机构

• 半导体研究所 [37]

采集方式

• OAI收割 [37]

内容类型

• 期刊论文 [35]
• 会议论文 [2]

发表日期

• 2011 [3]
• 2009 [6]
• 2008 [3]
• 2006 [5]
• 2003 [2]
• 2002 [5]
• 更多

学科主题

• 半导体物理 [37]

筛选

浏览/检索结果: 共37条，第1-10条 帮助 限定条件 学科主题：半导体物理     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 GaAs-based long-wavelength InAs quantum dots on multi-step-graded InGaAs metamorphic buffer grown by molecular beam epitaxy 期刊论文  OAI收割 journal of physics d-applied physics, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 2011, 卷号: 44, 44, 期号: 33, 页码: 335102, 335102 作者:  He JF;  Wang HL;  Shang XJ;  Li MF;  Zhu Y   |  收藏  |  浏览/下载：23/0  |  提交时间：2012/01/06 1.3 MU-M  STRAIN RELIEF  LASERS  SUBSTRATE  PHOTOLUMINESCENCE  DISLOCATIONS  OPERATION  RANGE  1.3 Mu-m  Strain Relief  Lasers  Substrate  Photoluminescence  Dislocations  Operation  Range   Highly Reproducible Nanolithography by Dynamic Plough of an Atomic-Force Microscope Tip and Thermal-Annealing Treatment 期刊论文  OAI收割 ieee transactions on nanotechnology, IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2011, 2011, 卷号: 10, 10, 期号: 1, 页码: 53-58, 53-58 作者:  Lu XF;  Balocco C;  Yang FH;  Song AM;  Lu, XF, Univ Manchester, Sch Elect & Elect Engn, Manchester M13 9PL, Lancs, Englandxiaofeng.lu@manchester.ac.uk   |  收藏  |  浏览/下载：71/7  |  提交时间：2011/07/05 Atomic-force microscope (AFM)  nanolithography  self-switching diodes (SSDs)  2-D electron gas  CONDUCTING POLYMER-FILMS  NANOMETER-SCALE  LITHOGRAPHY  FABRICATION  SURFACES  DEVICES  NANOSTRUCTURES  Atomic-force Microscope (Afm)  Nanolithography  Self-switching Diodes (Ssds)  2-d Electron Gas  Conducting Polymer-films  Nanometer-scale  Lithography  Fabrication  Surfaces  Devices  Nanostructures   Characteristics of undoped and Sb-doped ZnO thin films prepared in different atmospheres by pulsed laser deposition 期刊论文  OAI收割 physica status solidi a-applications and materials science, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2011, 2011, 卷号: 208, 208, 期号: 4, 页码: 843-850, 843-850 作者:  Zhu BL;  Zhu SJ;  Zhao XZ;  Su FH;  Li GH   |  收藏  |  浏览/下载：95/5  |  提交时间：2011/07/05 conductivity  doping  photoluminescence  pulsed laser deposition  ZnO  ZINC-OXIDE  ELECTRICAL-PROPERTIES  OPTICAL-PROPERTIES  OXYGEN-PRESSURE  PHOTOLUMINESCENCE  LUMINESCENCE  VIOLET  GROWTH  FABRICATION  DEPENDENCE  Conductivity  Doping  Photoluminescence  Pulsed Laser Deposition  Zno  Zinc-oxide  Electrical-properties  Optical-properties  Oxygen-pressure  Photoluminescence  Luminescence  Violet  Growth  Fabrication  Dependence   Distribution of dislocations in GaSb and InSb epilayers grown on GaAs (001) vicinal substrates 期刊论文  OAI收割 journal of applied physics, 2009, 卷号: 105, 期号: 9, 页码: art. no. 094903 Li MC; Qiu YX; Liu GJ; Wang YT; Zhang BS; Zhao LC 收藏  |  浏览/下载：31/0  |  提交时间：2010/03/08 X-RAY-DIFFRACTION  MOLECULAR-BEAM-EPITAXY  FILMS  MISFIT   Strain and magnetic anisotropy of as-grown and annealed Fe films on c(4x4) reconstructed GaAs (001) surface 期刊论文  OAI收割 journal of applied physics, 2009, 卷号: 106, 期号: 1, 页码: art. no. 013911 作者:  Chen L 收藏  |  浏览/下载：71/0  |  提交时间：2010/03/08 annealing  gallium arsenide  iron  magnetic anisotropy  magnetic epitaxial layers  magnetisation  molecular beam epitaxial growth  transmission electron microscopy  X-ray diffraction   Anisotropic strain relaxation of thin Fe film on c(4 x 4) reconstructed GaAs (001) surface 期刊论文  OAI收割 physica e-low-dimensional systems & nanostructures, 2009, 卷号: 42, 期号: 2, 页码: 150-153 作者:  Chen L;  Zhang XH 收藏  |  浏览/下载：32/0  |  提交时间：2010/04/04 Fe thin film  Anisotropic strain relaxation  Magnetic anisotropy  X-ray diffraction  UNIAXIAL MAGNETIC-ANISOTROPY  EPITAXIAL-GROWTH  GAAS(001)  DEVICES   Anomalous coarsening of self-assembled InAs quantum dots on vicinal GaAs (100) substrates 期刊论文  OAI收割 journal of physics d-applied physics, 2009, 卷号: 42, 期号: 5, 页码: art. no. 055310 作者:  Ye XL;  Pan JQ;  Liang S 收藏  |  浏览/下载：126/30  |  提交时间：2010/03/08 CHEMICAL-VAPOR-DEPOSITION  MULTIATOMIC STEPS  ISLANDS  GROWTH  FABRICATION  EPITAXY   Effect of Ka-band microwave on the spin dynamics of electrons in a GaAs/Al0.35Ga0.65As heterostructure 期刊论文  OAI收割 applied physics letters, 2009, 卷号: 94, 期号: 19, 页码: art. no. 192107 作者:  Qian X 收藏  |  浏览/下载：79/7  |  提交时间：2010/03/08 aluminium compounds  carrier lifetime  gallium arsenide  high-frequency effects  III-V semiconductors  optical Kerr effect  semiconductor heterojunctions  spin dynamics  two-dimensional electron gas   Role of edge dislocation and Si impurity in linking the blue luminescence and yellow luminescence in n-type GaN films 期刊论文  OAI收割 applied physics letters, 2009, 卷号: 95, 期号: 4, 页码: art. no. 041901 作者:  Yang H;  Wang H;  Wang H;  Wang YT;  Yang H 收藏  |  浏览/下载：64/1  |  提交时间：2010/03/08 edge dislocations  gallium compounds  III-V semiconductors  impurities  photoluminescence  semiconductor doping  semiconductor thin films  silicon  wide band gap semiconductors  X-ray diffraction   Dislocation scattering in AlxGa1-xN/GaN heterostructures 期刊论文  OAI收割 applied physics letters, 2008, 卷号: 93, 期号: 18, 页码: art. no. 182111 Xu, XQ; Liu, XL; Han, XX; Yuan, HR; Wang, J; Guo, Y; Song, HP; Zheng, GL; Wei, HY; Yang, SY; Zhu, QS; Wang, ZG 收藏  |  浏览/下载：61/0  |  提交时间：2010/03/08 aluminium compounds  dislocation density  electron mobility  gallium compounds  III-V semiconductors  interface roughness  semiconductor heterojunctions  two-dimensional electron gas  wide band gap semiconductors