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Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
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半导体研究所 [52]
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OAI收割 [52]
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期刊论文 [49]
会议论文 [3]
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2013 [1]
2011 [4]
2010 [3]
2009 [1]
2007 [2]
2006 [3]
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学科主题
半导体材料 [52]
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In situ accurate control of 2D-3D transition parameters for growth of low-density InAs/GaAs self-assembled quantum dots
期刊论文
OAI收割
nanoscale research letters, Nanoscale Research Letters, 2013, 2013, 卷号: 8, 8, 期号: 1, 页码: 86, 86
作者:
Li MF(李密锋)
  |  
收藏
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浏览/下载:10/0
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提交时间:2013/06/03
InAs quantum dots
Sacrificed InAs layer
Molecular beam epitaxy
Reflection high-energy electron
Inas Quantum Dots
Sacrificed Inas Layer
Molecular Beam Epitaxy
Reflection High-energy Electron
Anomalous Temperature Dependence of Photoluminescence in InAs/InAlGaAs/InP Quantum Wire and Dot Hybrid Nanostructures
期刊论文
OAI收割
chinese physics letters, 2011, 卷号: 28, 期号: 2, 页码: article no.27801
作者:
Xu B
收藏
  |  
浏览/下载:51/3
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提交时间:2011/07/05
CONTINUOUS-WAVE OPERATION
EMISSION
LASERS
WAVELENGTH
EXCITONS
ENERGY
Redshift and discrete energy level separation of self-assembled quantum dots induced by strain-reducing layer
期刊论文
OAI收割
journal of applied physics, 2011, 卷号: 109, 期号: 6, 页码: article no.64320
作者:
Yang T
收藏
  |  
浏览/下载:53/5
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提交时间:2011/07/05
PHOTOLUMINESCENCE
EMISSION
INALAS
Study of molecular-beam epitaxy growth on patterned GaAs (1 0 0) substrates by masked indium ion implantation
期刊论文
OAI收割
journal of crystal growth, 2011, 卷号: 318, 期号: 1, 页码: 572-575
作者:
Xu B
;
Jin P
;
Ye XL
收藏
  |  
浏览/下载:63/1
  |  
提交时间:2011/07/05
Atom force microscopy
Nanostructures
Molecular-beam epitaxy
Nanomaterials
Semiconducting gallium arsenide
QUANTUM-DOTS
ANODIC ALUMINA
ARRAYS
PLACEMENT
INAS
Growth Simulations of Self-Assembled Nanowires on Stepped Substrates
期刊论文
OAI收割
ieee journal of selected topics in quantum electronics, 2011, 卷号: 17, 期号: 4, 页码: 960-965
Liang S
;
Kong DH
;
Zhu HL
;
Wang W
收藏
  |  
浏览/下载:26/0
  |  
提交时间:2012/02/06
CHEMICAL-VAPOR-DEPOSITION
MOLECULAR-BEAM EPITAXY
QUANTUM DOTS
SURFACE MIGRATION
FABRICATION
GAAS(100)
ISLANDS
WIRES
Formation trends of ordered self-assembled nanoislands on stepped substrates
期刊论文
OAI收割
journal of applied physics, 2010, 卷号: 108, 期号: 7, 页码: art. no. 073512
Liang S (Liang S.)
;
Zhu HL (Zhu H. L.)
;
Kong DH (Kong D. H.)
;
Wang W (Wang W.)
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2010/11/14
CHEMICAL-VAPOR-DEPOSITION
INAS QUANTUM DOTS
MOLECULAR-BEAM EPITAXY
GAAS
SURFACES
ISLANDS
GROWTH
FABRICATION
MIGRATION
ARRAYS
Homogeneous Epitaxial Growth of N,N '-di(n-butyl)quinacridone Thin Films on Ag(110)
期刊论文
OAI收割
journal of nanoscience and nanotechnology, 2010, 卷号: 10, 期号: 11 sp. iss. si, 页码: 7162-7166
Lin F (Lin Feng)
;
Fang ZY (Fang Zheyu)
;
Qu SC (Qu Shengchun)
;
Huang S (Huang Shan)
;
Song WT (Song Wentao)
;
Chi LF (Chi Lifeng)
;
Zhu X (Zhu Xing)
收藏
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浏览/下载:18/0
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提交时间:2010/11/30
MOLECULAR-BEAM DEPOSITION
QUASIEPITAXIAL GROWTH
ORGANIC FILMS
LEED
PTCDA
STM
MONOLAYERS
GRAPHITE
Temperature dependent photoluminescence of an In(Ga)As/GaAs quantum dot system with different areal density
期刊论文
OAI收割
journal of physics d-applied physics, 2010, 卷号: 43, 期号: 29, 页码: art. no. 295401
Zhou XL (Zhou X. L.)
;
Chen YH (Chen Y. H.)
;
Liu JQ (Liu J. Q.)
;
Jia CH (Jia C. H.)
;
Zhou GY (Zhou G. Y.)
;
Ye XL (Ye X. L.)
;
Xu B (Xu Bo)
;
Wang ZG (Wang Z. G.)
收藏
  |  
浏览/下载:336/26
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提交时间:2010/08/17
CARRIER RELAXATION
STATES
SUPERLATTICES
CONFINEMENT
LASER
Annealing behaviors of long-wavelength InAs/GaAs quantum dots with different growth procedures by metalorganic chemical vapor deposition
期刊论文
OAI收割
journal of crystal growth, 2009, 卷号: 311, 期号: 8, 页码: 2281-2284
作者:
Ye XL
;
Liang S
收藏
  |  
浏览/下载:32/4
  |  
提交时间:2010/03/08
Photoluminescence
Metalorganic vapor phase epitaxy
Self-assembled quantum dots
Indium arsenide
Photoluminescence investigation of InAs bimodal self-assembled quantum dots state filling
期刊论文
OAI收割
spectroscopy and spectral analysis, 2007, 卷号: 27, 期号: 11, 页码: 2178-2181
Jia, GZ
;
Yao, JH
;
Zhang, CL
;
Shu, Q
;
Liu, RB
;
Ye, XL
;
Wang, ZG
收藏
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浏览/下载:60/2
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提交时间:2010/03/08
photoluminescence spectroscopy
quantum dot
bimodal distribution
state-filling