机构

• 上海微系统与信息技术... [8]

采集方式

• OAI收割 [8]

内容类型

• 期刊论文 [8]

发表日期

• 2006 [2]
• 2005 [2]
• 2004 [3]
• 1981 [1]

学科主题

• Physics, M... [8]

筛选

浏览/检索结果: 共8条，第1-8条 帮助 限定条件 专题：上海微系统与信息技术研究所    第一署名单位    第一作者单位    通讯作者单位    学科主题：Physics, Multidisciplinary     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Total dose radiation tolerance of phase change memory cell with GeSbTe alloy 期刊论文  OAI收割 CHINESE PHYSICS LETTERS, 2006, 卷号: 23, 期号: 9, 页码: 2557-2559 Wu, LC; Liu, B; Song, ZT; Feng, GM; Feng, SL; Chen, B 收藏  |   Study on the delamination of tungsten thin films on Sb2Te3 期刊论文  OAI收割 CHINESE PHYSICS, 2006, 卷号: 15, 期号: 8, 页码: 1849-1854 Xu, JQ; Liu, B; Song, ZT; Feng, SL; Chen, B 收藏  |   Phase transition phenomena in ultra-thin Ge2Sb2Te5 film 期刊论文  OAI收割 CHINESE PHYSICS LETTERS, 2005, 卷号: 22, 期号: 7, 页码: 1803-1805 Zhang, T; Liu, B; Song, ZT; Liu, WL; Feng, SL; Chen, B 收藏  |   Characteristics of Sn-doped Ge2Sb2Te5 films used for phase-change memory 期刊论文  OAI收割 CHINESE PHYSICS LETTERS, 2005, 卷号: 22, 期号: 11, 页码: 2929-2932 Xu, C; Liu, B; Song, ZT; Feng, SL; Chen, B 收藏  |   Novel material for nonvolatile ovonic unified memory (OUM)-Ag11In12Te26Sb51 phase change semiconductor 期刊论文  OAI收割 CHINESE PHYSICS, 2004, 卷号: 13, 期号: 7, 页码: 1167-1170 Liu, B; Song, ZT; Zhang, T; Feng, SL; Gan, FX 收藏  |   Effect of annealing temperature on the microstructure and resistivity of Ge2Sb2Te5 films 期刊论文  OAI收割 CHINESE PHYSICS LETTERS, 2004, 卷号: 21, 期号: 6, 页码: 1143-1146 Liu, B; Song, ZT; Feng, SL; Chen, B 收藏  |   Structure and electrical properties of Ge2Sb2Te5 thin film used for Ovonic unified memory 期刊论文  OAI收割 CHINESE PHYSICS LETTERS, 2004, 卷号: 21, 期号: 4, 页码: 741-743 Zhang, T; Liu, B; Xia, JL; Song, ZT; Feng, SL; Chen, B 收藏  |   A CRYSTALLOGRAPHIC INVESTIGATION ON THE ONE-DIMENSIONAL TRANSITION PHASE BETA-'-2 IN AN AGED MG-ZN ALLOY 期刊论文  OAI收割 CHINESE PHYSICS, 1981, 卷号: 1, 期号: 2, 页码: 292-301 SU,QW; XU,SS 收藏  |