中国科学院机构知识库网格系统: 检索

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	First principles study of the electronic properties of twinned SiC nanowires 期刊论文 OAI收割 journal of nanoparticle research, JOURNAL OF NANOPARTICLE RESEARCH, 2011, 2011, 卷号: 13, 13, 期号: 1, 页码: 185-191, 185-191 作者: Wang ZG; Wang SJ; Zhang CL; Li JB; Wang, ZG, Univ Elect Sci & Technol China. , Dept Appl Phys, Chengdu 610054, Peoples R China. zgwang@uestc.edu.cn \| 收藏 \| 浏览/下载：100/6 \| 提交时间：2011/07/05 Twinned SiC nanowires Electronic properties Ab initio Modeling and simulation SILICON-CARBIDE NANOWIRES FIELD-EMISSION PROPERTIES MOLECULAR-BEAM EPITAXY INAS NANOWIRES GROWTH NANOTUBES NITRIDE DIFFUSION NANORODS ENERGY Twinned Sic Nanowires Electronic Properties Ab Initio Modeling And Simulation Silicon-carbide Nanowires Field-emission Properties Molecular-beam Epitaxy Inas Nanowires Growth Nanotubes Nitride Diffusion Nanorods Energy
	Tensile and compressive mechanical behavior of twinned silicon carbide nanowires 期刊论文 OAI收割 acta materialia, ACTA MATERIALIA, 2010, 2010, 卷号: 58, 58, 期号: 6, 页码: 1963-1971, 1963-1971 作者: Wang ZG; Li JB; Gao F; Weber WJ; Wang, ZG, Univ Elect Sci & Technol China, Dept Appl Phys, Chengdu 610054, Peoples R China. E-mail Address: zgwang@uestc.edu.cn \| 收藏 \| 浏览/下载：62/1 \| 提交时间：2010/04/22 Twinning Twinning Nanotructures Fracture Buckling Molecular Dynamics Chemical-vapor-deposition Ab-initio Calculations Beta-sic Nanowires Low-temperature Thin-films Simulation Elasticity Nanotubes Polytypes Growth Nanotructures Fracture Buckling Molecular dynamics CHEMICAL-VAPOR-DEPOSITION AB-INITIO CALCULATIONS BETA-SIC NANOWIRES LOW-TEMPERATURE THIN-FILMS SIMULATION ELASTICITY NANOTUBES POLYTYPES GROWTH
	Microstructure and Optical Properties of Nonpolar m-Plane GaN Films Grown on m-Plane Sapphire by Hydride Vapor Phase Epitaxy 期刊论文 OAI收割 japanese journal of applied physics, 2008, 卷号: 47, 期号: 5, 页码: 3346-3349 part 1 Wei, TB; Duan, RF; Wang, JX; Li, JM; Huo, ZQ; Yang, JK; Zeng, YP 收藏 \| 浏览/下载：24/0 \| 提交时间：2010/03/08 HVPE GaN sapphire nonpolar semipolar
	Corrugated surfaces formed on GaAs(331)A substrates: the template for laterally ordered InGaAs nanowires 期刊论文 OAI收割 nanotechnology, 2006, 卷号: 17, 期号: 4, 页码: 1140-1145 Gong Z; Niu ZC; Fang ZD 收藏 \| 浏览/下载：72/0 \| 提交时间：2010/04/11 MOLECULAR-BEAM EPITAXY QUANTUM-DOT SUPERLATTICES VICINAL GAAS(001) GAAS WIRES POLARIZATION GROWTH WELLS TEMPERATURE MECHANISM
	Photoluminescence of self-assembled InAs/GaAs quantum dots covered by InAlAs and InGaAs combination strain-reducing layer 期刊论文 OAI收割 chinese physics letters, 2003, 卷号: 20, 期号: 11, 页码: 2061-2063 Fang ZD; Gong Z; Miao ZH; Xu XH; Ni HQ; Niu ZC 收藏 \| 浏览/下载：64/0 \| 提交时间：2010/08/12 1.3 MU-M MOLECULAR-BEAM EPITAXY TEMPERATURE-DEPENDENCE LASING CHARACTERISTICS LASERS WAVELENGTH SEPARATION LINEWIDTH PROPERTY GAIN
	Cubic-phase GaN light-emitting diodes 期刊论文 OAI收割 applied physics letters, 1999, 卷号: 74, 期号: 17, 页码: 2498-2500 作者: Han PD 收藏 \| 浏览/下载：45/0 \| 提交时间：2010/08/12 MOLECULAR-BEAM EPITAXY SEMICONDUCTORS NITRIDE GROWTH
	Transmission electron microscopy study of triple-ribbon contrast features in a ZnTe epitaxial layer 期刊论文 OAI收割 philosophical magazine letters, 1998, 卷号: 78, 期号: 3, 页码: 203-211 作者: Han PD 收藏 \| 浏览/下载：36/0 \| 提交时间：2010/08/12 THREADING DISLOCATION DENSITIES II-VI COMPOUNDS MISFIT DISLOCATIONS SEMICONDUCTORS ORIGIN FILMS
	Dissociated screw dislocation which can relieve strain energy in the epitaxial layer of GeSi on Si(001) 期刊论文 OAI收割 physical review b, 1997, 卷号: 55, 期号: 15, 页码: 9259-9262 Wan XY; Liang JW; Liu ML; Jin XJ 收藏 \| 浏览/下载：18/0 \| 提交时间：2010/11/17 MISFIT DISLOCATIONS INTERFACE