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  • 半导体物理 [185]
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General Green’s function formalism for layered systems:Wave function approach 期刊论文  OAI收割
PHYSICAL REVIEW B, 2017, 卷号: 95, 期号: 7, 页码: 075421
作者:  
Shu-Hui Zhang;  Wen Yang;  Kai Chang
  |  收藏  |  浏览/下载:6/0  |  提交时间:2018/06/01
Quantum efficiency optimization by maximizing wave function overlap in type-II superlattice photodetectors 期刊论文  OAI收割
Nanoscale, 2017, 卷号: 9, 页码: 11833–11840
作者:  
Yunhao Zhao;  Lu Liu;  Renchao Che;  Han Bi;  Xi Han
收藏  |  浏览/下载:22/0  |  提交时间:2018/06/15
The quantification of quantum nonlocality by characteristic function 期刊论文  OAI收割
science china-physics mechanics & astronomy, SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY, 2013, 2013, 卷号: 56, 56, 期号: 6, 页码: 947-951, 947-951
作者:  
Wen Wei
  |  收藏  |  浏览/下载:10/0  |  提交时间:2013/08/27
Hole mediated magnetism in Mn-doped GaN nanowires 期刊论文  OAI收割
journal of applied physics, JOURNAL OF APPLIED PHYSICS, 2011, 2011, 卷号: 109, 109, 期号: 7, 页码: article no.74313, Article no.74313
作者:  
Zhang XW;  Li JB;  Chang K;  Li SS;  Xia JB
  |  收藏  |  浏览/下载:61/4  |  提交时间:2011/07/05
Characteristics of heat generation in a quantum dot 期刊论文  OAI收割
physical review b, PHYSICAL REVIEW B, 2011, 2011, 卷号: 83, 83, 期号: 19, 页码: article no.195303, Article no.195303
作者:  
Zhou LL;  Li SS;  Wei JN
  |  收藏  |  浏览/下载:61/5  |  提交时间:2011/07/05
Positively charged manganese acceptor disclosed by photoluminescence spectra in an n-i-p-i-n heterostructure with a Mn-doped GaAs base 期刊论文  OAI收割
journal of applied physics, JOURNAL OF APPLIED PHYSICS, 2011, 2011, 卷号: 109, 109, 期号: 9, 页码: article no.93507, Article no.93507
作者:  
Shen C;  Wang LG;  Zheng HZ;  Zhu H;  Chen L
  |  收藏  |  浏览/下载:42/5  |  提交时间:2011/07/05
GaAs-based long-wavelength InAs quantum dots on multi-step-graded InGaAs metamorphic buffer grown by molecular beam epitaxy 期刊论文  OAI收割
journal of physics d-applied physics, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 2011, 卷号: 44, 44, 期号: 33, 页码: 335102, 335102
作者:  
He JF;  Wang HL;  Shang XJ;  Li MF;  Zhu Y
  |  收藏  |  浏览/下载:23/0  |  提交时间:2012/01/06
Interface effect on the electronic structure and optical properties of InAs/GaSb superlattices 期刊论文  OAI收割
journal of physics d-applied physics, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 2011, 卷号: 44, 44, 期号: 42, 页码: 425103, 425103
作者:  
Lang, XL;  Xia, JB;  Lang, XL (reprint author), CAS, State Key Lab Superlattices & Microstruct, Inst Semicond, Beijing 100083, Peoples R China,langxiaoli@semi.ac.cn;  xiajb@semi.ac.cn
  |  收藏  |  浏览/下载:69/0  |  提交时间:2012/01/06
Determining the sign of g factor via time-resolved Kerr rotation spectroscopy with a rotatable magnetic field 期刊论文  OAI收割
chinese physics b, CHINESE PHYSICS B, 2011, 2011, 卷号: 20, 20, 期号: 8, 页码: 87503, 87503
作者:  
Gu XF;  Qian X;  Ji Y;  Chen L;  Zhao JH
  |  收藏  |  浏览/下载:17/0  |  提交时间:2012/01/06
Quantum-dot-induced optical transition enhancement in InAs quantum-dot-embedded p-i-n GaAs solar cells 期刊论文  OAI收割
applied physics letters, APPLIED PHYSICS LETTERS, 2011, 2011, 卷号: 99, 99, 期号: 11, 页码: 113514, 113514
作者:  
Shang XJ;  He JF;  Li MF;  Zhan F;  Ni HQ
  |  收藏  |  浏览/下载:17/0  |  提交时间:2012/01/06