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Chinese Academy of Sciences Institutional Repositories Grid
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Influence of high-dose nitrogen implantation on the positive charge density of the buried oxide of silicon-on-insulator wafers 期刊论文  OAI收割
acta physica sinica, 2011, 卷号: 60, 期号: 5, 页码: article no.56104
作者:  
Yu F
收藏  |  浏览/下载:106/6  |  提交时间:2011/07/06
Surface modification of poly(propylene carbonate) by oxygen ion implantation 期刊论文  OAI收割
Applied Surface Science, 2007, 卷号: 253, 期号: 12, 页码: 5436-5441
J. Z. Zhang; J. C. Kang; P. Hu; Q. L. Meng
收藏  |  浏览/下载:46/0  |  提交时间:2012/04/13
Effect of ion implantation upon erosion resistance of polyimide films in space environment 期刊论文  OAI收割
Transactions of Nonferrous Metals Society of China, 2006, 卷号: 16, 页码: S661-S664
S. W. Duo; M. S. Li; Y. C. Zhou
收藏  |  浏览/下载:23/0  |  提交时间:2012/04/13
Research on nitrogen implantation energy dependence of the properties of SIMON materials 期刊论文  OAI收割
nuclear instruments & methods in physics research section b-beam interactions with materials and atoms, 2006, 卷号: 242, 期号: 1-2, 页码: 585-587
Zhang EX; Sun JY; Chen J; Chen M; Zhang ZX; Li N; Zhang GQ; Wang X
收藏  |  浏览/下载:308/0  |  提交时间:2010/04/11
Optimized implant dose and energy to fabricate high-quality patterned SIMOX SOI materials 期刊论文  OAI收割
SOLID STATE COMMUNICATIONS, 2004, 卷号: 130, 期号: 3-4, 页码: 275-279
Dong, YM; Chen, J; Wang, X; Chen, M; Wang, X
收藏  |  浏览/下载:22/0  |  提交时间:2012/03/24
Broaden buried oxide layer of SOI structure in SIMOX using water plasma 期刊论文  OAI收割
2003 IEEE INTERNATIONAL SOI CONFERENCE, PROCEEDINGS, 2003, 页码: 181-182
Chen, J; Dong, YM; Wang, X; Yi, WB; Wang, X
收藏  |  浏览/下载:19/0  |  提交时间:2012/03/24
Influence of aging on the morphology and wettability of polytetrafluoroethylene implanted by high-fluence carbon ion 期刊论文  OAI收割
Materials Letters, 2002, 卷号: 56, 期号: 4, 页码: 410-417
J. Z. Zhang; L. H. Xu; X. J. Yu; X. H. Liu
收藏  |  浏览/下载:29/0  |  提交时间:2012/04/14
The study of the formation of thin SOI structure by SIMOX with water plasma 期刊论文  OAI收割
MATERIALS ISSUES IN NOVEL SI-BASED TECHNOLOGY, 2002, 卷号: 686, 页码: 47-52
Jing,C; Meng,C; Xiang,W; Dong,YM; Zhihong,Z; Xi,W
收藏  |  浏览/下载:14/0  |  提交时间:2012/03/24
The new exploration for proton-implanted silicon: the conversion of a surface-region-purification-induced p-n junction into a p-i-n electrical structure approaching silicon on insulator 期刊论文  OAI收割
semiconductor science and technology, 2000, 卷号: 15, 期号: 2, 页码: l6-l9
Li JM
收藏  |  浏览/下载:47/0  |  提交时间:2010/08/12