中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
半导体研究所 [6]
采集方式
iSwitch采集 [3]
OAI收割 [3]
内容类型
期刊论文 [6]
发表日期
2006 [6]
学科主题
光电子学 [2]
半导体材料 [1]
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High-quality multiple quantum wells selectively grown with tapered masks by ultra-low-pressure mocvd
期刊论文
iSwitch采集
Optical materials, 2006, 卷号: 28, 期号: 8-9, 页码: 1037-1040
作者:
Zhao, Q
;
Pan, JQ
;
Zhang, J
;
Wang, W
收藏
  |  
浏览/下载:27/0
  |  
提交时间:2019/05/12
Selective-area growth
Ultra-low-pressure
Metal-organic chemical vapor deposition
Tapered mask
Photoluminescence
High-quality multiple quantum wells selectively grown on taper-patterned substrates by ultra-low-pressure mocvd
期刊论文
iSwitch采集
Acta physica sinica, 2006, 卷号: 55, 期号: 6, 页码: 2982-2985
作者:
Zhao, Q
;
Pan, JQ
;
Zhang, J
;
Zhou, F
;
Wang, BJ
收藏
  |  
浏览/下载:26/0
  |  
提交时间:2019/05/12
Ultra-low-pressure
Selective area growth
Tapered mask
High-performance eml grown on taper-masked pattern substrates by ultra-low-pressure mocvd
期刊论文
iSwitch采集
Journal of crystal growth, 2006, 卷号: 288, 期号: 1, 页码: 27-31
作者:
Zhao, Q
;
Pan, JQ
;
Zhang, J
;
Zhu, HL
;
Wang, W
收藏
  |  
浏览/下载:24/0
  |  
提交时间:2019/05/12
Selective area growth
Ultra-low pressure
Ingaasp
Tapered mask
Integrated device
High-quality multiple quantum wells selectively grown with tapered masks by ultra-low-pressure MOCVD
期刊论文
OAI收割
optical materials, 2006, 卷号: 28, 期号: 8-9, 页码: 1037-1040
作者:
Pan JQ
收藏
  |  
浏览/下载:71/0
  |  
提交时间:2010/04/11
selective-area growth
ultra-low-pressure
metal-organic chemical vapor deposition
tapered mask
photoluminescence
BANDGAP ENERGY CONTROL
INTEGRATED DFB LASER
EPITAXY
High-performance EML grown on taper-masked pattern substrates by ultra-low-pressure MOCVD
期刊论文
OAI收割
journal of crystal growth, 2006, 卷号: 288, 期号: 1, 页码: 27-31
作者:
Pan JQ
收藏
  |  
浏览/下载:82/0
  |  
提交时间:2010/04/11
selective area growth
ultra-low pressure
InGaAsP
tapered mask
integrated device
BURIED-HETEROSTRUCTURE
MONOLITHIC INTEGRATION
SELECTIVE MOVPE
LASER
MODULATOR
High-quality multiple quantum wells selectively grown on taper-patterned substrates by ultra-low-pressure MOCVD
期刊论文
OAI收割
acta physica sinica, 2006, 卷号: 55, 期号: 6, 页码: 2982-2985
作者:
Pan JQ
收藏
  |  
浏览/下载:40/0
  |  
提交时间:2010/04/11
ultra-low-pressure
selective area growth
tapered mask
BANDGAP ENERGY CONTROL
INTEGRATED DFB LASER
EPITAXY