中国科学院机构知识库网格系统: 检索

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	The influence of internal electric fields on the transition energy of InGaN/gaN quantum well 期刊论文 OAI收割 journal of crystal growth, 2007, 卷号: 298 sp.iss.si, 期号: 0, 页码: 522-526 Guo LC (Guo Lunchun); Wang XL (Wang Xiaoliang); Xiao HL (Xiao Hongling); Wang BZ (Wang Baozhu) 收藏 \| 浏览/下载：64/0 \| 提交时间：2010/03/29 computer simulation
	Electronic structures of wurtzite ZnO and ZnO/MgZnO quantum well 期刊论文 OAI收割 journal of crystal growth, 2006, 卷号: 287, 期号: 1, 页码: 28-33 Fan WJ; Abiyasa AP; Tan ST; Yu SF; Sun XW; Xia JB; Yeo YC; Li MF; Chong TC 收藏 \| 浏览/下载：98/0 \| 提交时间：2010/04/11 computer simulation low dimensional structures zinc compounds semiconducting II-VI materials OPTICAL GAIN SPECTRA BAND-STRUCTURES ROOM-TEMPERATURE LASERS
	Effects and numerical analysis of argon gas flow on the oxygen concentration in Czochralski silicon single crystal growth 会议论文 OAI收割 iumrs/icem 2002 conference, xian, peoples r china, jun 10-14, 2002 Zhang ZC; Ren BY; Chen YH; Yang SY; Wang ZG 收藏 \| 浏览/下载：25/0 \| 提交时间：2010/11/15 Czochralski method growth from melt semiconductor silicon argon gas flow computer simulation oxygen content FURNACE PRESSURE
	A geometrical model of GaN morphology in initial growth stage 期刊论文 OAI收割 journal of crystal growth, 2002, 卷号: 234, 期号: 1, 页码: 115-120 作者: Han PD 收藏 \| 浏览/下载：77/8 \| 提交时间：2010/08/12 computer simulation crystal morphology atomic force microscopy nitrides AIN BUFFER LAYER SAPPHIRE
	Quasi-thermo dynamic analysis of MOVPE growth of GaxAlyIn1-x-yN 期刊论文 OAI收割 journal of crystal growth, 2002, 卷号: 234, 期号: 1, 页码: 145-152 Lu DC; Duan SK 收藏 \| 浏览/下载：99/7 \| 提交时间：2010/08/12 computer simulation molecular vapor phase epitaxy nitrides semiconducting quaternary alloys CHEMICAL-VAPOR-DEPOSITION QUATERNARY ALLOYS PHASE EPITAXY GAN ALINGAN