机构

• 半导体研究所 [11]

采集方式

• OAI收割 [11]

内容类型

• 期刊论文 [10]
• 会议论文 [1]

发表日期

• 2011 [1]
• 2010 [1]
• 2009 [2]
• 2008 [3]
• 2007 [1]
• 2006 [2]
• 更多

学科主题

• 光电子学 [11]

筛选

浏览/检索结果: 共11条，第1-10条 帮助 限定条件 学科主题：光电子学     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序题名升序题名降序作者升序作者降序发表日期升序发表日期降序 The investigation on carrier distribution in InGaN/GaN multiple quantum well layers 期刊论文  OAI收割 journal of applied physics, 2011, 卷号: 109, 期号: 9, 页码: article no.93117 作者:  Yang H;  Zhu JH;  Wang H;  Zhang SM;  Yang H 收藏  |  浏览/下载：48/3  |  提交时间：2011/07/05 DIODES  EFFICIENCY   Optical properties of InN rods on sapphire grown by metal-organic chemical vapor deposition 期刊论文  OAI收割 physica e-low-dimensional systems & nanostructures, 2010, 卷号: 43, 期号: 1, 页码: 138-141 作者:  Zhang SM 收藏  |  浏览/下载：58/1  |  提交时间：2011/07/05 BAND-GAP  INDIUM NITRIDE  TRANSPORT  EMISSION   The influence of growth temperature and input V/III ratio on the initial nucleation and material properties of InN on GaN by MOCVD 期刊论文  OAI收割 semiconductor science and technology, 2009, 卷号: 24, 期号: 5, 页码: art. no. 055001 作者:  Yang H;  Jiang DS;  Zhao DG;  Zhang SM;  Yang H 收藏  |  浏览/下载：88/41  |  提交时间：2010/03/08 MOLECULAR-BEAM EPITAXY  ELECTRON-TRANSPORT  BAND-GAP  FILMS  SAPPHIRE   Suppression of indium droplet formation by adding CCl4 during metalorganic chemical vapor deposition growth of InN films 期刊论文  OAI收割 semiconductor science and technology, 2009, 卷号: 24, 期号: 7, 页码: art. no. 075004 作者:  Wang H;  Yang H;  Yang H;  Zhao DG;  Wang YT 收藏  |  浏览/下载：47/1  |  提交时间：2010/03/08 ELECTRON-TRANSPORT  PHASE EPITAXY  NITRIDE INN  BAND-GAP   Geometric phase of a bipartite system with Dzyaloshinski-Moriya interaction 期刊论文  OAI收割 optics communications, 2008, 卷号: 281, 期号: 20, 页码: 5278-5281 Zhou, Y; Zhang, GF 收藏  |  浏览/下载：16/0  |  提交时间：2010/03/08 Berry phase  Heisenberg XXZ chain  DM interaction   Fabrication and transport properties of ZnO/Nb-1 wt %-doped SrTiO3 epitaxial heterojunctions 期刊论文  OAI收割 applied physics letters, 2008, 卷号: 92, 期号: 1, 页码: art. no. 012115 Wu, YL; Zhang, LW; Xie, GL; Zhu, JL; Chen, YH 收藏  |  浏览/下载：63/3  |  提交时间：2010/03/08 MANGANITE-BASED HETEROJUNCTION  SCHOTTKY CONTACTS  TUNNELING CURRENT  ZNO   Native deep level defects in ZnO single crystal grown by CVT method - art. no. 68410I 会议论文  OAI收割 conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007 Zhao, YW; Zhang, F; Zhang, R; Dong, ZY; Wei, XC; Zeng, YP; Li, JM 收藏  |  浏览/下载：43/0  |  提交时间：2010/03/09 zinc oxide  defect  vacancy   Effect of heavy boron doping on the electrical characteristics of SiGeHBTs 期刊论文  OAI收割 semiconductor science and technology, 2007, 卷号: 22, 期号: 8, 页码: 890-895 Yao F (Yao Fei); Xue CL (Xue Chun-Lai); Cheng BW (Cheng Bu-Wen); Wang QM (Wang Qi-Ming) 收藏  |  浏览/下载：73/0  |  提交时间：2010/03/29 HETEROJUNCTION BIPOLAR-TRANSISTORS   Effects of grain size on the mosaic tilt and twist in InN films grown on GaN by metal-organic chemical vapor deposition 期刊论文  OAI收割 applied physics letters, 2006, 卷号: 89, 期号: 9, 页码: art.no.092114 Wang H (Wang H.); Huang Y (Huang Y.); Sun Q (Sun Q.); Chen J (Chen J.); Wang LL (Wang L. L.); Zhu JJ (Zhu J. J.); Zhao DG (Zhao D. G.); Zhang SM (Zhang S. M.); Jiang DS (Jiang D. S.); Wang YT (Wang Y. T.); Yang H (Yang H.) 收藏  |  浏览/下载：42/0  |  提交时间：2010/04/11 X-RAY-DIFFRACTION  ELECTRON-TRANSPORT  EPITAXIAL GAN  BAND-GAP  DISLOCATIONS  SAPPHIRE  ALN   Evolution of mosaic structure in InN grown by metalorganic chemical vapor deposition 期刊论文  OAI收割 journal of crystal growth, 2006, 卷号: 293, 期号: 2, 页码: 269-272 Huang Y (Huang Y.); Wang H (Wang H.); Sun Q (Sun Q.); Chen J (Chen J.); Li DY (Li D. Y.); Zhang JC (Zhang J. C.); Wang JF (Wang J. F.); Wang YT (Wang Y. T.); Yang H (Yang H.) 收藏  |  浏览/下载：48/0  |  提交时间：2010/04/11 growth mode  X-ray diffraction  metalorganic chemical vapor deposition  indium nitride  X-RAY-DIFFRACTION  THREADING DISLOCATIONS  ELECTRON-TRANSPORT  BUFFER LAYER  THIN-FILMS  GAN FILMS  SAPPHIRE  ALN