机构

• 半导体研究所 [20]

采集方式

• OAI收割 [11]
• iSwitch采集 [9]

内容类型

• 期刊论文 [20]

发表日期

• 2011 [2]
• 2010 [1]
• 2009 [4]
• 2008 [3]
• 2007 [2]
• 2006 [2]
• 更多

学科主题

• 半导体材料 [5]
• 半导体物理 [3]
• 光电子学 [2]
• 半导体器件 [1]

筛选

浏览/检索结果: 共20条，第1-10条 帮助 限定条件 专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Low-threshold continuous-wave operation of distributed-feedback quantum cascade laser at lambda similar to 4.6 mu m 期刊论文  iSwitch采集 Ieee photonics technology letters, 2011, 卷号: 23, 期号: 18, 页码: 1334-1336 作者:  Zhang, Jinchuan;  Wang, Lijun;  Tan, Song;  Liu, Wanfeng;  Zhao, Lihua 收藏  |  浏览/下载：37/0  |  提交时间：2019/05/12 Distributed-feedback (dfb) devices  Quantum cascade lasers (qcls)  Semiconductor lasers   Multifunctional silicon-based light emitting device in standard complementary metal-oxide-semiconductor technology 期刊论文  OAI收割 chinese physics b, 2011, 卷号: 20, 期号: 1, 页码: article no.18503 作者:  Dong Z;  Huang BJ 收藏  |  浏览/下载：49/2  |  提交时间：2011/07/05 optoelectronic integrated circuit  complementary metal-oxide-semiconductor technology  silicon-based light emitting device  electroluminescence  AVALANCHE BREAKDOWN  PHOTON-EMISSION  CURRENT-DENSITY  DIODES  MODEL  ELECTROLUMINESCENCE  SUPERLATTICES  EFFICIENCY  JUNCTIONS  LEDS   Improvement of efficiency droop of GaN-based light-emitting devices by a rear nitride reflector 期刊论文  OAI收割 physica e-low-dimensional systems & nanostructures, 2010, 卷号: 43, 期号: 1, 页码: 289-292 Cai LE; Zhang BP; Zhang JY; Wu CM; Jiang F; Hu XL; Chen M; Wang QM 收藏  |  浏览/下载：43/1  |  提交时间：2011/07/05 DIODES   The field emission properties of nonpolar a-plane n-type gan films grown on nano-patterned sapphire substrates 期刊论文  iSwitch采集 Physica status solidi a-applications and materials science, 2009, 卷号: 206, 期号: 7, 页码: 1501-1503 作者:  Sun, Lili;  Yan, Fawang;  Wang, Junxi;  Zhang, Huixiao;  Zeng, Yiping 收藏  |  浏览/下载：21/0  |  提交时间：2019/05/12 1310 nm gainnas triple quantum well laser with 13 ghz modulation bandwidth 期刊论文  iSwitch采集 Electronics letters, 2009, 卷号: 45, 期号: 7, 页码: 356-u23 作者:  Zhao, H.;  Haglund, A.;  Westburgh, P.;  Wang, S. M.;  Gustavsson, J. S. 收藏  |  浏览/下载：30/0  |  提交时间：2019/05/12 The field emission properties of nonpolar a-plane n-type GaN films grown on nano-patterned sapphire substrates 期刊论文  OAI收割 physica status solidi a-applications and materials science, 2009, 卷号: 206, 期号: 7, 页码: 1501-1503 Sun LL; Yan FW; Wang JX; Zhang HX; Zeng YP; Wang GH; Li JM 收藏  |  浏览/下载：55/1  |  提交时间：2010/03/08 ELECTRON-AFFINITY   1310 nm GaInNAs triple quantum well laser with 13 GHz modulation bandwidth 期刊论文  OAI收割 electronics letters, 2009, 卷号: 45, 期号: 7, 页码: 356-u23 Zhao H; Haglund A; Westburgh P; Wang SM; Gustavsson JS; Sadeghi M; Larsson A 收藏  |  浏览/下载：83/31  |  提交时间：2010/03/08 THRESHOLD-CURRENT-DENSITY  RANGE   High-power quantum-dot superluminescent led with broadband drive current insensitive emission spectra using a tapered active region 期刊论文  iSwitch采集 Ieee photonics technology letters, 2008, 卷号: 20, 期号: 9-12, 页码: 782-784 作者:  Zhang, Z. Y.;  Hogg, R. A.;  Jin, P.;  Choi, T. L.;  Xu, B. 收藏  |  浏览/下载：21/0  |  提交时间：2019/05/12 Molecular beam epitaxy (mbe)  Quantum dots (qds)  Superlumineseent light-emitting diodes (sleds)   Enhancement of field emission properties in La-doped ZnO films prepared by magnetron sputtering 期刊论文  OAI收割 chinese physics letters, 2008, 卷号: 25, 期号: 7, 页码: 2657-2660 Li, J; Wang, RZ; Lan, W; Zhang, XW; Duan, ZQ; Wang, B; Yan, H 收藏  |  浏览/下载：53/2  |  提交时间：2010/03/08 CVD DIAMOND FILMS  WORK FUNCTION  PHOTOCATALYTIC ACTIVITY  AQUEOUS SUSPENSION  THIN-FILMS  DEGRADATION  MICROSCOPY   High-power quantum-dot superluminescent LED with broadband drive current insensitive emission spectra using a tapered active region 期刊论文  OAI收割 ieee photonics technology letters, 2008, 卷号: 20, 期号: 40068, 页码: 782-784 Zhang, ZY; Hogg, RA; Jin, P; Choi, TL; Xu, B; Wang, ZG 收藏  |  浏览/下载：95/1  |  提交时间：2010/03/08 molecular beam epitaxy (MBE)  quantum dots (QDs)  superlumineseent light-emitting diodes (SLEDs)