中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
半导体研究所 [20]
采集方式
OAI收割 [20]
内容类型
期刊论文 [15]
会议论文 [5]
发表日期
2012 [1]
2011 [2]
2009 [2]
2008 [2]
2007 [2]
2006 [3]
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学科主题
光电子学 [20]
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Interfacial misfit dislocation scattering effect in two-dimensional electron gas channel of GaN heterojunction
期刊论文
OAI收割
physics letters a, 2012, 卷号: 376, 期号: 2012-10-11, 页码: 1067-1071
Liu, B
;
Lu, YW
;
Huang, Y
;
Liu, GP
;
Zhu, QS
;
Wang, ZG
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2013/03/17
Localized flexible integration of high-efficiency surface enhanced Raman scattering (SERS) monitors into microfluidic channels
期刊论文
OAI收割
lab on a chip, 2011, 卷号: 11, 期号: 19, 页码: 3347-3351
Xu, BB
;
Ma, ZC
;
Wang, L
;
Zhang, R
;
Niu, LG
;
Yang, Z
;
Zhang, YL
;
Zheng, WH
;
Zhao, B
;
Xu, Y
;
Chen, QD
;
Xia, H
;
Sun, HB
收藏
  |  
浏览/下载:19/0
  |  
提交时间:2012/02/06
MICROCHIP ELECTROPHORESIS
RESONANCE RAMAN
SINGLE-MOLECULE
GLUCOSE-OXIDASE
SILVER
CHIP
SPECTROSCOPY
NANOPARTICLES
SPECTROMETRY
FABRICATION
Optical properties of the crescent and coherent applications
期刊论文
OAI收割
optics express, 2011, 卷号: 19, 期号: 9, 页码: 8303-8311
作者:
Jiang B
;
Yan XY
收藏
  |  
浏览/下载:62/7
  |  
提交时间:2011/07/06
ENHANCED RAMAN-SCATTERING
GOLD NANOPARTICLES
RESONANCE
SPECTROSCOPY
NANOCAVITIES
Experimental investigation on submicron rib waveguide microring/racetrack resonators in silicon-on-insulator
期刊论文
OAI收割
optics communications, 2009, 卷号: 282, 期号: 1, 页码: 22-26
Huang, QZ
;
Yu, YD
;
Yu, JZ
收藏
  |  
浏览/下载:50/0
  |  
提交时间:2010/03/08
Resonators
Submicron rib waveguides
Silicon-on-insulator
Polarization
Revised ab initio natural band offsets of all group IV, II-VI, and III-V semiconductors
期刊论文
OAI收割
applied physics letters, 2009, 卷号: 94, 期号: 21, 页码: art. no. 212109
作者:
Li JB
收藏
  |  
浏览/下载:112/0
  |  
提交时间:2010/03/08
ab initio calculations
band structure
cadmium compounds
III-V semiconductors
II-VI semiconductors
IV-VI semiconductors
zinc compounds
Investigation on the structural origin of n-type conductivity in InN films
期刊论文
OAI收割
journal of physics d-applied physics, 2008, 卷号: 41, 期号: 13, 页码: art. no. 135403
Wang, H
;
Jiang, DS
;
Wang, LL
;
Sun, X
;
Liu, WB
;
Zhao, DG
;
Zhu, JJ
;
Liu, ZS
;
Wang, YT
;
Zhang, SM
;
Yang, H
收藏
  |  
浏览/下载:53/1
  |  
提交时间:2010/03/08
MOLECULAR-BEAM EPITAXY
GAN FILMS
DISLOCATION SCATTERING
LAYER THICKNESS
INDIUM NITRIDE
BAND-GAP
VACANCIES
Native deep level defects in ZnO single crystal grown by CVT method - art. no. 68410I
会议论文
OAI收割
conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007
Zhao, YW
;
Zhang, F
;
Zhang, R
;
Dong, ZY
;
Wei, XC
;
Zeng, YP
;
Li, JM
收藏
  |  
浏览/下载:43/0
  |  
提交时间:2010/03/09
zinc oxide
defect
vacancy
Does an enhanced yellow luminescence imply a reduction of electron mobility in n-type GaN?
期刊论文
OAI收割
journal of applied physics, 2007, 卷号: 102, 期号: 11, 页码: art. no. 113521
Zhao, DG
;
Jiang, DS
;
Zhu, JJ
;
Liu, ZS
;
Zhang, SM
;
Liang, JW
;
Yang, H
收藏
  |  
浏览/下载:50/5
  |  
提交时间:2010/03/08
CHEMICAL-VAPOR-DEPOSITION
MOLECULAR-BEAM EPITAXY
X-RAY-DIFFRACTION
MG-DOPED GAN
UNDOPED GAN
PHOTOLUMINESCENCE BANDS
THREADING DISLOCATIONS
POSITRON-ANNIHILATION
GROWTH STOICHIOMETRY
GALLIUM NITRIDE
An n-type SiGe/Ge QC structure utilizing the deep Ge quantum well for electron at the Gamma point
期刊论文
OAI收割
semiconductor science and technology, 2007, 卷号: 22, 期号: 7, 页码: 769-773
Han GQ (Han Genquan)
;
Yu JZ (Yu Jinzhong)
收藏
  |  
浏览/下载:64/0
  |  
提交时间:2010/03/29
CASCADE STRUCTURES
Comparison between double crystals X-ray diffraction micro-Raman measurement on composition determination of high Ge content Si1_xGex layer epitaxied on Si substrate
期刊论文
OAI收割
journal of materials science & technology, 2006, 卷号: 22, 期号: 5, 页码: 651-654
Zhao L (Zhao Lei)
;
Zuo YH (Zuo Yuhua)
;
Cheng BW (Cheng Buwen)
;
Yu JZ (Yu Jinzhong)
;
Wang QM (Wang Qiming)
收藏
  |  
浏览/下载:37/0
  |  
提交时间:2010/04/11
Si1_xGex
Ge content
composition determination
double crystals X-ray diffraction (DCXRD)
micro-Raman measurement
BAND-GAP
HETEROSTRUCTURES
SUPERLATTICES
ALLOYS
RELAXATION
SCATTERING
THICKNESS
STRAIN