  |  浏览/下载：91/0  |  提交时间：2010/08/12 3C-SiC  in-situ doping  low-pressure CVD  sapphire substrate  CHEMICAL-VAPOR-DEPOSITION  COMPETITION EPITAXY   In situ doping of 3c-sic grown on (0001) sapphire substrates by lpcvd 期刊论文  iSwitch采集 Silicon carbide and related materials 2001, pts 1 and 2, proceedings, 2002, 卷号: 389-3, 页码: 339-342 作者:  Sun, GS;  Luo, MC;  Wang, L;  Zhu, SR;  Li, JM 收藏  |  浏览/下载：20/0  |  提交时间：2019/05/12 3c-sic  In-situ doping  Low-pressure cvd  Sapphire substrate   In situ doping of 3C-SiC grown on (0001) sapphire substrates by LPCVD 会议论文  OAI收割 international conference on silicon carbide and related materials, tsukuba, japan, oct 28-nov 02, 2001 Sun GS; Luo MC; Wang L; Zhu SR; Li JM; Zeng YP; Lin LY 收藏  |  浏览/下载：18/0  |  提交时间：2010/11/15 3C-SiC  in-situ doping  low-pressure CVD  sapphire substrate  CHEMICAL-VAPOR-DEPOSITION  COMPETITION EPITAXY