中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
首页
机构
成果
学者
登录
注册
登陆
×
验证码:
换一张
忘记密码?
记住我
×
校外用户登录
CAS IR Grid
机构
新疆理化技术研究所 [60]
采集方式
OAI收割 [60]
内容类型
期刊论文 [60]
发表日期
2021 [2]
2020 [5]
2019 [2]
2018 [5]
2017 [3]
2016 [4]
更多
学科主题
Physics [8]
Engineerin... [4]
Research &... [2]
Science & ... [2]
Chemistry [1]
Materials ... [1]
更多
筛选
浏览/检索结果:
共60条,第1-10条
帮助
限定条件
专题:新疆理化技术研究所
第一署名单位
第一作者单位
通讯作者单位
条数/页:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
排序方式:
请选择
提交时间升序
提交时间降序
发表日期升序
发表日期降序
题名升序
题名降序
作者升序
作者降序
Analysis of Dark Signal Degradation Caused by 1 MeV Neutron Irradiation on Backside-Illuminated CMOS Image Sensors
期刊论文
OAI收割
CHINESE JOURNAL OF ELECTRONICS, 2021, 卷号: 30, 期号: 1, 页码: 180-184
作者:
Liu, BK (Liu Bingkai)[ 1,2,3 ]
;
Li, YD (Li Yudong)[ 1,2 ]
;
Wen, L (Wen Lin)[ 1,2 ]
;
Zhou, D (Zhou Dong)[ 1,2 ]
;
Feng, J (Feng Jie)[ 1,2 ]
  |  
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2021/05/10
Backside‐
illuminated CMOS image sensors
Dark signal behaviors
Displacement damage effects
Neutron irradiation
Mechanism of Ionization Damage in Large Eight-Transistor Complementary Metal-Oxide-Semiconductor Color Image Sensors
期刊论文
OAI收割
JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2021, 卷号: 16, 期号: 11, 页码: 1755-1761
作者:
Feng, J (Feng, Jie) [1] , [2]
;
Fu, J (Fu, Jing) [1] , [2] , [3]
;
Li, YD (Li, Yu-Dong) [1] , [2]
;
Wen, L (Wen, Lin) [1] , [2]
  |  
收藏
  |  
浏览/下载:9/0
  |  
提交时间:2022/03/24
CMOS Color Image Sensor
Ionization Damage
Radiation-Sensitive Parameters
Displacement damage effects induced by fast neutron in backside-illuminated CMOS image sensors
期刊论文
OAI收割
JOURNAL OF NUCLEAR SCIENCE AND TECHNOLOGY, 2020, 卷号: 57, 期号: 9, 页码: 1015-1021
作者:
Zhang, X (Zhang, Xiang)[ 1,2,3 ]
;
Li, YD (Li, Yudong)[ 1,2 ]
;
Wen, L (Wen, Lin)[ 1,2 ]
;
Feng, J (Feng, Jie)[ 1,2 ]
;
Zhou, D (Zhou, Dong)[ 1,2 ]
  |  
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2020/12/09
14-MeV neutron
neutron irradiation
radiation damage
radiation effect
Optoelectronic Performance Analysis of Low-Energy Proton Irradiation and Post-Thermal Annealing Effects on InGaAs Solar Cell
期刊论文
OAI收割
FRONTIERS IN PHYSICS, 2020, 卷号: 8, 期号: 11, 页码: 1-7
作者:
Zhuang, Y (Zhuang, Y.)[ 1 ]
;
Aierken, A (Aierken, A.)[ 1 ]
;
Lei, QQ (Lei, Q. Q.)[ 2,3 ]
;
Fang, L (Fang, L.)[ 4 ]
;
Shen, XB (Shen, X. B.)[ 2,3 ]
  |  
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2021/01/05
InGaAs solar cell
proton irradiation
displacement damage
degradation
annealing
Degradation characteristics of electron and proton irradiated InGaAsP/InGaAs dual junction solar cell
期刊论文
OAI收割
