机构

• 半导体研究所 [22]
• 金属研究所 [4]
• 高能物理研究所 [4]
• 苏州纳米技术与纳米仿... [3]
• 长春光学精密机械与物... [3]
• 力学研究所 [2]
• 更多

采集方式

• OAI收割 [27]
• iSwitch采集 [14]

内容类型

• 期刊论文 [39]
• 会议论文 [2]

发表日期

• 2019 [2]
• 2018 [2]
• 2016 [1]
• 2011 [2]
• 2010 [6]
• 2009 [21]
• 更多

学科主题

• 半导体物理 [6]
• 半导体材料 [5]
• Physics [2]

筛选

浏览/检索结果: 共41条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 High quality 2-m GaSb-based optically pumped semiconductor disk laser grown by molecular beam epitaxy 期刊论文  OAI收割 Chinese Physics B, 2019, 卷号: 28, 期号: 3 作者:  J.-M.Shang;  J.Feng;  C.-A.Yang;  S.-W.Xie;  Y.Zhang   |  收藏  |  浏览/下载：31/0  |  提交时间：2020/08/24 Gallium compounds,Antimony compounds,III-V semiconductors,Molecular beam epitaxy,Molecular beams,Optically pumped lasers,Pumping (laser),Quantum well lasers,Semiconductor quantum wells,Silicon carbide,Silicon compounds,Tellurium compounds,Wide band gap semiconductors   Point defects: key issues for -oxides wide-bandgap semiconductors development 期刊论文  OAI收割 Wuli Xuebao/Acta Physica Sinica, 2019, 卷号: 68, 期号: 16 作者:  X.-H.Xie;  B.-H.Li;  Z.-Z.Zhang;  L.Liu;  K.-W.Liu   |  收藏  |  浏览/下载：45/0  |  提交时间：2020/08/24 Wide band gap semiconductors,Arc lamps,Beryllia,Binding energy,Doping (additives),Electroluminescence,Energy gap,II-VI semiconductors,Ionization of gases,Ionization potential,Magnesia,Magnetic semiconductors,Point defects,Semiconductor doping,Semiconductor lasers,Semiconductor quantum wells,Ultraviolet lasers,Zinc oxide   Crystal imperfection modulation engineering for functionalization of wide band gap semiconductor radiation detector 期刊论文  iSwitch采集 Advanced electronic materials, 2018, 卷号: 4, 期号: 2, 页码: 8 作者:  Ji, Xu;  Chen, Liang;  Xu, Mengxuan;  Dong, Mei;  Yan, Kun 收藏  |  浏览/下载：62/0  |  提交时间：2019/04/23 Crystal imperfection modulation engineering  Electrochemical doping  H elimination  Wide band gap semiconductor  Zno   Crystal Imperfection Modulation Engineering for Functionalization of Wide Band Gap Semiconductor Radiation Detector 期刊论文  OAI收割 ADVANCED ELECTRONIC MATERIALS, 2018, 卷号: 4, 期号: 2, 页码: 1700307 作者:  Xu, MX;  Dong, M;  Yan, K;  Wang, TY;  Liu, JD   |  收藏  |  浏览/下载：31/0  |  提交时间：2019/09/24 crystal imperfection modulation engineering  electrochemical doping  H elimination  wide band gap semiconductor  ZnO   Two-dimensional wide-band-gap ii–v semiconductors with a dilated graphene-like structure 期刊论文  iSwitch采集 Semiconductor science and technology, 2016, 卷号: 31, 期号: 12 作者:  Zhang,Xue-Jing;  Liu,Bang-Gui 收藏  |  浏览/下载：50/0  |  提交时间：2019/05/09 Two-dimensional semiconductor  Wide band gap  First-principles calculation  68.65.-k  73.22.-f  78.67.-n   Effect of transverse electric field on helical edge states in a quantum spin-hall system 期刊论文  iSwitch采集 Applied physics letters, 2011, 卷号: 99, 期号: 22, 页码: 3 作者:  Liu, Genhua;  Zhou, Guanghui;  Chen, Yong-Hai 收藏  |  浏览/下载：36/0  |  提交时间：2019/05/12 Cadmium compounds  Ii-vi semiconductors  Mercury compounds  Quantum hall effect  Semiconductor quantum wells  Spin hall effect  Wide band gap semiconductors   Room temperature GaN/AlGaN self-mixing terahertz detector enhanced by resonant antennas 期刊论文  OAI收割 APPLIED PHYSICS LETTERS, 2011, 卷号: 98, 期号: 25 作者:  Sun, YF (孙云飞);  Sun, JD (孙建东);  Zhou, Y (周宇);  Tan, RB (谭仁兵);  Zeng, CH (曾春红) 收藏  |  浏览/下载：43/0  |  提交时间：2012/08/24 aluminium compounds  gallium compounds  high electron mobility transistors  III-V semiconductors  photoconductivity  photodetectors  semiconductor device noise  terahertz wave detectors  wide band gap semiconductors   Analysis of surface roughness in Ti/Al/Ni/Au Ohmic contact to AlGaN/GaN high electron mobility transistors 期刊论文  OAI收割 Applied Physics Letters, 2010, 期号: 6 作者:  Zhang BS (张宝顺);  Cai Y (蔡勇) 收藏  |  浏览/下载：209/64  |  提交时间：2010/12/31 aggregation  aluminium  aluminium compounds  gallium compounds  gold  high electron mobility transistors  III-V semiconductors  nickel  ohmic contacts  rapid thermal annealing  semiconductor-metal boundaries  surface morphology  surface roughness  titanium  transmission electron microscopy  wide band gap semiconductors  X-ray chemical analysis   Three-dimensional hole gas induced by polarization in (0001)-oriented metal-face iii-nitride structure 期刊论文  iSwitch采集 Applied physics letters, 2010, 卷号: 97, 期号: 6, 页码: 3 作者:  Zhang, L.;  Ding, K.;  Yan, J. C. 收藏  |  浏览/下载：34/0  |  提交时间：2019/05/12 Aluminium compounds  Electron gas  Gallium compounds  Iii-v semiconductors  Mocvd  Polarisation  Semiconductor doping  Semiconductor thin films  Wide band gap semiconductors   Strong circular photogalvanic effect in zno epitaxial films 期刊论文  iSwitch采集 Applied physics letters, 2010, 卷号: 97, 期号: 4, 页码: 3 作者:  Zhang, Q.;  Wang, X. Q.;  Yin, C. M.;  Xu, F. J.;  Tang, N. 收藏  |  浏览/下载：26/0  |  提交时间：2019/05/12 Ii-vi semiconductors  Photoconductivity  Photovoltaic effects  Semiconductor epitaxial layers  Spin-orbit interactions  Valence bands  Wide band gap semiconductors  Zinc compounds