机构

• 新疆理化技术研究所 [10]
• 近代物理研究所 [3]
• 新疆生态与地理研究所 [1]
• 上海微系统与信息技术... [1]
• 高能物理研究所 [1]
• 合肥物质科学研究院 [1]
• 更多

采集方式

• OAI收割 [17]

内容类型

• 期刊论文 [17]

发表日期

• 2022 [1]
• 2021 [1]
• 2019 [4]
• 2018 [3]
• 2016 [3]
• 2015 [1]
• 更多

学科主题

• Physics [2]
• Engineerin... [1]

筛选

浏览/检索结果: 共17条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Influence of doubly-hydrogenated oxygen vacancy on the TID effect of MOS devices 期刊论文  OAI收割 FRONTIERS IN MATERIALS, 2022, 卷号: 9 作者:  Lu, Guangbao;  Liu, Jun;  Zheng, Qirong;  Li, Yonggang   |  收藏  |  浏览/下载：45/0  |  提交时间：2022/12/23 total ionizing dose effect  dynamic modeling  doubly-hydrogenated oxygen vacancy  microscopic mechanism  MOS devices   Radiation Effects and Mechanisms on Switching Characteristics of Silicon Carbide Power MOSFETs 期刊论文  OAI收割 JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2021, 卷号: 16, 期号: 9, 页码: 1423-1429 作者:  Feng, HN (Feng, Haonan) [1] , [2] , [3];  Yang, S (Yang, Sheng) [1] , [2] , [3];  Liang, XW (Liang, Xiaowen) [1] , [2] , [3];  Zhang, D (Zhang, Dan) [1] , [2] , [3];  Pu, XJ (Pu, Xiaojuan) [1] , [2] , [3]   |  收藏  |  浏览/下载：44/0  |  提交时间：2022/03/24 SiC Power MOSFETs  Switching Characteristics  Total Ionizing Dose (TID) Effect  Static Characteristic  Parasitic Capacitance   Effects of total ionizing dose on single event effect sensitivity of FRAMs 期刊论文  OAI收割 MICROELECTRONICS RELIABILITY, 2019, 卷号: 95, 页码: 1-7 作者:  Ji, Qinggang;  Liu, Jie;  Li, Dongqing;  Liu, Tianqi;  Ye, Bing   |  收藏  |  浏览/下载：59/0  |  提交时间：2019/11/10 Ferroelectric random access memory  Total ionizing dose  Single event effect  TCAD simulation   A study on effects of total ionizing dose on hot carrier effect of PD I/O SOI PMOSFETs 期刊论文  OAI收割 RESULTS IN PHYSICS, 2019, 卷号: 13, 期号: 6, 页码: 1-5 作者:  Zhao, JH (Zhao, Jinghao)[ 1,2,3 ];  Zheng, QW (Zheng, Qiwen)[ 1,2 ]   |  收藏  |  浏览/下载：9/0  |  提交时间：2020/03/20 Hot carrier effect  PMOS  Total ionizing dose effect   Mechanism of Degradation Rate on the Irradiated Double-Polysilicon Self-Aligned Bipolar Transistor 期刊论文  OAI收割 ELECTRONICS, 2019, 卷号: 8, 期号: 6, 页码: 1-8 作者:  Liu, MH (Liu, Mohan)[ 1,2 ];  Lu, W (Lu, Wu)[ 1 ];  Yu, X (Yu, Xin)[ 1,2 ];  Wang, X (Wang, Xin)[ 1 ];  Li, XL (Li, Xiaolong)[ 1 ]   |  收藏  |  浏览/下载：25/0  |  提交时间：2020/04/03 saturation effect  gain degradation  total ionizing dose  gamma ray  bipolar transistor   Influences of total ionizing dose on single event effect sensitivity in floating gate cells 期刊论文  OAI收割 CHINESE PHYSICS B, 2018, 卷号: 27, 期号: 8, 页码: 086103 作者:  Zhao, Pei-Xiong;  Liu, Tian-Qi;  Ye, Bing;  Luo, Jie;  Sun, You-Mei   |  收藏  |  浏览/下载：44/0  |  提交时间：2018/10/08 flash memories  heavy ions  synergistic effect  total ionizing dose   Synergistic effect of total ionizing dose on single event effect induced by pulsed laser microbeam on SiGe heterojunction bipolar transistor 期刊论文  OAI收割 CHINESE PHYSICS B, 2018, 卷号: 27, 期号: 10, 页码: 1-10 作者:  Zhang, JX (Zhang, Jin-Xin)[ 1 ];  Guo, HX (Guo, Hong-Xia)[ 2,3 ];  Pan, XY (Pan, Xiao-Yu)[ 3 ];  Guo, Q (Guo, Qi)[ 2 ];  Zhang, FQ (Zhang, Feng-Qi)[ 3 ]   |  收藏  |  浏览/下载：47/0  |  提交时间：2018/11/20 Sige Hbt  Synergistic Effect  Single Event Effects  Total Ionizing Dose   Total ionizing dose and synergistic effects of magnetoresistive random-access memory 期刊论文  OAI收割 NUCLEAR SCIENCE AND TECHNIQUES, 2018, 卷号: 29, 期号: 8, 页码: 1-5 作者:  Zhang, XY (Zhang, Xing-Yao);  Guo, Q (Guo, Qi);  Li, YD (Li, Yu-Dong);  Wen, L (Wen, Lin);  Zhang, XY   |  收藏  |  浏览/下载：22/0  |  提交时间：2018/08/07 Magnetoresistive Random-access Memory Total Ionizing Dose  Synergistic Effect   Dose-rate sensitivity of deep sub-micro complementary metal oxide semiconductor process 期刊论文  OAI收割 ACTA PHYSICA SINICA, 2016, 卷号: 65, 期号: 7 作者:  Zheng, QW (Zheng Qi-Wen);  Cui, JW (Cui Jiang-Wei);  Wang, HN (Wang Han-Ning);  Zhou, H (Zhou Hang);  Yu, DZ (Yu De-Zhao) 收藏  |  浏览/下载：28/0  |  提交时间：2016/12/12 total ionizing dose effects  deep sub-micron  metal oxide semiconductor field effect transistor  static random access memory