机构

• 半导体研究所 [18]

采集方式

• OAI收割 [18]

内容类型

• 会议论文 [18]

发表日期

• 2009 [2]
• 2008 [3]
• 2006 [7]
• 2004 [3]
• 2003 [1]
• 2000 [1]
• 更多

学科主题

• 半导体材料 [18]

筛选

浏览/检索结果: 共18条，第1-10条 帮助 限定条件 内容类型：会议论文    学科主题：半导体材料     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate using AlN as a Buffer Layer 会议论文  OAI收割 international conference on silicon carbide and related materials, otsu, japan, oct 14-19, 2007 Zhao, YM; Sun, GS; Liu, XF; Li, JY; Zhao, WS; Wang, L; Li, JM; Zeng, YP 收藏  |  浏览/下载：54/0  |  提交时间：2010/03/09 Silicon Carbide  Aluminum Nitride  buffer layer  LPCVD   Morphology and wetting layer properties of InAs/GaAs nanostructures 会议论文  OAI收割 5th international conference on semiconductor quantum dots, gyeongju, south korea, may 11-16, 2008 作者:  Xu B 收藏  |  浏览/下载：30/0  |  提交时间：2010/03/09 MOLECULAR-BEAM EPITAXY   AlGaN/GaN/InGaN/GaN DH-HEMTs structure with an AlN interlayer grown by MOCVD 会议论文  OAI收割 34th international symposium on compound semiconductors, kyoto, japan, oct 15-18, 2007 Tang, J; Wang, XL; Xiao, HL; Ran, JX; Wang, CM; Wang, XY; Hu, GX; Li, JM 收藏  |  浏览/下载：46/0  |  提交时间：2010/03/09 PERFORMANCE  HETEROSTRUCTURES  OPTIMIZATION  MOBILITY   AlGaN/AlN/GaN/InGaN/GaN DH-HEMTs with improved mobility grown by MOCVD 会议论文  OAI收割 9th international conference on solid-state and integrated-circuit technology, beijing, peoples r china, oct 20-23, 2008 作者:  Hou QF;  Zhang ML 收藏  |  浏览/下载：51/0  |  提交时间：2010/03/09 ALGAN/GAN HEMTS   High epitaxial growth rate of 4H-SiC using TCS as silicon precursor 会议论文  OAI收割 9th international conference on solid-state and integrated-circuit technology, beijing, peoples r china, oct 20-23, 2008 Ji, G; Sun, GS; Ning, J; Liu, XF; Zhao, YM; Wang, L; Zhao, WS; Zeng, YP 收藏  |  浏览/下载：34/0  |  提交时间：2010/03/09 Study on surface morphology of GaN growth by MOCVD on GaN/Si(111) template 会议论文  OAI收割 3rd asian conference on crystal growth and crystal technology (cgct-3), beijing, peoples r china, oct 16-19, 2005 Liu, Z; Wang, JX; Wang, XL; Hu, GX; Guo, LC; Liu, HX; Li, JP; Li, JM; Zeng, YP 收藏  |  浏览/下载：222/40  |  提交时间：2010/03/29 surface morphology   Influence of Al content on electrical and structural properties of Si-doped AlxGa1-xN/GaN HEMT structures 会议论文  OAI收割 32nd international symposium on compound semiconductors, rust, germany, sep 18-22, 2005 Wang, CM; Wang, XL; Hu, GX; Wang, JX; Li, JP 收藏  |  浏览/下载：118/30  |  提交时间：2010/03/29 HIGH BREAKDOWN VOLTAGE  MOBILITY TRANSISTORS  HETEROSTRUCTURES  SAPPHIRE  GANHEMTS   Synthesis of GaN nanorods with vertebra-like morphology 会议论文  OAI收割 ieee international conference of nano/micro engineered and molecular systems, zhuhai, peoples r china, jan 18-21, 2006 Gao, HY (Gao, Haiyong); Li, JM (Li, Jinmin) 收藏  |  浏览/下载：112/30  |  提交时间：2010/03/29 GaN nanorods  Ga2O3/ZnO films  nitritding  morphology  CHEMICAL-VAPOR-DEPOSITION  FILMS   Growth and characterization of semi-insulating GaN films grown by MOCVD 会议论文  OAI收割 3rd asian conference on crystal growth and crystal technology (cgct-3), beijing, peoples r china, oct 16-19, 2005 Fang, CB; Wang, XL; Hu, GX; Wang, JX; Wang, CM; Li, JM 收藏  |  浏览/下载：202/36  |  提交时间：2010/03/29 MOCVD   The study of high temperature annealing of a-SiC : H films 会议论文  OAI收割 3rd international materials symposium/12th meeting of the sociedad-portuguesa-da-materials (materials 2005/spm), aveiro, portugal, mar 20-23, 2005 Zhang, S; Hu, Z; Raniero, L; Liao, X; Ferreira, I; Fortunato, E; Vilarinho, P; Perreira, L; Martins, R 收藏  |  浏览/下载：209/71  |  提交时间：2010/03/29 silicon carbide  high temperature annealing  thin film  SILICON  PECVD