机构

• 半导体研究所 [5]
• 物理研究所 [2]
• 长春光学精密机械与物... [1]

采集方式

• OAI收割 [8]

内容类型

• 期刊论文 [7]
• 会议论文 [1]

发表日期

• 2012 [1]
• 2006 [1]
• 2005 [1]
• 2001 [1]
• 2000 [1]
• 1998 [1]
• 更多

学科主题

• 半导体化学 [3]
• 半导体材料 [2]

筛选

浏览/检索结果: 共8条，第1-8条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Magnetic interlayer coupling between antiferromagnetic CoO and ferromagnetic Fe across a Ag spacer layer in epitaxially grown CoO/Ag/Fe/Ag(001) 期刊论文  OAI收割 PHYSICAL REVIEW B, 2012, 卷号: 85, 期号: 1 Meng, Y; Li, J; Glans, PA; Jenkins, CA; Arenholz, E; Tan, A; Gibbons, J; Park, JS; Hwang, C; Zhao, HW; Qiu, ZQ 收藏  |  浏览/下载：32/0  |  提交时间：2013/09/18 QUANTUM-WELL STATES  EXCHANGE-BIAS  FILMS  MODEL  INTERFACES  ANISOTROPY  SYSTEMS  FIELD   Self-consistent analysis of double-delta-doped InAlAs/InGaAs/InP HEMTs 期刊论文  OAI收割 chinese physics, 2006, 卷号: 15, 期号: 11, 页码: 2735-2741 Li DL (Li Dong-Lin); Zeng YP (Zeng Yi-Ping) 收藏  |  浏览/下载：42/0  |  提交时间：2010/04/11 two-dimensional electron gas  high electron mobility transistor  self-consistent calculation  InAlAs/InGaAs heterostructure  CHARGE CONTROL MODEL  ELECTRON-MOBILITY TRANSISTORS  PSEUDOMORPHIC INGAAS HEMT  FIELD-EFFECT TRANSISTOR  QUANTUM-WELL  ALGAAS/INGAAS PHEMTS  GATE RECESS  HIGH-SPEED  HETEROJUNCTION  CHANNEL   Theoretical analysis of 980nm high power Vertical External-cavity Surface-emitting Semiconductor Laser (VECSEL) (EI CONFERENCE) 会议论文  OAI收割 ICO20: Lasers and Laser Technologies, August 21, 2005 - August 26, 2005, Changchun, China 作者:  Wang L.-J.;  Wang L.-J.;  Ning Y.-Q.;  Qin L. 收藏  |  浏览/下载：23/0  |  提交时间：2013/03/25 By using bottom-emitting structure  we will develop laser diode (LD) pumped 980 nm VECSEL with active region of InGaAs/GaAsP/AlGaAs system. Because the thickness of barrier layer and absorption layer exceed that of quantum well  single well approximation model (KP method) can be used to calculate the band structure of VECSEL. The Schrodinger equation of finite deep potential well can be adopted to calculate the energy level structures of electron  heavy and light holes. According to the transition selection rule  we theoretically obtained the emitting wavelength of VECSEL and calculated quasi-Femi energy of valence band and conduction band based on the analysis of energy level structure of electron and holes. By analyzing the gain of strained quantum wells  we calculated the gain of VECSEL using transition matrix elements of electron  heavy and light holes. We give out the threshold gain  output power and other characteristic parameters. We will study the configuration of VECSEL and pumping scheme. We designed external cavity mirror  active region and bottom-emitting structure. A LD-pumped vertical external cavity surface-emitting laser whose output power is greater than 1.0 W can be predicted.   Electrolyte electroreflectance spectroscopy studies on the interfacial behavior of the near-surface In0.15Ga0.85As/GaAs quantum well electrode vertical bar non-aqueous electrolyte 期刊论文  OAI收割 journal of electroanalytical chemistry, 2001, 卷号: 502, 期号: 1-2, 页码: 191-196 Liu Y; Xiao XR; Zeng YP 收藏  |  浏览/下载：173/12  |  提交时间：2010/08/12 photoelectrochemistry  electrolyte electroreflectance spectroscopy  quantum well electrodes  interfaces  tunneling  MATCHED SUPERLATTICE ELECTRODES  PHOTOCURRENT SPECTROSCOPY  PHOTOREFLECTANCE SPECTROSCOPY  EER SPECTRA  LINE-SHAPE  GAAS  SEMICONDUCTOR  MODEL  ELECTRODE/ELECTROLYTE  PHOTOELECTROCHEMISTRY   A study on strong room temperature photoluminescence of a-SiNx : H films 期刊论文  OAI收割 materials letters, 2000, 卷号: 44, 期号: 2, 页码: 87-90 Wang Y; Yue RF; Li GH; Liao XB; Wang YQ; Diao HW; Kong GL 收藏  |  浏览/下载：56/0  |  提交时间：2010/08/12 a-SiNx : H alloys  photuluminescence  percolation theory  quantum well model  PECVD  HYDROGENATED AMORPHOUS-SILICON  VISIBLE PHOTOLUMINESCENCE  POROUS SILICON   Electron-phonon scattering in an asymmetric double barrier resonant tunneling structure 期刊论文  OAI收割 EUROPEAN PHYSICAL JOURNAL B, 1998, 卷号: 4, 期号: 1, 页码: 113 Shi, JJ; Sanders, BC; Pan, SH 收藏  |  浏览/下载：22/0  |  提交时间：2013/09/17 QUANTUM-WELL STRUCTURES  THICKNESS ASYMMETRIES  MAGNETIC-FIELD  DIODES  HETEROSTRUCTURES  OSCILLATIONS  TEMPERATURE  EMISSION  MODEL   Interfacial behaviour of a quantum well electrode/electrolyte: EER spectra of an SQW GaAs/AlxGa1-xAs electrode in HQ+BQ non-aqueous electrolyte 期刊论文  OAI收割 journal of electroanalytical chemistry, 1997, 卷号: 430, 期号: 1-2, 页码: 91-95 Liu Y; Xiao XR; Wang RZ; Li DL; Zeng YP; Yang CH; Sun DZ 收藏  |  浏览/下载：65/0  |  提交时间：2010/08/12 quantum well electrode  GaAs  stark effect  Franz-Keldysh oscillation  electrolyte electroreflectance spectroscopy  interfacial behaviour  LINE-SHAPE  PHOTOREFLECTANCE  GAAS  SPECTROSCOPY  STATES  HETEROSTRUCTURES  SUPERLATTICES  MECHANISMS  MODEL  ELECTROREFLECTANCE SPECTRA   Interfacial behaviour of quantum well electrode/electrolyte: effect of redox species on EER spectra of a single quantum well GaAs vertical bar AlxGa1-xAs electrode 期刊论文  OAI收割 journal of electroanalytical chemistry, 1997, 卷号: 429, 期号: 0, 页码: 55-60 Liu Y; Xiao XR; Wang RZ; Li DL; Zeng YP; Yang CH; Sun DZ 收藏  |  浏览/下载：18/0  |  提交时间：2010/11/17 quantum well electrode  interface behaviour  GaAs  AlGaAs  non-aqueous electrolytes  EER spectroscopy  PHOTOREFLECTANCE SPECTROSCOPY  ELECTROREFLECTANCE SPECTRA  PHOTOCURRENT SPECTROSCOPY  SUPERLATTICE ELECTRODES  LINE-SHAPE  SEMICONDUCTOR  SURFACE  MODEL  PHOTOLUMINESCENCE  MECHANISMS