中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
首页
机构
成果
学者
登录
注册
登陆
×
验证码:
换一张
忘记密码?
记住我
×
校外用户登录
CAS IR Grid
机构
半导体研究所 [149]
采集方式
OAI收割 [149]
内容类型
期刊论文 [129]
会议论文 [20]
发表日期
2017 [1]
2016 [3]
2011 [4]
2010 [1]
2009 [14]
2008 [10]
更多
学科主题
半导体物理 [149]
光电子学 [1]
半导体器件 [1]
半导体材料 [1]
筛选
浏览/检索结果:
共149条,第1-10条
帮助
限定条件
学科主题:半导体物理
条数/页:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
排序方式:
请选择
提交时间升序
提交时间降序
发表日期升序
发表日期降序
题名升序
题名降序
作者升序
作者降序
Wavelength Tunable Plasmonic Lasers Based on Intrinsic Self-Absorption of Gain Material
期刊论文
OAI收割
ACS Photonics, 2017, 卷号: 4, 页码: 2789-2796
作者:
Qing Zhang
;
Qiuyu Shang
;
Jia Shi
;
Jie Chen
;
Rui Wang
收藏
  |  
浏览/下载:46/0
  |  
提交时间:2018/07/02
GaN-based violet lasers grown on sapphire with a novel facet fabrication method
会议论文
OAI收割
solid state lighting (sslchina), 2015 12th china international forum, 中国深圳, 2015
Yingdong Tian
;
Yun Zhang
;
Jianchang Yan
;
Xiang Chen
;
Yanan Guo
;
Xuecheng Wei
;
Junxi Wang
;
Jinmin Li
收藏
  |  
浏览/下载:51/0
  |  
提交时间:2016/06/02
Low lateral divergence 2 μm InGaSb/ AlGaAsSb broad-area quantum well lasers
期刊论文
OAI收割
Optics Express, 2016, 卷号: 24, 期号: 7, 页码: 7246-7252
Jiamin Rong
;
Enbo Xing
;
Yu Zhang
;
Lijie Wang
;
Shili Shu
;
Sicong Tian
;
Cunzhu Tong
;
Xiaoli Chai
;
Yingqiang Xu
;
Haiqiao Ni
;
Zhichuan Niu
;
Lijun Wang
收藏
  |  
浏览/下载:27/0
  |  
提交时间:2017/03/10
Design and Analysis of 2-µm InGaSb/GaSb Quantum Well Lasers Integrated onto Silicon-on-Insulator (SOI) Waveguide Circuits through an Al2O3 Bonding Layer
期刊论文
OAI收割
ieee journal of selected topics in quantum electronics, 2016, 卷号: 22, 期号: 6
Xiang Li
;
Hong Wang
;
Zhongliang Qiao
;
Yu Zhang
;
Zhichuan Niu
;
Cunzhu Tong
;
Chongyang Liu
收藏
  |  
浏览/下载:21/0
  |  
提交时间:2017/03/16
Hole mediated magnetism in Mn-doped GaN nanowires
期刊论文
OAI收割
journal of applied physics, JOURNAL OF APPLIED PHYSICS, 2011, 2011, 卷号: 109, 109, 期号: 7, 页码: article no.74313, Article no.74313
作者:
Zhang XW
;
Li JB
;
Chang K
;
Li SS
;
Xia JB
  |  
收藏
  |  
浏览/下载:61/4
  |  
提交时间:2011/07/05
MOLECULAR-BEAM EPITAXY
ROOM-TEMPERATURE
QUANTUM WIRES
SEMICONDUCTORS
FERROMAGNETISM
FIELD
GAMNN
Molecular-beam Epitaxy
Room-temperature
Quantum Wires
Semiconductors
Ferromagnetism
Field
Gamnn
GaAs-based long-wavelength InAs quantum dots on multi-step-graded InGaAs metamorphic buffer grown by molecular beam epitaxy
期刊论文
OAI收割
journal of physics d-applied physics, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 2011, 卷号: 44, 44, 期号: 33, 页码: 335102, 335102
