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Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
半导体研究所 [185]
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OAI收割 [185]
内容类型
期刊论文 [177]
会议论文 [8]
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2017 [2]
2011 [13]
2010 [6]
2009 [13]
2008 [13]
2007 [14]
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学科主题
半导体物理 [185]
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General Green’s function formalism for layered systems:Wave function approach
期刊论文
OAI收割
PHYSICAL REVIEW B, 2017, 卷号: 95, 期号: 7, 页码: 075421
作者:
Shu-Hui Zhang
;
Wen Yang
;
Kai Chang
  |  
收藏
  |  
浏览/下载:6/0
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提交时间:2018/06/01
Quantum efficiency optimization by maximizing wave function overlap in type-II superlattice photodetectors
期刊论文
OAI收割
Nanoscale, 2017, 卷号: 9, 页码: 11833–11840
作者:
Yunhao Zhao
;
Lu Liu
;
Renchao Che
;
Han Bi
;
Xi Han
收藏
  |  
浏览/下载:22/0
  |  
提交时间:2018/06/15
The quantification of quantum nonlocality by characteristic function
期刊论文
OAI收割
science china-physics mechanics & astronomy, SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY, 2013, 2013, 卷号: 56, 56, 期号: 6, 页码: 947-951, 947-951
作者:
Wen Wei
  |  
收藏
  |  
浏览/下载:10/0
  |  
提交时间:2013/08/27
Hole mediated magnetism in Mn-doped GaN nanowires
期刊论文
OAI收割
journal of applied physics, JOURNAL OF APPLIED PHYSICS, 2011, 2011, 卷号: 109, 109, 期号: 7, 页码: article no.74313, Article no.74313
作者:
Zhang XW
;
Li JB
;
Chang K
;
Li SS
;
Xia JB
  |  
收藏
  |  
浏览/下载:61/4
  |  
提交时间:2011/07/05
MOLECULAR-BEAM EPITAXY
ROOM-TEMPERATURE
QUANTUM WIRES
SEMICONDUCTORS
FERROMAGNETISM
FIELD
GAMNN
Molecular-beam Epitaxy
Room-temperature
Quantum Wires
Semiconductors
Ferromagnetism
Field
Gamnn
Characteristics of heat generation in a quantum dot
期刊论文
OAI收割
physical review b, PHYSICAL REVIEW B, 2011, 2011, 卷号: 83, 83, 期号: 19, 页码: article no.195303, Article no.195303
作者:
Zhou LL
;
Li SS
;
Wei JN
  |  
收藏
  |  
浏览/下载:61/5
  |  
提交时间:2011/07/05
NANOSCALE CONDUCTORS
POWER DISSIPATION
JUNCTIONS
TRANSPORT
Nanoscale Conductors
Power Dissipation
Junctions
Transport
Positively charged manganese acceptor disclosed by photoluminescence spectra in an n-i-p-i-n heterostructure with a Mn-doped GaAs base
期刊论文
OAI收割
journal of applied physics, JOURNAL OF APPLIED PHYSICS, 2011, 2011, 卷号: 109, 109, 期号: 9, 页码: article no.93507, Article no.93507
作者:
Shen C
;
Wang LG
;
Zheng HZ
;
Zhu H
;
Chen L
  |  
收藏
  |  
浏览/下载:42/5
  |  
提交时间:2011/07/05
GALLIUM-ARSENIDE
SEMICONDUCTORS
FIELD
Gallium-arsenide
Semiconductors
Field
GaAs-based long-wavelength InAs quantum dots on multi-step-graded InGaAs metamorphic buffer grown by molecular beam epitaxy
期刊论文
OAI收割
journal of physics d-applied physics, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 2011, 卷号: 44, 44, 期号: 33, 页码: 335102, 335102
作者:
He JF
;
Wang HL
;
Shang XJ
;
Li MF
;
Zhu Y
  |  
收藏
  |  
浏览/下载:23/0
  |  
提交时间:2012/01/06
1.3 MU-M
STRAIN RELIEF
LASERS
SUBSTRATE
PHOTOLUMINESCENCE
DISLOCATIONS
OPERATION
RANGE
1.3 Mu-m
Strain Relief
Lasers
Substrate
Photoluminescence
Dislocations
Operation
Range
Interface effect on the electronic structure and optical properties of InAs/GaSb superlattices
期刊论文
OAI收割
journal of physics d-applied physics, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 2011, 卷号: 44, 44, 期号: 42, 页码: 425103, 425103
作者:
Lang, XL
;
Xia, JB
;
Lang, XL (reprint author), CAS, State Key Lab Superlattices & Microstruct, Inst Semicond, Beijing 100083, Peoples R China,langxiaoli@semi.ac.cn
;
xiajb@semi.ac.cn
  |  
收藏
  |  
浏览/下载:69/0
  |  
提交时间:2012/01/06
GASB SUPER-LATTICE
SEMICONDUCTOR HETEROSTRUCTURES
DEFORMATION POTENTIALS
II SUPERLATTICES
BAND PARAMETERS
DETECTORS
APPROXIMATION
TRANSITIONS
Gasb Super-lattice
Semiconductor Heterostructures
Deformation Potentials
Ii Superlattices
Band Parameters
Detectors
Approximation
Transitions
Determining the sign of g factor via time-resolved Kerr rotation spectroscopy with a rotatable magnetic field
期刊论文
OAI收割
chinese physics b, CHINESE PHYSICS B, 2011, 2011, 卷号: 20, 20, 期号: 8, 页码: 87503, 87503
作者:
Gu XF
;
Qian X
;
Ji Y
;
Chen L
;
Zhao JH
  |  
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2012/01/06
ELECTRON G-FACTORS
QUANTUM-WELLS
GAAS
SPINTRONICS
BEATS
Electron G-factors
Quantum-wells
Gaas
Spintronics
Beats
Quantum-dot-induced optical transition enhancement in InAs quantum-dot-embedded p-i-n GaAs solar cells
期刊论文
OAI收割
applied physics letters, APPLIED PHYSICS LETTERS, 2011, 2011, 卷号: 99, 99, 期号: 11, 页码: 113514, 113514
作者:
Shang XJ
;
He JF
;
Li MF
;
Zhan F
;
Ni HQ
  |  
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2012/01/06
WELL INFRARED PHOTODETECTOR
PHOTOCURRENT
EFFICIENCY
Well Infrared Photodetector
Photocurrent
Efficiency