机构

• 半导体研究所 [10]

采集方式

• OAI收割 [6]
• iSwitch采集 [4]

内容类型

• 期刊论文 [8]
• 会议论文 [2]

发表日期

• 2011 [1]
• 2006 [4]
• 2005 [3]
• 2003 [1]
• 1996 [1]

学科主题

• 光电子学 [2]
• 半导体物理 [2]
• 半导体器件 [1]
• 半导体材料 [1]

筛选

浏览/检索结果: 共10条，第1-10条 帮助 限定条件 专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Microwave-modulated reflectance spectroscopy in the gaas/algaas heterostructure 期刊论文  iSwitch采集 Journal of infrared and millimeter waves, 2011, 卷号: 30, 期号: 6, 页码: 486-+ 作者:  Qian Xuan;  Gu Xiao-Fang;  Ji Yang 收藏  |   Band gap renormalization and carrier localization effects in ingan/gan quantum-wells light emitting diodes with si doped barriers 期刊论文  iSwitch采集 Applied physics letters, 2006, 卷号: 88, 期号: 4, 页码: 3 作者:  Wang, YJ;  Xu, SJ;  Li, Q;  Zhao, DG;  Yang, H 收藏  |   Research on the band-gap of InN grown on siticon substrates 会议论文  OAI收割 32nd international symposium on compound semiconductors, rust, germany, sep 18-22, 2005 Xiao, HL; Wang, XL; Wang, JX; Zhang, NH; Liu, HX; Zeng, YP; Li, JM 收藏  |   Two-dimensional photonic crystals with a large photonic band gap designed by a rapid genetic algorithm 会议论文  OAI收割 ieee international conference of nano/micro engineered and molecular systems, zhuhai, peoples r china, jan 18-21, 2006 Gong, C (Gong, Chuniuan); Ho, XW (Ho, Xiongwei) 收藏  |   Band gap renormalization and carrier localization effects in InGaN/GaN quantum-wells light emitting diodes with Si doped barriers 期刊论文  OAI收割 applied physics letters, 2006, 卷号: 88, 期号: 4, 页码: art.no.041903 作者:  Zhao DG 收藏  |   Photonic band structures of two-dimensional photonic crystals with deformed lattices 期刊论文  iSwitch采集 Chinese physics, 2005, 卷号: 14, 期号: 12, 页码: 2507-2513 作者:  Cai, XH;  Zheng, WH;  Ma, XT;  Ren, G;  Xia, JB 收藏  |   High-temperature electron-hole liquid and dynamics of fermi excitons in a in0.65al0.35as/al0.4ga0.6as quantum dot array 期刊论文  iSwitch采集 Physical review b, 2005, 卷号: 71, 期号: 8, 页码: 6 作者:  Ding, CR;  Wang, HZ;  Xu, B 收藏  |   Photonic band structures of two-dimensional photonic crystals with deformed lattices 期刊论文  OAI收割 chinese physics, 2005, 卷号: 14, 期号: 12, 页码: 2507-2513 Cai XH; Zheng WH; Ma XT; Ren G; Xia JB 收藏  |   Effect of different type intermediate layers on band structure and gain of Ga1-xInxNyAs1-y-GaAs quantum well lasers 期刊论文  OAI收割 ieee photonics technology letters, 2003, 卷号: 15, 期号: 10, 页码: 1336-1338 作者:  Xu YQ 收藏  |   Microscopic analysis of defects in a high resistivity silicon detector irradiated to 1.7x10(15)n/cm(2) 期刊论文  OAI收割 ieee transactions on nuclear science, 1996, 卷号: 43, 期号: 3, 页码: 1590-1598 Li Z; Ghislotti G; Kraner HW; Li CJ; Nielsen B; Feick H; Lindstroem G 收藏  |