机构

• 半导体研究所 [24]

采集方式

• OAI收割 [24]

内容类型

• 期刊论文 [19]
• 会议论文 [5]

发表日期

• 2016 [1]
• 2011 [3]
• 2010 [1]
• 2009 [2]
• 2008 [5]
• 2007 [2]
• 更多

学科主题

• 光电子学 [24]

筛选

浏览/检索结果: 共24条，第1-10条 帮助 限定条件 学科主题：光电子学     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Shockley–Read–Hall recombination and efficiency droop in InGaN/GaN multiple-quantum-well green light-emitting diodes 期刊论文  OAI收割 Journal of Physics D: Applied Physics, 2016, 卷号: 49, 期号: 14, 页码: 145104 Wei Liu; Degang Zhao; Desheng Jiang; Ping Chen; Zongshun Liu; Jianjun Zhu; Xiang Li; Feng Liang; Jianping Liu; Liqun Zhang; Hui Yang; Yuantao Zhang; Guotong Du 收藏  |  浏览/下载：22/0  |  提交时间：2017/03/10 Analysis of Modified Williamson-Hall Plots on GaN Layers 期刊论文  OAI收割 chinese physics letters, 2011, 卷号: 28, 期号: 1, 页码: article no.16101 Liu JQ; Qiu YX; Wang JF; Xu K; Yang H 收藏  |  浏览/下载：36/3  |  提交时间：2011/07/05 X-RAY-DIFFRACTION  THIN-FILMS  GROWTH   Multifunctional silicon-based light emitting device in standard complementary metal-oxide-semiconductor technology 期刊论文  OAI收割 chinese physics b, 2011, 卷号: 20, 期号: 1, 页码: article no.18503 作者:  Dong Z;  Huang BJ 收藏  |  浏览/下载：50/2  |  提交时间：2011/07/05 optoelectronic integrated circuit  complementary metal-oxide-semiconductor technology  silicon-based light emitting device  electroluminescence  AVALANCHE BREAKDOWN  PHOTON-EMISSION  CURRENT-DENSITY  DIODES  MODEL  ELECTROLUMINESCENCE  SUPERLATTICES  EFFICIENCY  JUNCTIONS  LEDS   Molecular beam epitaxy growth of InGaSb/AlGaAsSb strained quantum well diode lasers 期刊论文  OAI收割 journal of semiconductors, Journal of Semiconductors, 2011, 2011, 卷号: 32, 32, 期号: 10, 页码: 103002, 103002 作者:  Zhang, Yu   |  收藏  |  浏览/下载：19/0  |  提交时间：2012/06/14 Buffer layers  Epitaxial growth  Gallium alloys  Indium antimonides  Molecular beam epitaxy  Molecular beams  Optical waveguides  Optimization  Semiconducting gallium arsenide  Semiconductor quantum wells  Tellurium  Tellurium compounds  Buffer Layers  Epitaxial Growth  Gallium Alloys  Indium Antimonides  Molecular Beam Epitaxy  Molecular Beams  Optical Waveguides  Optimization  Semiconducting Gallium Arsenide  Semiconductor Quantum Wells  Tellurium  Tellurium Compounds   Effective recombination velocity of textured surfaces 期刊论文  OAI收割 applied physics letters, 2010, 卷号: 96, 期号: 19, 页码: art. no. 193107 Xiong KL (Xiong Kanglin); Lu SL (Lu Shulong); Jiang DS (Jiang Desheng); Dong JR (Dong Jianrong); Yang H (Yang Hui) 收藏  |  浏览/下载：119/3  |  提交时间：2010/06/04 carrier lifetime  numerical analysis  semiconductor thin films  surface recombination  surface texture   Thickness dependent dislocation, electrical and optical properties in InN films grown by MOCVD 期刊论文  OAI收割 acta physica sinica, 2009, 卷号: 58, 期号: 5, 页码: 3416-3420 作者:  Li Y;  Chen P;  Jiang DS;  Wang H;  Wang ZG 收藏  |  浏览/下载：49/4  |  提交时间：2010/03/08 InN  dislocation  carrier origination  localization   Determination of the tilt and twist angles of curved GaN layers by high-resolution x-ray diffraction 期刊论文  OAI收割 semiconductor science and technology, 2009, 卷号: 24, 期号: 12, 页码: art.no.125007 Liu, JQ (Liu, J. Q.); Wang, JF (Wang, J. F.); Qiu, YX (Qiu, Y. X.); Guo, X (Guo, X.); Huang, K (Huang, K.); Zhang, YM (Zhang, Y. M.); Hu, XJ (Hu, X. J.); Xu, Y (Xu, Y.); Xu, K (Xu, K.); Huang, XH (Huang, X. H.); Yang, H (Yang, H.) 收藏  |  浏览/下载：244/114  |  提交时间：2010/03/08 THIN-FILMS   High-temperature AlN interlayer for crack-free AlGaN growth on GaN 期刊论文  OAI收割 journal of applied physics, 2008, 卷号: 104, 期号: 4, 页码: art. no. 043516 Sun, Q; Wang, JT; Wang, H; Jin, RQ; Jiang, DS; Zhu, JJ; Zhao, DG; Yang, H; Zhou, SQ; Wu, MF; Smeets, D; Vantomme, A 收藏  |  浏览/下载：73/0  |  提交时间：2010/03/08 STRESS  SI(111)  REDUCTION  THICKNESS   Optical and Electrical Properties of GaN.Mg Grown by MOCVD 期刊论文  OAI收割 半导体学报, 2008, 卷号: 29, 期号: 1, 页码: 29-32 作者:  Zhang Shuming 收藏  |  浏览/下载：138/36  |  提交时间：2010/11/23 Investigation on the structural origin of n-type conductivity in InN films 期刊论文  OAI收割 journal of physics d-applied physics, 2008, 卷号: 41, 期号: 13, 页码: art. no. 135403 Wang, H; Jiang, DS; Wang, LL; Sun, X; Liu, WB; Zhao, DG; Zhu, JJ; Liu, ZS; Wang, YT; Zhang, SM; Yang, H 收藏  |  浏览/下载：53/1  |  提交时间：2010/03/08 MOLECULAR-BEAM EPITAXY  GAN FILMS  DISLOCATION SCATTERING  LAYER THICKNESS  INDIUM NITRIDE  BAND-GAP  VACANCIES