中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
首页
机构
成果
学者
登录
注册
登陆
×
验证码:
换一张
忘记密码?
记住我
×
校外用户登录
CAS IR Grid
机构
国家天文台 [2]
地质与地球物理研究所 [1]
长春光学精密机械与物... [1]
采集方式
OAI收割 [4]
内容类型
期刊论文 [3]
会议论文 [1]
发表日期
2020 [3]
2005 [1]
学科主题
筛选
浏览/检索结果:
共4条,第1-4条
帮助
条数/页:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
排序方式:
请选择
题名升序
题名降序
提交时间升序
提交时间降序
作者升序
作者降序
发表日期升序
发表日期降序
Impact and Correction of Analytical Positioning on Accuracy of Zircon U-Pb Dating by SIMS
期刊论文
OAI收割
FRONTIERS IN CHEMISTRY, 2020, 卷号: 8, 页码: 8
作者:
Liu, Yu
;
Li, Qiu-Li
;
Ling, Xiao-Xiao
;
Tang, Guo-Qiang
;
Li, Jiao
  |  
收藏
  |  
浏览/下载:31/0
  |  
提交时间:2021/09/29
SIMS
zircon
U-Pb dating
positioning effect
metamorphic overgrowth
Applications of differential barometric altimeter in ground cellular communication positioning network
期刊论文
OAI收割
IET SCIENCE MEASUREMENT & TECHNOLOGY, 2020, 卷号: 14, 期号: 3, 页码: 322-331
作者:
Hu, Zhengqun
;
Zhang, Lirong
;
Ji, Yuanfa
  |  
收藏
  |  
浏览/下载:24/0
  |  
提交时间:2021/12/06
cellular radio
height measurement
measurement errors
Global Positioning System
altimeters
barometers
least squares approximations
Kalman filters
surface fitting
spread spectrum communication
compensation
matrix algebra
GPS
signal message structure
power spectrum
spread spectrum ranging signal
fitting parameters
least-square solution
calibration compensation
system noise variance matrix
measurement noise variance matrix
multibase station correction
height information correction calculation
DBA system
systematic performance
differential barometric altimeter
ground cellular communication positioning network
measurement datum distribution
altitude positioning error
Global Positioning System
differential barometric altimetry system
systematic implementation level
continuous altitude measurement
precise altitude measurement
DBA systematic implementation aspect
two dimensional curved surface fitting function
sensor measurement correction
filtering effect
Kalman filter
measuring station
multiBSs
navigation fusion
SIS accuracy and service performance of the BDS-3 basic system
期刊论文
OAI收割
SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY, 2020, 卷号: 63, 期号: 6, 页码: 12
作者:
  |  
收藏
  |  
浏览/下载:23/0
  |  
提交时间:2021/12/06
BDS-3
SIS URE
multipath effect
broadcast ephemeris
broadcast clock
ionospheric model
positioning accuracy
Study on LD-pumped Nd:YAG laser cutter (EI CONFERENCE)
会议论文
OAI收割
ICO20: Lasers and Laser Technologies, August 21, 2005 - August 26, 2005, Changchun, China
作者:
Zhang G.
;
Zhang G.
;
Zhang G.
;
Zhang J.
;
Zhang J.
收藏
  |  
浏览/下载:23/0
  |  
提交时间:2013/03/25
The theory of laser cutter and the technology neck is analyzed. We can conclude that it is almost impossible to deal with the waste thick silicon wafers which are yielded in producing silicon wafers by conventional eroding or diamond cutting
when the cutting velocity equals 100mm/min
while it is also unperfected with ecumenical laser cutter without good beam quality or precise laseroptics system. It is represented that high average power and high repetition rate laser with good beam quality and precise laseroptics system are pivotal to obtain excellent cutting effect such as thick groove depth
double-layer 0.75mm thick silicon wafer can be penetrated.. The cross section is fine and the groove is narrow
rapid cutting speed
the cutting quality meets the expecting demand.
fine kerf section without considering the effect of technique. Considering laser medium thermal lens effect and thermal focal length changing with pumping power
using plano-convex high reflectivity mirror as the back cavity mirror to compensate the heat lens influence
a /4 waveplate to compensate heat -induced birefraction
utilize the Nd:YAG self- aperture effect
more than 50 W average power 1.064 um IR output is obtained with beam quality factor (M2) equals 3.19. Through the LD-Pumped Nd:YAG laser cutter we developed with short focus length negative spherical aberration focusing lens
double axis linear step motor positioning system
suitable beam expander multiplying factor
appropriate diameter of exit beam aperture
proper repetition rate
when the cutting velocity equals 400mm/min
0.75mm thick silicon wafer can be penetrated