中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
半导体研究所 [11]
采集方式
OAI收割 [11]
内容类型
期刊论文 [10]
会议论文 [1]
发表日期
2009 [1]
2008 [1]
2007 [1]
2003 [2]
2001 [1]
1998 [1]
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学科主题
半导体物理 [11]
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Properties of AlyGa1-yN/AlxGa1-xN/AlN/GaN Double-Barrier High Electron Mobility Transistor Structure
期刊论文
OAI收割
chinese physics letters, 2009, 卷号: 26, 期号: 1, 页码: art. no. 017301
Guo LC
;
Wang XL
;
Xiao HL
;
Ran JX
;
Wang CM
;
Ma ZY
;
Luo WJ
;
Wang ZG
收藏
  |  
浏览/下载:193/43
  |  
提交时间:2010/03/08
CONTENT ALGAN/GAN HETEROSTRUCTURES
CHEMICAL-VAPOR-DEPOSITION
FIELD-EFFECT TRANSISTORS
AL-CONTENT
ALGAN/ALN/GAN HETEROSTRUCTURES
HEMT STRUCTURES
PHASE EPITAXY
SAPPHIRE
GAS
DENSITIES
A new method to reduce the dark current of GaN based Schottky barrier ultraviolet photodetector
期刊论文
OAI收割
acta physica sinica, 2008, 卷号: 57, 期号: 4, 页码: 2548-2553
作者:
Zhao DG
收藏
  |  
浏览/下载:31/2
  |  
提交时间:2010/03/08
GaN
Room-temperature photoluminescence of ZnO/MgO multiple quantum wells deposited by reactive magnetron sputtering
期刊论文
OAI收割
acta physica sinica, 2007, 卷号: 56, 期号: 2, 页码: 1082-1087
Xin, P (Xin Ping)
;
Sun, CW (Sun Cheng-Wei)
;
Qin, FW (Qin Fu-Wen)
;
Wen, SP (Wen Sheng-Ping)
;
Zhang, QY (Zhang Qing-Yu)
收藏
  |  
浏览/下载:35/0
  |  
提交时间:2010/03/29
ZnO/MgO
Resonant tunneling of holes in GaMnAs-related double- barrier structures
会议论文
OAI收割
pasps conference 2002, wurzburg, germany, jul, 2002
Wu HB
;
Chang K
;
Xia JB
;
Peeters FM
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2010/11/15
Zeeman effect
GaMnAs layer
double-barrier structure
APPROXIMATION
Resonant tunneling of holes in GaMnAs-related double- barrier structures
期刊论文
OAI收割
journal of superconductivity, 2003, 卷号: 16, 期号: 2, 页码: 279-282
Wu HB
;
Chang K
;
Xia JB
;
Peeters FM
收藏
  |  
浏览/下载:80/0
  |  
提交时间:2010/08/12
Zeeman effect
GaMnAs layer
double-barrier structure
APPROXIMATION
Electroluminescence from Au/(SiO2/Si/SiO2) nanometer double barrier/p-Si structures and its mechanism
期刊论文
OAI收割
journal of physics-condensed matter, 2001, 卷号: 13, 期号: 50, 页码: 11751-11761
Qin GG
;
Chen Y
;
Ran GZ
;
Zhang BR
;
Wang SH
;
Qin G
;
Ma ZC
;
Zong WH
;
Ren SF
收藏
  |  
浏览/下载:91/6
  |  
提交时间:2010/08/12
P-SI
PHOTOLUMINESCENCE
Thermal activation and thermal transfer of localized excitons in InAs self-organized quantum dots
期刊论文
OAI收割
superlattices and microstructures, 1998, 卷号: 23, 期号: 2, 页码: 381-387
Xu ZY
;
Lu ZD
;
Yuan ZL
;
Yang XP
;
Zheng BZ
;
Xu JZ
;
Ge WK
;
Wang Y
;
Wang J
;
Chang LL
收藏
  |  
浏览/下载:28/0
  |  
提交时间:2010/08/12
InAs/GaAs
quantum dots
INGAAS/GAAS
RELAXATION
GROWTH
WELLS
PHOTOLUMINESCENCE
Study of double barrier superlattice by synchrotron radiation and double-crystal x-ray diffraction
期刊论文
OAI收割
applied physics letters, 1996, 卷号: 68, 期号: 8, 页码: 1147-1149
Zhuang Y
;
Wang YT
;
Jiang DS
;
Yang XP
;
Jiang XM
;
Wu JY
;
Xiu LS
;
Zheng WL
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2010/11/17
Carrier relaxation and thermal activation of localized excitons in self-organized InAs multilayers grown on GaAs substrates
期刊论文
OAI收割
physical review b, 1996, 卷号: 54, 期号: 16, 页码: 11528-11531
Xu ZY
;
Lu ZD
;
Yang XP
;
Yuan ZL
;
Zheng BZ
;
Xu JZ
;
Ge WK
;
Wang Y
;
Wang J
;
Chang LL
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2010/11/17
QUANTUM-WELLS
DOTS
ISLANDS
PHOTOLUMINESCENCE
SURFACES
MATRIX
ENHANCEMENT EFFECT OF PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITED SIN CAPPING LAYER ON DIELECTRIC CAP QUANTUM-WELL DISORDERING
期刊论文
OAI收割
japanese journal of applied physics part 2-letters, 1995, 卷号: 34, 期号: 4a, 页码: l418-l421
CHOI WJ
;
LEE S
;
ZHANG JM
;
KIM Y
;
KIM SK
;
LEE JI
;
KANG KN
;
CHO K
收藏
  |  
浏览/下载:9/0
  |  
提交时间:2010/11/17
DIELECTRIC CAP QUANTUM WELL DISORDERING
GAAS/ALGAAS MULTIPLE QUANTUM WELL
SILICON NITRIDE
PECVD
VACANCY DIFFUSION
OUT-DIFFUSION
WAVE-GUIDE
LASERS
GAAS
FILMS