中国科学院机构知识库网格系统: 检索

Epitaxial growth and thermal stability of Ge1-xSnx alloys on Ge-buffered Si(001) substrates 期刊论文 OAI收割
journal of crystal growth, 2011, 卷号: 317, 期号: 1, 页码: 43-46
Su SJ; Wang W; Cheng BW; Zhang GZ; Hu WX; Xue CL; Zuo YH; Wang QM

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Thermal stability Molecular beam epitaxy Germanium tin alloys Germanium MOLECULAR-BEAM EPITAXY LOW-TEMPERATURE SEMICONDUCTORS GE(001)2X1

The Transition between Conformal Atomic Layer Epitaxy and Nanowire Growth 期刊论文 OAI收割
Journal of the American Chemical Society, 2010, 卷号: 132, 期号: 22, 页码: 7592-+
R. B. Yang, N. Zakharov, O. Moutanabbir, K. Scheerschmidt, L. M. Wu, U. Gosele, J. Bachmann and K. Nielsch

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molecular-beam epitaxy low-temperature core-shell semiconductor nanowires silicon nanowires gaas nanowires vls growth heterostructures nanorods si

Excitonic properties of vertically aligned ZnO nanotubes under high-density excitation (EI CONFERENCE) 会议论文 OAI收割
Lu Y. M.; Liang H. W.; Shen D. Z.; Zhang Z. Z.; Zhang J. Y.; Zhao D. X.; Liu Y. C.; Fan X. W.

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In this paper highly oriented and vertically arranged ZnO nanotubes are prepared on Al2O3 (0 0 0 1) substrate without employing any metal catalysts by plasma-assisted molecular beam epitaxy. The photoluminescence (PL) spectra at room temperature are studied under high excitation densities. Under lower excitation density (60 kW/cm2) PL spectrum shows that one strong free exciton emission (FE) locates at 3.306 eV. As the excitation density increases up to 200 kW/cm2 a new emission peak (Pn) located at low-energy side of FE is attributed to the spontaneous emission due to an exciton-exciton (Ex-E x) scattering process from two ground state excitons where one exciton is recombined by emitting a photon and the other is scattered into the excited states of n=2 3 4.... Under excitation density of 300 kW/cm 2 the stimulated emission originating from Ex-E x scattering is obtained. When the excitation density is above 580 kW/cm2 the emission from electron-hole plasma is observed in low-energy side of the P band and indicates a typical superradiation recombination processes with increasing excitation density. 2006 Elsevier B.V. All rights reserved.

Fabrication and electron emission of carbon microtubes (EI CONFERENCE) 会议论文 OAI收割
Technical Digest of the 18th International Vacuum Nanoelectronics Conference, IVNC 2005, July 10, 2005 - July 14, 2005, Oxford, United kingdom
作者: Liu L.; Liu L.; Wang W.; Wang W.

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Carbon nanotubes have been attracting attention because of their unique physical properties and their application potential for field emission cathode. Carbon nanotubes possess the following properties favorable for field emission material such as a high aspect ratio and sharp tip high chemical stability high mechanical strength stable at high temperature. Some research works on carbon nanotubes field emitter and field emission display have been reported. Here a kind of carbon microtubes and its field emission properties are introduced. They have some different properties with carbon nanotubes and the density is lower than carbon nanotubes bundles. These carbon microtubes are directly synthesized by liquidoid epitaxy method on silicon substrates at low temperature. The field emission properties of carbon microtubes are reported too. Carbon microtubes film is synthesized in liquid by electrolysis. The graphite plate is as anode and n-silicon substrate with resistivity of 4-8 cm is as cathode. The electrolysis current is about 5-8mA/cm2 and applied voltage is 800-1500V. Temperatures of the methanol base solution is maintained at 60C in process of deposition of carbon microtubes. Carbon microtubes film is observed by scanning electron microscopy(SEM) as shown in fig.1(a b). The wall's thickness of carbon microtube is about 60nm. The diameter of carbon microtube is about 0.8 m. Raman spectrum of carbon microtubes film shows the two peaks at 1342and 1560cm-1. The field emission properties of carbon microtubes are measured in high vacuum chamber(10-5Pa). The emission area of carbon microtubes is 0.5cm 0.5cm. The threshold of field emission of the carbon microtubes film is about 3.6V/ m. Field emission property of carbon microtubes film is shown in fig.2. Another when the electric field between anode and cathode is 10V/ m the electric field distribution on single carbon microtube is also given after calculation according to electric field theory. Fig 3 shows that electric field distribution vertical section on the of single carbon microtube top with 2 m of highness. These results may help us to understand field emission properties of carbon microtubes. According to research results it is found that liquidoid synthesis is simple method to produce carbon microtubes cold cathode material and the carbon microtubes have better field emission properties. 2005 IEEE.

Effect of InAlAs/InGaAs cap layer on optical properties of self-assembled InAs/GaAs quantum dots 期刊论文 OAI收割
journal of crystal growth, 2002, 卷号: 241, 期号: 3, 页码: 304-308
作者: Xu B; Li CM; Jin P; Ye XL; Li DB

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atomic force microscopy low dimensional structures nanostructures molecular beam epitaxy semiconducting III-V materials laser diodes TEMPERATURE-DEPENDENCE THRESHOLD CURRENT MU-M LASERS

Homoepitaxial growth and device characteristics of SiC on Si-face (0001) 6H-SiC 会议论文 OAI收割
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
Li JM; Sun GS; Zhu SR; Wang L; Luo MC; Zhang FF; Lin LY

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X-ray diffraction molecular beam epitaxy semiconducting silicon compounds LOW-TEMPERATURE GROWTH FILMS

Homoepitaxial growth and device characteristics of SiC on Si-face (0001) 6H-SiC 期刊论文 OAI收割
journal of crystal growth, 2001, 卷号: 227, 期号: 0, 页码: 816-819
Li JM; Sun GS; Zhu SR; Wang L; Luo MC; Zhang FF; Lin LY

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X-ray diffraction molecular beam epitaxy semiconducting silicon compounds LOW-TEMPERATURE GROWTH FILMS

Effect of InxGa1-xAs (0 <= x <= 0.4) capping layer on self-assembled 1.3 mu m wavelength InAs/GaAs quantum islands 期刊论文 OAI收割
journal of crystal growth, 2001, 卷号: 223, 期号: 3, 页码: 363-368
Wang XD; Niu ZC; Feng SL; Miao ZH

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atomic force microscopy low dimensional structures optical microscopy molecular beam epitaxy nanomaterials semiconducting III-V materials laser diodes TEMPERATURE-DEPENDENCE M PHOTOLUMINESCENCE INGAAS OVERGROWTH GAAS DOTS EMISSION ENERGY LASER

Formation of InAs quantum dots on low-temperature GaAs epi-layer 期刊论文 OAI收割
journal of crystal growth, 2000, 卷号: 218, 期号: 2-4, 页码: 209-213
Wang XD; Niu ZC; Wang H; Feng SL

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quantum dot low-temperature GaAs As precipitates annealing TEM PL MOLECULAR-BEAM EPITAXY ISLANDS GROWTH SURFACES

Study of self-assembled InAs quantum dots grown on low temperature GaAs epi-layer 期刊论文 OAI收割
journal of infrared and millimeter waves, 2000, 卷号: 19, 期号: 3, 页码: 177-180
Wang XD; Wang H; Wang HL; Niu ZC; Feng SL

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InAs quantum dots low temperature GaAs As precipitates MOLECULAR-BEAM EPITAXY DEPENDENCE