中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
机构
采集方式
内容类型
发表日期
学科主题
筛选

浏览/检索结果: 共8条,第1-8条 帮助

条数/页: 排序方式:
Transilient Response to Acetone Gas Using the Interlocking p plus n Field-Effect Transistor Circuit 期刊论文  OAI收割
SENSORS, 2018, 卷号: 18, 期号: 6, 页码: 11
作者:  
Zhou, Xinyuan;  Wang, Jinxiao;  Wang, Zhou;  Bian, Yuzhi;  Wang, Ying
  |  收藏  |  浏览/下载:42/0  |  提交时间:2018/10/11
Synergetic p plus n Field-Effect Transistor Circuits for ppb-Level Xylene Detection 期刊论文  OAI收割
IEEE SENSORS JOURNAL, 2018, 卷号: 18, 期号: 9, 页码: 3875-3882
作者:  
Zhou, Xinyuan;  Wang, Ying;  Wang, Zhou;  Yang, Liping;  Wu, Xiaofeng
  |  收藏  |  浏览/下载:30/0  |  提交时间:2018/06/11
Amplifying the Signal of Metal Oxide Gas Sensors for Low Concentration Gas Detection 期刊论文  OAI收割
IEEE SENSORS JOURNAL, 2017, 卷号: 17, 期号: 9, 页码: 2841-2847
作者:  
Zhou, Xinyuan;  Wang, Ying;  Wang, Jinxiao;  Xie, Zheng;  Wu, Xiaofeng
收藏  |  浏览/下载:24/0  |  提交时间:2017/09/06
Dose-rate sensitivity of deep sub-micro complementary metal oxide semiconductor process 期刊论文  OAI收割
ACTA PHYSICA SINICA, 2016, 卷号: 65, 期号: 7
作者:  
Zheng, QW (Zheng Qi-Wen);  Cui, JW (Cui Jiang-Wei);  Wang, HN (Wang Han-Ning);  Zhou, H (Zhou Hang);  Yu, DZ (Yu De-Zhao)
收藏  |  浏览/下载:27/0  |  提交时间:2016/12/12
Reliability of partially-depleted silicon-on-insulator n-channel metal-oxide-semiconductor field-effect transistor under the ionizing radiation environment 期刊论文  OAI收割
ACTA PHYSICA SINICA, 2015, 卷号: 64, 期号: 8
作者:  
Zhou, H (Zhou Hang);  Cui, JW (Cui Jiang-Wei);  Zheng, QW (Zheng Qi-Wen);  Guo, Q (Guo Qi);  Ren, DY (Ren Di-Yuan)
  |  收藏  |  浏览/下载:32/0  |  提交时间:2018/01/26
The influence of channel length on total ionizing dose effect in deep submicron technologies 期刊论文  OAI收割
ACTA PHYSICA SINICA, 2012, 卷号: 61, 期号: 5, 页码: 50702
Hu, ZY; Liu, ZL; Shao, H; Zhang, ZX; Ning, BX; Bi, DW; Chen, M; Zou, SC
收藏  |  浏览/下载:26/0  |  提交时间:2013/04/17
Theorical model of enhanced low dose rate sensitivity observed in p-type metal-oxide-semiconductor field-effect transistor 期刊论文  OAI收割
ACTA PHYSICA SINICA, 2011, 卷号: 60, 期号: 6
作者:  
Gao Bo;  Yu Xue-Feng;  Ren Di-Yuan;  Cui Jiang-Wei;  Lan Bo
收藏  |  浏览/下载:47/0  |  提交时间:2012/11/29
p型金属氧化物半导体场效应晶体管低剂量率辐射损伤增强效应模型研究 期刊论文  OAI收割
物理学报, 2011, 卷号: 60, 期号: 6, 页码: 812-818
作者:  
高博;  余学峰;  任迪远;  崔江维;  兰博
收藏  |  浏览/下载:26/0  |  提交时间:2012/11/29