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• 长春光学精密机械与物... [5]
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• OAI收割 [18]
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• 期刊论文 [16]
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• 2018 [1]
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• Spectrosco... [1]
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浏览/检索结果: 共20条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 MOVPE-Growth of InGaSb/AlP/GaP(001) Quantum Dots for Nanoscale Memory Applications 期刊论文  OAI收割 Physica Status Solidi B-Basic Solid State Physics, 2018, 卷号: 255, 期号: 12, 页码: 7 作者:  Sala, E. M.;  Arikan, I. F.;  Bonato, L.;  Bertram, F.;  Veit, P.   |  收藏  |  浏览/下载：23/0  |  提交时间：2019/09/17 AlP barrier  GaP  InGaSb  MOVPE growth  nanoscale memory  quantum dots  hole localization  ohmic contacts  luminescence  resistance  Physics   Structural amelioration of 920 nm optically pumped semiconductor vertical external-cavity surface emitting laser (OPS-VECSEL) (EI CONFERENCE) 会议论文  OAI收割 2nd International Conference on Energy, Environment and Sustainable Development, EESD 2012, October 12, 2012 - October 14, 2012, Jilin, China 作者:  Liu Y.;  Liu Y. 收藏  |  浏览/下载：27/0  |  提交时间：2013/03/25 920 nm optically pumped semiconductor vertical external-cavity surface emitting laser (OPS-VECSEL) has an important application in laser display. We constructed and optimized a 920 nm OPS-VECSEL with active region of In0.09Ga0.91As quantum well (QW) system pumped by 808 nm laser diode module. By the finite element method  self-consistent solutions of the semiconductor electronic and optical equations are realized to calculate the characteristics parameters of OPS-VECSEL. The performances of device especially the mode  the threshold and the optical-optical translation efficiency were analyzed by dealing with different number of QWs (1  2 and 3) in one period  QW depth  barrier width  the component and dimension of the non-absorption layer. We chose an improved structure of them. On this basis  we ameliorated the number of QW periods and the simulation showed that in order to obtain high performance device  the choice of the number of QW periods must be cautious. (2013) Trans Tech Publications  Switzerland.   Wave-vector filtering effect of the electric-magnetic barrier in HgTe quantum wells 期刊论文  OAI收割 CHINESE PHYSICS B, 2013, 卷号: 22, 期号: 3 Zou, YL; Song, JT 收藏  |  浏览/下载：34/0  |  提交时间：2014/01/17 magnetic barrier  topological insulator  helical states  HgTe quantum well   A NEW BARRIER PENETRATION FORMULA AND ITS APPLICATION TO alpha-DECAY HALF-LIVES 期刊论文  OAI收割 INTERNATIONAL JOURNAL OF MODERN PHYSICS E-NUCLEAR PHYSICS, 2010, 卷号: 19, 页码: 359-370 作者:  Li, Lu-Lu;  Zhou, Shan-Gui;  Zhao, En-Guang;  Scheid, Werner   |  收藏  |  浏览/下载：21/0  |  提交时间：2018/05/31 Quantum tunneling  penetrability  alpha-decay  Coulomb barrier   Research on AlInGaN Quaternary Alloys as MQW Barriers in GaN-Based Laser Diodes 期刊论文  OAI收割 SPECTROSCOPY AND SPECTRAL ANALYSIS, 2009, 卷号: 29, 期号: 6, 页码: 1441-1444 作者:  Chen, WH;  Liao, H;  Hu, XD;  Li, R;  Jia, QJ 收藏  |  浏览/下载：21/0  |  提交时间：2016/06/29 GaN-based LD  Multi-quantum-well (MQW)  AlInGaN  Barrier material   Observation of Slow Magnetic Relaxation in Discrete Dysprosium Cubane 期刊论文  OAI收割 inorganic chemistry, 2009, 卷号: 48, 期号: 24, 页码: 11495-11497 Gao YJ; Xu GF; Zhao L; Tang JK; Liu ZL 收藏  |  浏览/下载：194/72  |  提交时间：2010/06/18 SINGLE-MOLECULE-MAGNET  HYDROXO-LANTHANIDE CLUSTERS  QUANTUM PHASE INTERFERENCE  HIGH-SPIN MOLECULES  COMPLEXES  BEHAVIOR  TRANSITION  HYSTERESIS  MANGANESE  BARRIER   Magneto-controlling quantum states of a single particle interacting with a square barrier 期刊论文  OAI收割 MODERN PHYSICS LETTERS B, 2008, 卷号: 22, 期号: 12, 页码: 1231-1241 作者:  Chen, Qiong;  Hai, Kuo;  Hai, Wenhua 收藏  |  浏览/下载：27/0  |  提交时间：2015/10/13 quantum wire  square barrier  magneto-controlling  quantum motional state   Temperature characteristics of several familiar diode lasers with broad area (EI CONFERENCE) 会议论文  OAI收割 Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008, Hangzhou, China 作者:  Wang L.;  Qin L.;  Wang L.;  Wang L. 收藏  |  浏览/下载：29/0  |  提交时间：2013/03/25 Temperature characteristics of several familiar high power diode lasers with broad area  whose wavelength was separately 808 nm  810 nm  940 nm and 980 nm  were analyzed. In order to see the effect the change of the quantum well structure on the characteristic temperatures  different structures were attempted. For the 808 nm structure  we tried different barrier thicknesses. For the 810 nm structure  different cavity lengths were attempted. And we studied the 940 nm and 980 nm also. In this paper  the widths of these devices were all 100 m. Characteristic temperatures of these devices were calculated. The appropriate structure was available for different application. 2008 SPIE.   Stability of gaas photocathodes under different intensities of illumination 期刊论文  iSwitch采集 Acta physica sinica, 2007, 卷号: 56, 期号: 10, 页码: 6109-6113 作者:  Zou Ji-Jun;  Chang Ben-Kang;  Yang Zhi;  Gao Pin;  Qiao Jian-Liang 收藏  |  浏览/下载：30/0  |  提交时间：2019/05/12 Gaas photocathode  Stability  Quantum efficiency  Surface potential barrier   The spectral feature analysis of semiconductor thin disk laser (EI CONFERENCE) 会议论文  OAI收割 Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007, Wuhan, China 作者:  Li J.;  Wang L.-J.;  Wang L.-J.;  Ning Y.-Q.;  Li J. 收藏  |  浏览/下载：30/0  |  提交时间：2013/03/25 The semiconductor thin disk laser is a new type of semiconductor laser. This work gives the basic operation function of semiconductor disk laser  and analyses the heat effect by the experimentally measured photoluminescence spectrum of the laser chip at different pump power and different temperature. We can see that: with increasing pump power  the thermal effects of the gain material becomes seriously and causes the saturation of carrier lifetime  so the electron-hole pair created in the absorbtion layer have no enough time to rate to one of the wells  and the non-radiative recombination happens in the barrier. When the thermal effects becomes stronger  the chip will not lasing. This phenomenon is from the smaller energy offset between barrier and quantum well. We optimize the original structure design and experimental technology. A non-absorbing AlGaAs layer who is transparent to the pumping and laser wavelength is added to confine the carriers in the quantum wells. At the same time a DBR with double reflecting band is induced to improve the absorbing efficiency of the pumping light. The single QW is replaced by the three narrow QWs  This three QWs structure can add the quantum state of QW  increase the recombination probability of carriers in the QWs and reduce the heat effect. The chemical etch equipment is also improved to control the surface unevenness to be within 50 nm.