机构

• 半导体研究所 [8]

采集方式

• OAI收割 [8]

内容类型

• 期刊论文 [6]
• 会议论文 [2]

发表日期

• 2009 [2]
• 2005 [1]
• 2002 [1]
• 2001 [4]

学科主题

• 半导体材料 [8]

筛选

浏览/检索结果: 共8条，第1-8条 帮助 限定条件 学科主题：半导体材料     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 The field emission properties of nonpolar a-plane n-type GaN films grown on nano-patterned sapphire substrates 期刊论文  OAI收割 physica status solidi a-applications and materials science, 2009, 卷号: 206, 期号: 7, 页码: 1501-1503 Sun LL; Yan FW; Wang JX; Zhang HX; Zeng YP; Wang GH; Li JM 收藏  |  浏览/下载：55/1  |  提交时间：2010/03/08 ELECTRON-AFFINITY   Improvement in crystal quality of ZnO film on Si substrate by using a homo-buffer layer 期刊论文  OAI收割 materials science in semiconductor processing, 2009, 卷号: 12, 期号: 6, 页码: 233-237 作者:  Zhao J 收藏  |  浏览/下载：43/4  |  提交时间：2011/07/05 ZnO  Pulsed laser deposition  X-ray diffraction  Photoluminescence  Reflection high-energy electron diffraction  PULSED-LASER DEPOSITION  THIN-FILMS  PLD TECHNIQUE  GROWTH  SAPPHIRE  TEMPERATURE   Phase-separation suppression in GaN-rich side of GaNP alloys grown by metal-organic chemical vapor deposition 期刊论文  OAI收割 applied physics a-materials science & processing, 2005, 卷号: 80, 期号: 1, 页码: 141-144 Chen DJ; Shen B; Bi ZX; Zhang KX; Gu SL; Zhang R; Shi, Y; Zheng YD; Sun XH; Wan SK; Wang ZG 收藏  |  浏览/下载：117/41  |  提交时间：2010/03/09 MOLECULAR-BEAM EPITAXY   Heteroepitaxial growth and annealing of gamma-Al2O3 thin films on silicon 会议论文  OAI收割 symposium on silicon-based heterostructure materials held at the 8th iumrs international conference on electronic materials (iumrs-icem2002), xian, peoples r china, jun 10-14, 2002 Tan LW; Wang J; Wang QY; Yu YH; Lin LY 收藏  |  浏览/下载：19/0  |  提交时间：2010/11/15 EPITAXIAL-GROWTH  AL2O3  SI   Structural evaluation of polycrystalline silicon thin films by hot-wire-assisted PECVD 期刊论文  OAI收割 thin solid films, 2001, 卷号: 395, 期号: 1-2, 页码: 213-216 Feng Y; Zhu M; Liu F; Liu J; Han H; Han Y 收藏  |  浏览/下载：159/11  |  提交时间：2010/08/12 poly-Si  structure  hot-wire  plasma-enhanced chemical vapor deposition (PECVD)  CHEMICAL-VAPOR-DEPOSITION  MICROCRYSTALLINE SILICON  HYDROGEN   Structural evaluation of polycrystalline silicon thin films by hot-wire-assisted PECVD 会议论文  OAI收割 1st international conference on cat-cvd (hot wire cvd) process, kanazawa, japan, nov 14-17, 2000 Feng Y; Zhu M; Liu F; Liu J; Han H; Han Y 收藏  |  浏览/下载：20/0  |  提交时间：2010/11/15 poly-Si  structure  hot-wire  plasma-enhanced chemical vapor deposition (PECVD)  CHEMICAL-VAPOR-DEPOSITION  MICROCRYSTALLINE SILICON  HYDROGEN   Quality improvement of GaInNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy 期刊论文  OAI收割 journal of crystal growth, 2001, 卷号: 227, 期号: 0, 页码: 527-531 Li LH; Pan Z; Zhang W; Lin YW; Wang XY; Wu RH 收藏  |  浏览/下载：81/6  |  提交时间：2010/08/12 characterization  defects  X-ray diffraction  molecular beam epitaxy  nitrides  GAAS   Effect of in situ thermal treatment during growth on crystal quality of GaN epilayer grown on sapphire substrate by MOVPE 期刊论文  OAI收割 journal of crystal growth, 2001, 卷号: 222, 期号: 1-2, 页码: 110-117 Xu HZ; Takahashi K; Wang CX; Wang ZG; Okada Y; Kawabe M; Harrison I; Foxon CT 收藏  |  浏览/下载：54/0  |  提交时间：2010/08/12 gallium nitride  metalorganic vapor-phase epitaxy (MOVPE) annealing  crystal quality  CHEMICAL-VAPOR-DEPOSITION  MOLECULAR-BEAM EPITAXY  BUFFER LAYER  PHASE EPITAXY  DEPENDENCE  DEFECTS