机构

• 半导体研究所 [7]

采集方式

• OAI收割 [7]

内容类型

• 期刊论文 [7]

发表日期

• 2011 [7]

学科主题

• 半导体物理 [7]

筛选

浏览/检索结果: 共7条，第1-7条 帮助 限定条件 学科主题：半导体物理    发表日期：2011     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 GaAs-based long-wavelength InAs quantum dots on multi-step-graded InGaAs metamorphic buffer grown by molecular beam epitaxy 期刊论文  OAI收割 journal of physics d-applied physics, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 2011, 卷号: 44, 44, 期号: 33, 页码: 335102, 335102 作者:  He JF;  Wang HL;  Shang XJ;  Li MF;  Zhu Y   |  收藏  |  浏览/下载：23/0  |  提交时间：2012/01/06 1.3 MU-M  STRAIN RELIEF  LASERS  SUBSTRATE  PHOTOLUMINESCENCE  DISLOCATIONS  OPERATION  RANGE  1.3 Mu-m  Strain Relief  Lasers  Substrate  Photoluminescence  Dislocations  Operation  Range   Native p-type transparent conductive CuI via intrinsic defects 期刊论文  OAI收割 journal of applied physics, JOURNAL OF APPLIED PHYSICS, 2011, 2011, 卷号: 110, 110, 期号: 5, 页码: 54907, 54907 作者:  Wang J;  Li JB;  Li SS;  Li, JB (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China, jbli@semi.ac.cn   |  收藏  |  浏览/下载：35/0  |  提交时间：2012/01/06 HYBRID ELECTROCHEMICAL/CHEMICAL SYNTHESIS  AUGMENTED-WAVE METHOD  COPPER HALIDES  BAND-STRUCTURE  II-VI  SEMICONDUCTORS  EMISSION  DIAMOND  CUBR  CUCL  Hybrid Electrochemical/chemical Synthesis  Augmented-wave Method  Copper Halides  Band-structure  Ii-vi  Semiconductors  Emission  Diamond  Cubr  Cucl   Origin of the low thermal conductivity of the thermoelectric material beta-Zn(4)Sb(3): An ab initio theoretical study 期刊论文  OAI收割 applied physics letters, APPLIED PHYSICS LETTERS, 2011, 2011, 卷号: 98, 98, 期号: 24, 页码: 241901, 241901 作者:  Chen, WB;  Li, JB;  Chen, WB (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China,jbli@semi.ac.cn   |  收藏  |  浏览/下载：12/0  |  提交时间：2012/01/06 PHONON-GLASS  INTERSTITIAL ZN  ZN4SB3  ENERGY  ZINC  Phonon-glass  Interstitial Zn  Zn4sb3  Energy  Zinc   The explanation of InN bandgap discrepancy based on experiments and first-principle calculations 期刊论文  OAI收割 physics letters a, PHYSICS LETTERS A, 2011, 2011, 卷号: 375, 375, 期号: 7, 页码: 1152-1155, 1152-1155 作者:  Liu CR;  Li JB;  Liu, CR, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. supermanliu5@semi.ac.cn;  jbli@semi.ac.cn   |  收藏  |  浏览/下载：59/6  |  提交时间：2011/07/05 First principle calculation  Indium nitride  Band gap  Defect  INITIO MOLECULAR-DYNAMICS  AUGMENTED-WAVE METHOD  INDIUM NITRIDE  GAP  PSEUDOPOTENTIALS  SEMICONDUCTORS  IMPURITIES  ABSORPTION  DEFECTS  ALLOYS  First Principle Calculation  Indium Nitride  Band Gap  Defect  Initio Molecular-dynamics  Augmented-wave Method  Indium Nitride  Gap  Pseudopotentials  Semiconductors  Impurities  Absorption  Defects  Alloys   Characteristics of undoped and Sb-doped ZnO thin films prepared in different atmospheres by pulsed laser deposition 期刊论文  OAI收割 physica status solidi a-applications and materials science, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2011, 2011, 卷号: 208, 208, 期号: 4, 页码: 843-850, 843-850 作者:  Zhu BL;  Zhu SJ;  Zhao XZ;  Su FH;  Li GH   |  收藏  |  浏览/下载：95/5  |  提交时间：2011/07/05 conductivity  doping  photoluminescence  pulsed laser deposition  ZnO  ZINC-OXIDE  ELECTRICAL-PROPERTIES  OPTICAL-PROPERTIES  OXYGEN-PRESSURE  PHOTOLUMINESCENCE  LUMINESCENCE  VIOLET  GROWTH  FABRICATION  DEPENDENCE  Conductivity  Doping  Photoluminescence  Pulsed Laser Deposition  Zno  Zinc-oxide  Electrical-properties  Optical-properties  Oxygen-pressure  Photoluminescence  Luminescence  Violet  Growth  Fabrication  Dependence   Photoluminescence of CdSe nanowires grown with and without metal catalyst 期刊论文  OAI收割 nano research, NANO RESEARCH, 2011, 2011, 卷号: 4, 4, 期号: 4, 页码: 343-359, 343-359 作者:  Fasoli A;  Colli A;  Martelli F;  Pisana S;  Tan PH   |  收藏  |  浏览/下载：52/5  |  提交时间：2011/07/05 CdSe  nanowires  photoluminescence  CHEMICAL-VAPOR-DEPOSITION  SHAPE-SELECTIVE SYNTHESIS  LIQUID-SOLID MECHANISM  OPTICAL-PROPERTIES  SILICON NANOWIRES  SI NANOWIRES  ZNSE NANOWIRES  SEMICONDUCTOR NANOCRYSTALS  STRUCTURAL-PROPERTIES  EPITAXIAL-GROWTH  Cdse  Nanowires  Photoluminescence  Chemical-vapor-deposition  Shape-selective Synthesis  Liquid-solid Mechanism  Optical-properties  Silicon Nanowires  Si Nanowires  Znse Nanowires  Semiconductor Nanocrystals  Structural-properties  Epitaxial-growth   First principle study of the thermal conductance in graphene nanoribbon with vacancy and substitutional silicon defects 期刊论文  OAI收割 applied physics letters, APPLIED PHYSICS LETTERS, 2011, 2011, 卷号: 98, 98, 期号: 11, 页码: article no.113114, Article no.113114 作者:  Jiang JW;  Wang BS;  Wang JS;  Jiang, JW, Natl Univ Singapore, Dept Phys, Singapore 117542, Singaporephyjj@nus.edu.sg   |  收藏  |  浏览/下载：52/4  |  提交时间：2011/07/05