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2020, 卷号: 206, 期号: 3, 页码: 1-7
作者:
Zhao, XF (Zhao, X. F.)[ 1 ]
;
Aierken, A (Aierken, A.)[ 1,2 ]
  |  
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2020/04/21
InGaAsP/InGaAs solar cell
Electron and proton irradiation
Degradation
Equivalent displacement damage dose model
A study of hot pixels induced by proton and neutron irradiations in charge coupled devices
期刊论文
OAI收割
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2020, 卷号: 175, 期号: 5-6, 页码: 540-550
作者:
Liu, BK (Liu, Bingkai)[ 1,2,3 ]
;
Li, YD (Li, Yudong)[ 1,2 ]
;
Wen, L (Wen, Lin)[ 1,2 ]
;
Zhou, D (Zhou, Dong)[ 1,2 ]
;
Feng, J (Feng, Jie)[ 1,2 ]
  |  
收藏
  |  
浏览/下载:25/0
  |  
提交时间:2020/07/06
Charge coupled devices (CCDs)
proton irradiation
neutron irradiation
hot pixels
displacement damage effects
The influence of channel width on total ionizing dose responses of the 130 nm H-gate partially depleted SOI NMOSFETs
期刊论文
OAI收割
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2020, 卷号: 175, 期号: 5-6, 页码: 551-558
作者:
Xi, SX (Xi, Shan-Xue)[ 1,2,3 ]
;
Zheng, QW (Zheng, Qi-Wen)[ 1,2 ]
;
Lu, W (Lu, Wu)[ 1,2 ]
;
Cui, JW (Cui, Jiang-Wei)[ 1,2 ]
;
Wei, Y (Wei, Ying)[ 1,2 ]
  |  
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2020/07/06
Total ionizing dose
h-shape gate
channel width
partially depleted
Spectral and electrical properties of 3 MeV and 10 MeV proton irradiated InGaAsP single junction solar cell
期刊论文
OAI收割
JAPANESE JOURNAL OF APPLIED PHYSICS, 2019, 卷号: 58, 期号: 3, 页码: 1-6
作者:
Xu, Y (Xu, Yan)[ 1,2 ]
;
Heini, M (Heini, Maliya)[ 2 ]
;
Shen, XB (Shen, Xiaobao)[ 2,3 ]
;
Aierken, A (Aierken, Abuduwayiti)[ 2,4 ]
;
Zhao, XF (Zhao, Xiaofan)[ 2 ]
  |  
收藏
  |  
浏览/下载:134/0
  |  
提交时间:2019/03/19
Electron irradiation-induced defects and photoelectric properties of Te-doped GaSb
期刊论文
OAI收割
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2019, 卷号: 132, 期号: 9, 页码: 26-30
作者:
Wang, DK (Wang, Dengkui)[ 1 ]
;
Chen, BK (Chen, Bingkun)[ 1 ]
;
Wei, ZP (Wei, Zhipeng)[ 1 ]
;
Fang, X (Fang, Xuan)[ 1 ]
;
Tang, JL (Tang, Jilong)[ 1 ]
  |  
收藏
  |  
浏览/下载:54/0
  |  
提交时间:2019/07/23
GaSb
Electron irradiation
Photoluminescence
Defects
Synergistic effect of total ionizing dose on single event effect induced by pulsed laser microbeam on SiGe heterojunction bipolar transistor
期刊论文
OAI收割
CHINESE PHYSICS B, 2018, 卷号: 27, 期号: 10, 页码: 1-10
作者:
Zhang, JX (Zhang, Jin-Xin)[ 1 ]
;
Guo, HX (Guo, Hong-Xia)[ 2,3 ]
;
Pan, XY (Pan, Xiao-Yu)[ 3 ]
;
Guo, Q (Guo, Qi)[ 2 ]
;
Zhang, FQ (Zhang, Feng-Qi)[ 3 ]
  |  
收藏
  |  
浏览/下载:36/0
  |  
提交时间:2018/11/20
Sige Hbt
Synergistic Effect
Single Event Effects
Total Ionizing Dose