机构

• 半导体研究所 [149]

采集方式

• OAI收割 [149]

内容类型

• 期刊论文 [129]
• 会议论文 [20]

发表日期

• 2017 [1]
• 2016 [3]
• 2011 [4]
• 2010 [1]
• 2009 [14]
• 2008 [10]
• 更多

学科主题

• 半导体物理 [149]
• 光电子学 [1]
• 半导体器件 [1]
• 半导体材料 [1]

筛选

浏览/检索结果: 共149条，第1-10条 帮助 限定条件 学科主题：半导体物理     条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Wavelength Tunable Plasmonic Lasers Based on Intrinsic Self-Absorption of Gain Material 期刊论文  OAI收割 ACS Photonics, 2017, 卷号: 4, 页码: 2789-2796 作者:  Qing Zhang;  Qiuyu Shang;  Jia Shi;  Jie Chen;  Rui Wang 收藏  |  浏览/下载：46/0  |  提交时间：2018/07/02 GaN-based violet lasers grown on sapphire with a novel facet fabrication method 会议论文  OAI收割 solid state lighting (sslchina), 2015 12th china international forum, 中国深圳, 2015 Yingdong Tian; Yun Zhang; Jianchang Yan; Xiang Chen; Yanan Guo; Xuecheng Wei; Junxi Wang; Jinmin Li 收藏  |  浏览/下载：51/0  |  提交时间：2016/06/02 Low lateral divergence 2 μm InGaSb/ AlGaAsSb broad-area quantum well lasers 期刊论文  OAI收割 Optics Express, 2016, 卷号: 24, 期号: 7, 页码: 7246-7252 Jiamin Rong; Enbo Xing; Yu Zhang; Lijie Wang; Shili Shu; Sicong Tian; Cunzhu Tong; Xiaoli Chai; Yingqiang Xu; Haiqiao Ni; Zhichuan Niu; Lijun Wang 收藏  |  浏览/下载：27/0  |  提交时间：2017/03/10 Design and Analysis of 2-µm InGaSb/GaSb Quantum Well Lasers Integrated onto Silicon-on-Insulator (SOI) Waveguide Circuits through an Al2O3 Bonding Layer 期刊论文  OAI收割 ieee journal of selected topics in quantum electronics, 2016, 卷号: 22, 期号: 6 Xiang Li; Hong Wang; Zhongliang Qiao; Yu Zhang; Zhichuan Niu; Cunzhu Tong; Chongyang Liu 收藏  |  浏览/下载：21/0  |  提交时间：2017/03/16 Hole mediated magnetism in Mn-doped GaN nanowires 期刊论文  OAI收割 journal of applied physics, JOURNAL OF APPLIED PHYSICS, 2011, 2011, 卷号: 109, 109, 期号: 7, 页码: article no.74313, Article no.74313 作者:  Zhang XW;  Li JB;  Chang K;  Li SS;  Xia JB   |  收藏  |  浏览/下载：61/4  |  提交时间：2011/07/05 MOLECULAR-BEAM EPITAXY  ROOM-TEMPERATURE  QUANTUM WIRES  SEMICONDUCTORS  FERROMAGNETISM  FIELD  GAMNN  Molecular-beam Epitaxy  Room-temperature  Quantum Wires  Semiconductors  Ferromagnetism  Field  Gamnn   GaAs-based long-wavelength InAs quantum dots on multi-step-graded InGaAs metamorphic buffer grown by molecular beam epitaxy 期刊论文  OAI收割 journal of physics d-applied physics, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 2011, 卷号: 44, 44, 期号: 33, 页码: 335102, 335102 作者:  He JF;  Wang HL;  Shang XJ;  Li MF;  Zhu Y   |  收藏  |  浏览/下载：23/0  |  提交时间：2012/01/06 1.3 MU-M  STRAIN RELIEF  LASERS  SUBSTRATE  PHOTOLUMINESCENCE  DISLOCATIONS  OPERATION  RANGE  1.3 Mu-m  Strain Relief  Lasers  Substrate  Photoluminescence  Dislocations  Operation  Range   Preparation and photoluminescence study of patterned substrate quantum wires 期刊论文  OAI收割 acta physica sinica, ACTA PHYSICA SINICA, 2011, 2011, 卷号: 60, 60, 期号: 2, 页码: article no.20703, Article no.20703 作者:  Wang XP;  Yang XH;  Han Q;  Ju YL;  Du Y   |  收藏  |  浏览/下载：57/7  |  提交时间：2011/07/05 V-groove substrate  quantum wires  GaAs  EPITAXIAL-GROWTH  TRANSISTOR  V-groove Substrate  Quantum Wires  Gaas  Epitaxial-growth  Transistor   Photoluminescence of CdSe nanowires grown with and without metal catalyst 期刊论文  OAI收割 nano research, NANO RESEARCH, 2011, 2011, 卷号: 4, 4, 期号: 4, 页码: 343-359, 343-359 作者:  Fasoli A;  Colli A;  Martelli F;  Pisana S;  Tan PH   |  收藏  |  浏览/下载：52/5  |  提交时间：2011/07/05 CdSe  nanowires  photoluminescence  CHEMICAL-VAPOR-DEPOSITION  SHAPE-SELECTIVE SYNTHESIS  LIQUID-SOLID MECHANISM  OPTICAL-PROPERTIES  SILICON NANOWIRES  SI NANOWIRES  ZNSE NANOWIRES  SEMICONDUCTOR NANOCRYSTALS  STRUCTURAL-PROPERTIES  EPITAXIAL-GROWTH  Cdse  Nanowires  Photoluminescence  Chemical-vapor-deposition  Shape-selective Synthesis  Liquid-solid Mechanism  Optical-properties  Silicon Nanowires  Si Nanowires  Znse Nanowires  Semiconductor Nanocrystals  Structural-properties  Epitaxial-growth   Quantum Confinement Effects and Electronic Properties of SnO2 Quantum Wires and Dots 期刊论文  OAI收割 journal of physical chemistry c, JOURNAL OF PHYSICAL CHEMISTRY C, 2010, 2010, 卷号: 114, 114, 期号: 11, 页码: 4841-4845, 4841-4845 作者:  Deng HX (Deng Hui-Xiong);  Li SS (Li Shu-Shen);  Li JB (Li Jingbo);  Li, JB, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. E-mail Address: jbli@semi.ac.cn   |  收藏  |  浏览/下载：79/17  |  提交时间：2010/04/13 1ST-PRINCIPLES CALCULATIONS  1st-principles Calculations  Molecular-dynamics  Indium-phosphide  Exciton-states  Small Pbse  Nanocrystals  Photoluminescence  Generation  Nanowires  MOLECULAR-DYNAMICS  INDIUM-PHOSPHIDE  EXCITON-STATES  SMALL PBSE  NANOCRYSTALS  PHOTOLUMINESCENCE  GENERATION  NANOWIRES   GaAs-Based Metamorphic Long-Wavelength InAs Quantum Dots Grown by Molecular Beam Epitaxy 期刊论文  OAI收割 chinese physics letters, 2009, 卷号: 26, 期号: 6, 页码: art. no. 067801 作者:  Xu YQ 收藏  |  浏览/下载：24/0  |  提交时间：2010/03/08 MU-M  LASER  ISLANDS