机构

• 半导体研究所 [30]

采集方式

• OAI收割 [30]

内容类型

• 期刊论文 [27]
• 会议论文 [3]

发表日期

• 2012 [3]
• 2011 [2]
• 2010 [4]
• 2009 [1]
• 2008 [3]
• 2007 [1]
• 更多

学科主题

• 半导体材料 [30]

筛选

浏览/检索结果: 共30条，第1-10条 帮助 限定条件 专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位    学科主题：半导体材料     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Investigation of wetting layers in InAs/GaAs self-assembled nanostructures with reflectance difference spectroscopy 期刊论文  OAI收割 journal of bionanoscience, 2012, 卷号: 6, 期号: 1, 页码: 200-216 Zhang, H.Y; Chen, Y.H; Wang, Z.G 收藏  |   Wetting layer evolution and its temperature dependence during self-assembly of InAs/GaAs quantum dots 期刊论文  OAI收割 nanoscale research letters, 2012, 卷号: 7 Zhang, Hongyi; Chen, Yonghai; Zhou, Guanyu; Tang, Chenguang; Wang, Zhanguo 收藏  |   Wetting layer evolution and its temperature dependence during self-assembly of InAs/GaAs quantum dots 期刊论文  OAI收割 nanoscale research letters, 2012, 卷号: 7, 页码: 600 Zhang HY (Zhang, Hongyi); Chen YH (Chen, Yonghai); Zhou GY (Zhou, Guanyu); Tang CG (Tang, Chenguang); Wang ZG (Wang, Zhanguo) 收藏  |   Effects of ultra-low Al alloying In(Al) As layer on the formation and evolution of InAs/GaAs quantum dots 期刊论文  OAI收割 journal of applied physics, 2011, 卷号: 109, 期号: 9, 页码: article no.94311 作者:  Xu B;  Zhou GY;  Ye XL;  Zhang HY 收藏  |   The transition from two-stage to three-stage evolution of wetting layer of InAs/GaAs quantum dots caused by postgrowth annealing 期刊论文  OAI收割 applied physics letters, 2011, 卷号: 98, 期号: 7, 页码: article no.71914 作者:  Jin P;  Ye XL;  Zhou XL 收藏  |   The two- to three-dimensional growth transition of InAs/GaAs epitaxy layer studied by reflectance difference spectroscopy 期刊论文  OAI收割 journal of applied physics, 2010, 卷号: 108, 期号: 8, 页码: art. no. 083513 Zhou GY (Zhou G. Y.); Chen YH (Chen Y. H.); Tang CG (Tang C. G.); Liang LY (Liang L. Y.); Jin P (Jin P.); Wang ZG (Wang Z. G.) 收藏  |   Structure and properties of InAs/AlAs quantum dots for broadband emission 期刊论文  OAI收割 journal of applied physics, 2010, 卷号: 108, 期号: 10, 页码: art. no. 103515 Meng XQ (Meng X. Q.); Jin P (Jin P.); Liang ZM (Liang Z. M.); Liu FQ (Liu F. Q.); Wang ZG (Wang Z. G.); Zhang ZY (Zhang Z. Y.) 收藏  |   Temperature-dependent modulation characteristics for 1.3 mu m InAs/GaAs quantum dot lasers 期刊论文  OAI收割 journal of applied physics, 2010, 卷号: 107, 期号: 1, 页码: art. no. 013102 Xu PF (Xu Peng-Fei); Yang T (Yang Tao); Ji HM (Ji Hai-Ming); Cao YL (Cao Yu-Lian); Gu; YX (Gu Yong-Xian); Liu Y (Liu Yu); Ma WQ (Ma Wen-Quan); Wang ZG (Wang Zhan-Guo) 收藏  |   Temperature dependent photoluminescence of an In(Ga)As/GaAs quantum dot system with different areal density 期刊论文  OAI收割 journal of physics d-applied physics, 2010, 卷号: 43, 期号: 29, 页码: art. no. 295401 Zhou XL (Zhou X. L.); Chen YH (Chen Y. H.); Liu JQ (Liu J. Q.); Jia CH (Jia C. H.); Zhou GY (Zhou G. Y.); Ye XL (Ye X. L.); Xu B (Xu Bo); Wang ZG (Wang Z. G.) 收藏  |   Morphology and wetting layer properties of InAs/GaAs nanostructures 会议论文  OAI收割 5th international conference on semiconductor quantum dots, gyeongju, south korea, may 11-16, 2008 作者:  Xu B 收藏  |