机构

• 长春光学精密机械与物... [5]
• 宁波材料技术与工程研... [4]
• 西安光学精密机械研究... [1]

采集方式

• OAI收割 [10]

内容类型

• 会议论文 [10]

发表日期

• 2018 [2]
• 2017 [2]
• 2014 [2]
• 2013 [3]
• 2011 [1]

学科主题

• Materials ... [4]
• Physics [4]

筛选

浏览/检索结果: 共10条，第1-10条 帮助 限定条件 内容类型：会议论文     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Structure of uniform and high-quality Al-doped ZnO films by magnetron sputter deposition at low temperatures 会议论文  OAI收割 APR 23-27, 2018 作者:  Meng, Fanping;  Peng, Shou;  Xu, Genbao;  Wang, Yun;  Ge, Fangfang   |  收藏  |  浏览/下载：7/0  |  提交时间：2021/12/02 THIN-FILMS  ZINC-OXIDE  RAMAN-SCATTERING  GROWTH  DC  PROPERTY  IONS  GA   Ga-doped ZnO films magnetron sputtered at ultralow discharge voltages: Significance of controlling defect generation 会议论文  OAI收割 OCT 15-18, 2017 作者:  Chen, Yuyun;  Meng, Fanping;  Ge, Fangfang;  Xu, Genbao;  Huang, Feng   |  收藏  |  浏览/下载：7/0  |  提交时间：2021/12/02 SUBSTRATE-TEMPERATURE  ELECTRICAL-PROPERTIES  RAMAN-SCATTERING  AL  DEPENDENCE   Ga-doped ZnO films by magnetron sputtering at ultralow discharge voltages: Effects of defect annihilation 会议论文  OAI收割 APR 24-28, 2017 作者:  Chen, Yuyun;  Meng, Fanping;  Ge, Fangfang;  Huang, Feng   |  收藏  |  浏览/下载：8/0  |  提交时间：2021/12/02 OXIDE THIN-FILMS  MECHANICAL-PROPERTIES  ELECTRICAL-PROPERTIES  MICROSTRUCTURE  ALUMINUM  CRYSTALLINITY  TRANSMITTANCE  TEMPERATURE  DEPOSITION  GALLIUM   Highly moisture and weak-acid resistant Ga-doped ZnO films with titanium dioxide co-doping fabricated by magnetron sputtering 会议论文  OAI收割 OCT 09-13, 2016 作者:  Zhu, Chaoting;  Li, Jia;  Yang, Ye;  Zhao, Xunna;  Zou, Wenwei   |  收藏  |  浏览/下载：9/0  |  提交时间：2021/12/02 OXIDE THIN-FILMS  SEMICONDUCTORS  MODULES   The structural, electrical, magnetic properties of (Cu, Co) co-doped ZnO thin film 会议论文  OAI收割 2014 International Conference on Mechatronics Engineering and Computing Technology, ICMECT 2014, April 9, 2014 - April 10, 2014, Shanghai, China Cao P.; Bai Y.; Qu Z. 收藏  |  浏览/下载：12/0  |  提交时间：2015/04/27 Raman spectroscopy and periodic surface structures of Mg:ZnO thin film fabricated by femtosecond laser pulses 会议论文  OAI收割 nanophotonics v, brussels, belgium, 2014-04-13 作者:  Cheng, Guanghua 收藏  |  浏览/下载：18/0  |  提交时间：2015/03/31 Structure and magnetic properties of (Al, Co) Co-doped ZnO thin films (EI CONFERENCE) 会议论文  OAI收割 2012 International Conference on Materials Science and Nanotechnology, ICMSN 2012, November 16, 2012 - November 18, 2012, Guangzhou, China Cao P.; Bai Y. 收藏  |  浏览/下载：23/0  |  提交时间：2013/03/25 In this study  Zn0.99Co0.01Al0.015O thin film has been prepared by sol-gel method. The structural and magnetic properties of the sample were investigated. X-ray diffraction spectroscopy analyses indicate that the Co and Al codoping can not disturb the structure of ZnO. No additional peaks are observed in the Zn0.99Co0.01Al xO and Al3+ and Co2+ substitute for Zn 2+ without changing the wurtzite structure. The resistance measurements confirm that Al ions increase the free carriers concentration. Based on the above experiments we think the ferromagnetic behavior of the sample could not originate from Co nanoclusters. The presence of free carriers and localized d spins is a prerequisite for the appearance of ferromagnetism. As the result  the carriers generated by Al doping is considered a main factor to induce the ferromagnetic phenomenon. (2013) Trans Tech Publications  Switzerland.   Structure and magnetic properties of (Al, Co) Co-doped ZnO thin films 会议论文  OAI收割 2012 International Conference on Materials Science and Nanotechnology, ICMSN 2012, November 16, 2012 - November 18, 2012, Guangzhou, China, November 16, 2012 - November 18, 2012 Cao P.; Bai Y. 收藏  |  浏览/下载：13/0  |  提交时间：2014/05/15 Structural and electrical properties of (Cu, Co) co-doped ZnO thin film 会议论文  OAI收割 2013 International Forum on Mechanical and Material Engineering, IFMME 2013, June 13, 2013 - June 14, 2013, Guangzhou, China Cao P.; Bai Y. 收藏  |  浏览/下载：12/0  |  提交时间：2014/05/15 Control of N/N2 species ratio in NO plasma for p-type doping of ZnO (EI CONFERENCE) 会议论文  OAI收割 作者:  Chen X.;  Liu L.;  Liu L.;  Li B.;  Li B. 收藏  |  浏览/下载：14/0  |  提交时间：2013/03/25 Nitrogen-doped ZnO thin films were grown on c-plane sapphire (Al 2O3) substrates via plasma-assisted molecular beam epitaxy using plasma activated nitric oxide (NO) as the oxygen source and dopant. X-ray diffraction measurements indicate that a small NO flux benefits the crystal quality of the thin films. Hall effect measurements indicate that the electron density of the ZnO films decreases gradually with decreasing NO flux  and the conduction reverses to p-type at a certain flux. Optical emission spectra indicate that the N atom content in the NO plasma increases with decreasing NO flux  and the origin of this is discussed. X-ray photoelectron spectroscopy measurements demonstrate that the number of N atom occupied O sites in the ZnO lattice increases correspondingly. 2011 American Institute of Physics.