机构

• 半导体研究所 [14]

采集方式

• OAI收割 [14]

内容类型

• 期刊论文 [14]

发表日期

• 2011 [2]
• 2010 [1]
• 2008 [1]
• 2006 [2]
• 2005 [1]
• 2003 [2]
• 更多

学科主题

• 半导体材料 [14]

筛选

浏览/检索结果: 共14条，第1-10条 帮助 限定条件 学科主题：半导体材料     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Determination of InN/Diamond Heterojunction Band Offset by X-ray Photoelectron Spectroscopy 期刊论文  OAI收割 nanoscale research letters, 2011, 卷号: 6, 页码: article no.50 作者:  Wei HY;  Song HP;  Zhang B 收藏  |  浏览/下载：64/2  |  提交时间：2011/07/05 CHEMICAL-VAPOR-DEPOSITION  CORE-LEVEL PHOTOEMISSION  SB-DOPED SNO2  INN  GROWTH  GAN  NAXWO3  ALLOYS  GREEN  STATE   Optimized growth of p-type AlGaN electron blocking layer in the GaN-based LED 期刊论文  OAI收割 acta physica sinica, ACTA PHYSICA SINICA, 2011, 2011, 卷号: 60, 60, 期号: 1, 页码: article no.16108, Article no.16108 作者:  Wang B;  Li ZC;  Yao R;  Liang M;  Yan FW   |  收藏  |  浏览/下载：93/5  |  提交时间：2011/07/05 GaN-based  LED  Al composition  electron blocking layer  TEMPERATURE  ALLOYS  MOVPE  Gan-based  Led  Al Composition  Electron Blocking Layer  Temperature  Alloys  Movpe   Intrinsically limited critical temperatures of highly doped Ga1-xMnxAs thin films 期刊论文  OAI收割 physical review b, PHYSICAL REVIEW B, 2010, 2010, 卷号: 81, 81, 期号: 23, 页码: art. no. 235201, Art. No. 235201 作者:  Khazen K (Khazen Kh.);  von Bardeleben HJ (von Bardeleben H. J.);  Cantin JL (Cantin J. L.);  Mauger A (Mauger A.);  Chen L (Chen L.)   |  收藏  |  浏览/下载：18/0  |  提交时间：2010/06/18 AMORPHOUS FERROMAGNET  Amorphous Ferromagnet  Curie-temperature  Critical-behavior  Renormalization Group  Dipolar Interactions  Critical Exponents  Magnetic Equation  Alloys  State  Semiconductors  CURIE-TEMPERATURE  CRITICAL-BEHAVIOR  RENORMALIZATION GROUP  DIPOLAR INTERACTIONS  CRITICAL EXPONENTS  MAGNETIC EQUATION  ALLOYS  STATE  SEMICONDUCTORS   Temperature dependence of effective g factor in diluted magnetic semiconductor (Ga,Mn)As 期刊论文  OAI收割 journal of applied physics, 2008, 卷号: 103, 期号: 5, 页码: art. no. 053901 Zhou, R; Sun, BQ; Ruan, XZ; Luo, HH; Ji, Y; Wang, WZ; Zhang, F; Zhao, JH 收藏  |  浏览/下载：51/2  |  提交时间：2010/03/08 GAAS  HETEROSTRUCTURES  ALLOYS   High quality microcrystalline Si films by hydrogen dilution profile 期刊论文  OAI收割 thin solid films, 2006, 卷号: 515, 期号: 2, 页码: 452-455 Gu JH (Gu Jinhua); Zhu MF (Zhu Meifang); Wang LJ (Wang Liujiu); Liu FZ (Liu Fengzhen); Zhou BQ (Zhou Bingqing); Ding K (Ding Kun); Li GH (Li Guohua) 收藏  |  浏览/下载：38/0  |  提交时间：2010/04/11 microcrystalline Si thin film  hydrogen dilution profiling  incubation layer  uniformity  CHEMICAL-VAPOR-DEPOSITION  THIN  ALLOYS  CVD   Study on surface morphology of GaN growth by MOCVD on GaN/Si(111) template 期刊论文  OAI收割 journal of rare earths, 2006, 卷号: 24, 期号: sp.iss.si, 页码: 40495 Liu Z; Wang JX; Wang XL; Hu GX; Guo LC; Liu HX; Li JP; Li JM; Zeng YP 收藏  |  浏览/下载：44/0  |  提交时间：2010/04/11 surface morphology  GaN/Si template  GaN  MOCVD  ALLOYS  MOVPE   Magnetron sputtering growth of InAs0.3Sb0.7 films on (100) GaAs substrates: Strong effect of growth conditions on film structure 期刊论文  OAI收割 journal of crystal growth, 2005, 卷号: 285, 期号: 4, 页码: 459-465 作者:  Yin ZG 收藏  |  浏览/下载：304/5  |  提交时间：2010/04/11 crystal structure  magnetron sputtering  semiconducting III-V materials  MOLECULAR-BEAM EPITAXY  CHEMICAL-VAPOR-DEPOSITION  INAS1-XSBX  ALLOYS  INASSB  INSB   Magnetic properties of silicon doped with gadolinium 期刊论文  OAI收割 applied physics a-materials science & processing, 2003, 卷号: 77, 期号: 3-4, 页码: 599-602 Zhou JP; Chen NF; Song SL; Chai CL; Yang SY; Liu ZK; Lin LY 收藏  |  浏览/下载：321/10  |  提交时间：2010/08/12 METAL-INSULATOR-TRANSITION  BEAM EPITAXY TECHNIQUE  SEMICONDUCTING SILICIDES  INDUCED FERROMAGNETISM  FILMS  MAGNETORESISTANCE  TEMPERATURE  ALLOYS   Structural and photoluminescent properties of ternary Zn1-xCdxO crystal films grown on Si(111) substrates 期刊论文  OAI收割 journal of crystal growth, 2003, 卷号: 256, 期号: 1-2, 页码: 78-82 Ye ZZ; Ma DW; He JH; Huang JY; Zhao BH; Luo XD; Xu ZY 收藏  |  浏览/下载：487/1  |  提交时间：2010/08/12 characterization  crystal structure  DC sputtering  alloys  zinc compounds  semiconducting II-VI materials  THIN-FILMS  ROOM-TEMPERATURE  ULTRAVIOLET-LASER  SPRAY-PYROLYSIS  ZNO  MGXZN1-XO  EMISSION  ALLOY   Resonant Raman scattering of a-SiNx : H 期刊论文  OAI收割 materials letters, 2001, 卷号: 47, 期号: 1-2, 页码: 50-54 Wang Y; Yue RF; Han HX; Liao XB; Wang YQ; Diao HW; Kong GL 收藏  |  浏览/下载：64/0  |  提交时间：2010/08/12 a-Sin(x): H films  resonant Raman scattering  quantum confinement model  POLYCRYSTALLINE DIAMOND FILMS  AMORPHOUS-SILICON  HYDROGENATED MICROCRYSTALLINE  SPECTROSCOPY  ALLOYS