中国科学院机构知识库网格系统: 检索

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	1.3 mu m high indium content (42.5%) GaInNAs/GaAs quantum wells grown by molecular beam epitaxy 会议论文 OAI收割 32nd international symposium on compound semiconductors, rust, germany, sep 18-22, 2005 Niu, ZC; Zhang, SY; Ni, HQ; Wu, DH; He, ZH; Sun, Z; Han, Q; Wu, RG 收藏 \| 浏览/下载：223/60 \| 提交时间：2010/03/29 IMPROVED LUMINESCENCE EFFICIENCY TEMPERATURE PHOTOLUMINESCENCE NITROGEN ORIGIN DIODES
	Improvement of the electrical property of semi-insulating InP by suppression of compensation defects 会议论文 OAI收割 17th international conference on indium phosphide and related materials, glasgow, scotland, may 08-12, 2005 Zhao, YW; Dong, ZY 收藏 \| 浏览/下载：220/68 \| 提交时间：2010/03/29 ENCAPSULATED CZOCHRALSKI INP SEMICONDUCTOR COMPOUND-CRYSTALS STIMULATED CURRENT SPECTROSCOPY CURRENT TRANSIENT SPECTROSCOPY DEEP-LEVEL DEFECTS ANNEALING AMBIENT POINT-DEFECTS FE PHOSPHIDE DONORS
	Electronic and vibrational Raman scattering in resonance with yellow luminescence transitions in GaN on sapphire substrate 会议论文 OAI收割 24th ieee international symposium on compound semiconductors, san diego, california, sep 08-11, 1997 作者: Jiang DS 收藏 \| 浏览/下载：14/0 \| 提交时间：2010/11/15 SHALLOW DONORS
	New method for the growth of highly uniform quantum dots 会议论文 OAI收割 2nd international conference on low dimensional structures and devices, lisbon, portugal, may 19-21, 1997 Pan D; Zeng YP; Kong MY 收藏 \| 浏览/下载：9/0 \| 提交时间：2010/11/15 self-formed quantum dot Stranski-Krastanow growth mode superlattice MOLECULAR-BEAM EPITAXY INGAAS GAAS DISLOCATIONS MULTILAYERS DEFECTS STRAIN
	Observation of defects in GaN epilayers 会议论文 OAI收割 7th international conference on defect recognition and image processing in semiconductors (drip-vii), templin, germany, sep 07-10, 1997 Kang JY; Liu XL; Ogawa T 收藏 \| 浏览/下载：10/0 \| 提交时间：2010/11/15 SCATTERING SAPPHIRE GROWTH