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Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
半导体研究所 [28]
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OAI收割 [28]
内容类型
期刊论文 [27]
会议论文 [1]
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2011 [1]
2010 [1]
2009 [1]
2008 [3]
2006 [4]
2005 [1]
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学科主题
半导体物理 [28]
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Photoluminescence of CdSe nanowires grown with and without metal catalyst
期刊论文
OAI收割
nano research, NANO RESEARCH, 2011, 2011, 卷号: 4, 4, 期号: 4, 页码: 343-359, 343-359
作者:
Fasoli A
;
Colli A
;
Martelli F
;
Pisana S
;
Tan PH
  |  
收藏
  |  
浏览/下载:52/5
  |  
提交时间:2011/07/05
CdSe
nanowires
photoluminescence
CHEMICAL-VAPOR-DEPOSITION
SHAPE-SELECTIVE SYNTHESIS
LIQUID-SOLID MECHANISM
OPTICAL-PROPERTIES
SILICON NANOWIRES
SI NANOWIRES
ZNSE NANOWIRES
SEMICONDUCTOR NANOCRYSTALS
STRUCTURAL-PROPERTIES
EPITAXIAL-GROWTH
Cdse
Nanowires
Photoluminescence
Chemical-vapor-deposition
Shape-selective Synthesis
Liquid-solid Mechanism
Optical-properties
Silicon Nanowires
Si Nanowires
Znse Nanowires
Semiconductor Nanocrystals
Structural-properties
Epitaxial-growth
Defects in gallium nitride nanowires: First principles calculations
期刊论文
OAI收割
journal of applied physics, JOURNAL OF APPLIED PHYSICS, 2010, 2010, 卷号: 108, 108, 期号: 4, 页码: art. no. 044305, Art. No. 044305
作者:
Wang ZG (Wang Zhiguo)
;
Li JB (Li Jingbo)
;
Gao F (Gao Fei)
;
Weber WJ (Weber William J.)
;
Wang, ZG, Univ Elect Sci & Technol China, Dept Appl Phys, Chengdu 610054, Peoples R China. E-mail Address: zgwang@uestc.edu.cn
  |  
收藏
  |  
浏览/下载:105/1
  |  
提交时间:2010/10/11
CHEMICAL-VAPOR-DEPOSITION
Chemical-vapor-deposition
Gan Nanowires
Native Defects
Complexes
Epitaxy
Growth
Arrays
GAN NANOWIRES
NATIVE DEFECTS
COMPLEXES
EPITAXY
GROWTH
ARRAYS
Low-temperature magnetotransport behaviors of heavily Mn-doped (Ga,Mn)As films with high ferromagnetic transition temperature
期刊论文
OAI收割
applied physics letters, 2009, 卷号: 95, 期号: 18, 页码: art.no.182505
作者:
Chen L
;
Qian X
收藏
  |  
浏览/下载:84/39
  |  
提交时间:2010/03/08
annealing
Nitrogen defects and ferromagnetism in Cr-doped dilute magnetic semiconductor AlN from first principles
期刊论文
OAI收割
physical review b, 2008, 卷号: 78, 期号: 19, 页码: art. no. 195206
Shi LJ
;
Zhu LF
;
Zhao YH
;
Liu BG
收藏
  |  
浏览/下载:217/56
  |  
提交时间:2010/03/08
ab initio calculations
aluminium compounds
annealing
band structure
chromium
Curie temperature
density functional theory
exchange interactions (electron)
ferromagnetic materials
III-V semiconductors
semimagnetic semiconductors
total energy
vacancies (crystal)
Long-wavelength light emission from self-assembled heterojunction quantum dots
期刊论文
OAI收割
journal of applied physics, 2008, 卷号: 103, 期号: 9, 页码: art. no. 094315
Zhou, ZQ
;
Xu, YQ
;
Hao, RT
;
Tang, B
;
Ren, ZW
;
Niu, ZC
收藏
  |  
浏览/下载:43/4
  |  
提交时间:2010/03/08
MU-M
GAAS
GROWTH
EPITAXY
Synthesis and characterization of ZnO nanoflowers grown on AIN films by solution deposition
期刊论文
OAI收割
chinese physics letters, 2008, 卷号: 25, 期号: 2, 页码: 640-643
Gao, HY
;
Yan, FW
;
Zhang, Y
;
Li, JM
;
Zeng, YP
收藏
  |  
浏览/下载:51/4
  |  
提交时间:2010/03/08
CHEMICAL-VAPOR-DEPOSITION
NANORODS
MECHANISM
NANOWIRES
Deep level transient spectroscopy studies of Er and Pr implanted GaN films
期刊论文
OAI收割
acta physica sinica, 2006, 卷号: 55, 期号: 3, 页码: 1407-1412
Song SF
;
Chen WD
;
Xu ZJ
;
Xu XR
收藏
  |  
浏览/下载:45/0
  |  
提交时间:2010/04/11
GaN
Er
Pr-implautation
deep level transient spectroscopy
N-TYPE GAN
DEFECTS
EPITAXY
TRAPS
As-doped p-type ZnO films by sputtering and thermal diffusion process
期刊论文
OAI收割
journal of applied physics, 2006, 卷号: 100, 期号: 4, 页码: art.no.043704
Wang P (Wang Peng)
;
Chen NF (Chen Nuofu)
;
Yin ZG (Yin Zhigang)
;
Yang F (Yang Fei)
;
Peng CT (Peng Changtao)
;
Dai RX (Dai Ruixuan)
;
Bai YM (Bai Yiming)
收藏
  |  
浏览/下载:38/0
  |  
提交时间:2010/04/11
RAY-PHOTOELECTRON-SPECTROSCOPY
INAS SURFACES
FABRICATION
DEPOSITION
LAYERS
OXIDE
Enhancement of photoluminescence intensity of GaInNAs/GaAs quantum wells by two-step rapid thermal annealing
期刊论文
OAI收割
chinese physics letters, 2006, 卷号: 23, 期号: 9, 页码: 2579-2582
Zhao H (Zhao Huan)
;
Xu YQ (Xu Ying-Qiang)
;
Ni HQ (Ni Hai-Qiao)
;
Han Q (Han Qin)
;
Wu RH (Wu Rong-Han)
;
Niu ZC (Niu Zhi-Chuan)
收藏
  |  
浏览/下载:41/0
  |  
提交时间:2010/04/11
MOLECULAR-BEAM EPITAXY
IMPROVED LUMINESCENCE EFFICIENCY
ORIGIN
Corrugated surfaces formed on GaAs(331)A substrates: the template for laterally ordered InGaAs nanowires
期刊论文
OAI收割
nanotechnology, 2006, 卷号: 17, 期号: 4, 页码: 1140-1145
Gong Z
;
Niu ZC
;
Fang ZD
收藏
  |  
浏览/下载:72/0
  |  
提交时间:2010/04/11
MOLECULAR-BEAM EPITAXY
QUANTUM-DOT SUPERLATTICES
VICINAL GAAS(001)
GAAS
WIRES
POLARIZATION
GROWTH
WELLS
TEMPERATURE
MECHANISM