作者:
He JF
;
Wang HL
;
Shang XJ
;
Li MF
;
Zhu Y
  |  
收藏
  |  
浏览/下载:23/0
  |  
提交时间:2012/01/06
1.3 MU-M
STRAIN RELIEF
LASERS
SUBSTRATE
PHOTOLUMINESCENCE
DISLOCATIONS
OPERATION
RANGE
1.3 Mu-m
Strain Relief
Lasers
Substrate
Photoluminescence
Dislocations
Operation
Range
Preparation and photoluminescence study of patterned substrate quantum wires
期刊论文
OAI收割
acta physica sinica, ACTA PHYSICA SINICA, 2011, 2011, 卷号: 60, 60, 期号: 2, 页码: article no.20703, Article no.20703
作者:
Wang XP
;
Yang XH
;
Han Q
;
Ju YL
;
Du Y
  |  
收藏
  |  
浏览/下载:57/7
  |  
提交时间:2011/07/05
V-groove substrate
quantum wires
GaAs
EPITAXIAL-GROWTH
TRANSISTOR
V-groove Substrate
Quantum Wires
Gaas
Epitaxial-growth
Transistor
Photoluminescence of CdSe nanowires grown with and without metal catalyst
期刊论文
OAI收割
nano research, NANO RESEARCH, 2011, 2011, 卷号: 4, 4, 期号: 4, 页码: 343-359, 343-359
作者:
Fasoli A
;
Colli A
;
Martelli F
;
Pisana S
;
Tan PH
  |  
收藏
  |  
浏览/下载:52/5
  |  
提交时间:2011/07/05
CdSe
nanowires
photoluminescence
CHEMICAL-VAPOR-DEPOSITION
SHAPE-SELECTIVE SYNTHESIS
LIQUID-SOLID MECHANISM
OPTICAL-PROPERTIES
SILICON NANOWIRES
SI NANOWIRES
ZNSE NANOWIRES
SEMICONDUCTOR NANOCRYSTALS
STRUCTURAL-PROPERTIES
EPITAXIAL-GROWTH
Cdse
Nanowires
Photoluminescence
Chemical-vapor-deposition
Shape-selective Synthesis
Liquid-solid Mechanism
Optical-properties
Silicon Nanowires
Si Nanowires
Znse Nanowires
Semiconductor Nanocrystals
Structural-properties
Epitaxial-growth
Quantum Confinement Effects and Electronic Properties of SnO2 Quantum Wires and Dots
期刊论文
OAI收割
journal of physical chemistry c, JOURNAL OF PHYSICAL CHEMISTRY C, 2010, 2010, 卷号: 114, 114, 期号: 11, 页码: 4841-4845, 4841-4845
作者:
Deng HX (Deng Hui-Xiong)
;
Li SS (Li Shu-Shen)
;
Li JB (Li Jingbo)
;
Li, JB, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. E-mail Address: jbli@semi.ac.cn
  |  
收藏
  |  
浏览/下载:79/17
  |  
提交时间:2010/04/13
1ST-PRINCIPLES CALCULATIONS
1st-principles Calculations
Molecular-dynamics
Indium-phosphide
Exciton-states
Small Pbse
Nanocrystals
Photoluminescence
Generation
Nanowires
MOLECULAR-DYNAMICS
INDIUM-PHOSPHIDE
EXCITON-STATES
SMALL PBSE
NANOCRYSTALS
PHOTOLUMINESCENCE
GENERATION
NANOWIRES
GaAs-Based Metamorphic Long-Wavelength InAs Quantum Dots Grown by Molecular Beam Epitaxy
期刊论文
OAI收割
chinese physics letters, 2009, 卷号: 26, 期号: 6, 页码: art. no. 067801
作者:
Xu YQ
收藏
  |  
浏览/下载:24/0
  |  
提交时间:2010/03/08
MU-M
LASER
ISLANDS